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CHARACTERIZATION OF THE ALUMINUM-TANTALUM OXIDE-SILICON DIOXIDE-SILICON CHARGE STORAGE (MTOS) DEVICE.ANGLE RL; TALLEY HE.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 466-468; BIBL. 4 REF.Conference Paper

ELECTRICAL AND CHARGE STORAGE CHARACTERISTICS OF THE TANALUM OXIDE-SILICON DIOXIDE DEVICEANGLE RL; TALLEY HE.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 11; PP. 1277-1283; BIBL. 18 REF.Article

Charge-packet-initiated switching of metal-tunnel-oxide-silicon (MTOS) junctionsFOSSUM, E. R; BARKER, R. C.IEEE electron device letters. 1984, Vol 5, Num 4, pp 112-114, issn 0741-3106Article

Clockwise C-V hysteresis phenomena of metal-tantalum-oxide-silicon-oxide-silicon (p) capacitors due to leakage current through tantalum oxideJENN-GWO HWU; MING-JER JENG; WAY-SEEN WANG et al.Journal of applied physics. 1987, Vol 62, Num 10, pp 4277-4283, issn 0021-8979Article

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