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DETERMINATION OF THE CAPTURE RATE CN OF THE GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES.KASSING R; LENZ H.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 131-139; ABS. ALLEM.; BIBL. 25 REF.Article
CURRENT OSCILLATIONS IN HIGH-RESISTIVITY SILICON WITH DEEP LEVELSKAHLER E; KASSING R.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 2; PP. 613-621; ABS. ALLEM.; BIBL. 14 REF.Serial Issue
CARRIER DISTRIBUTION AND LOW-FIELD RESISTANCE IN SHORT N+-N--N+ AND N+-P--N+ STRUCTURESVAN DER ZIEL A; SHUR MS; LEE K et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 128-137; BIBL. 14 REF.Article
STATIC NEGATIVE RESISTANCE PHENOMENA IN GAAS DEVICESGATTI E; MALOBERTI F; SVELTO V et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 4; PP. 252-256; BIBL. 12 REF.Article
NEAR BALLISTIC TRANSPORT IN A NONPARABOLIC-BAND STRUCTURE FOR N- AND P-GAASLEE J; SU CB.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 933-935; BIBL. 10 REF.Article
AVALANCHE BREAKDOWN VOLTAGE OF MULTIPLE EPITAXIAL PN JUNCTIONSSUNSHINE RA; ASSOUR J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 459-466; BIBL. 8 REF.Serial Issue
Validation of the charge pumping method down to liquid helium temperatureNGUYEN-DUC, C; GHIBAUDO, G; BALESTRA, F et al.Physica status solidi. A. Applied research. 1991, Vol 126, Num 2, pp K139-K142, issn 0031-8965Article
Doping superlattices (n-i-p-i crystals)DÖHLER, G. H.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1682-1695, issn 0018-9197Article
IL TRANSISTORE A CONTROLLO DI CONDUCIBILITA: UN NUOVO DISPOSITIVO ATTIVOA TRE TERMINALI = LE TRANSISTOR A COMMANDE DE LA CONDUCTIBILITE: UN NOUVEAU DISPOSITIF ACTIF A TROIS BORNES DE SORTIECARUSO A; SPIRITO P; VITALE G et al.1979; ALTA FREQ.; FRA; DA. 1979; VOL. 48; NO 9; PP. 557-562; BIBL. 6 REF.Article
PARTICULARITES DES CARACTERISTIQUES D'ELECTROLUMINESCENCE DES HETERO-STRUCTURES P+-NU -NPTASHCHENKO AA; TIMOKHOV FP.1978; UKRAIN. FIZ. ZH.; UKR; DA. 1978; VOL. 23; NO 12; PP. 1989-1993; ABS. ENG; BIBL. 8 REF.Article
Electron state in doping superlattice-Si-nipi structureWANG ENGE; HUANG HELUAN.Chinese physics. 1986, Vol 6, Num 1, pp 226-230, issn 0273-429XArticle
LOW-TEMPERATURE MILLIMETER WAVE RECEIVERS: LOW-BARRIER CRYOGENIC DIODES.GLASSER LA; KYHL RL.1975; MASSACHUSETTS INST. TECHNOL., R.L.E. PROGR. REP.; U.S.A.; DA. 1975; NO 116; PP. 53; BIBL. 1 REF.Article
A entre deux noms: vers la composition nominale = The preposition à between two nouns : towards nominal compoundingCADIOT, P.Lexique (Lille). 1993, Num 11, pp 193-240, issn 0756-7138Article
OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION-RF PERFORMANCESFRISCOURT MR; ROLLAND PA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 135-137; BIBL. 8 REF.Article
CROISSANCE DE STRUCTURES EPITAXIALES N+-N-N+ AU GAAS, DESTINEES A DES DIODES DE GUNNAGRAFENIN YU V.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 2; PP. 161-164; BIBL. 8 REF.Article
TEMPERATURE-DEPENDENT DESIGN PARAMETERS OF TRAPATT DIODESCHATURVEDI PK; KHOKLE WS.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 8-9; PP. 170-171; BIBL. 2 REF.Serial Issue
AVALANCHE-INITIATED SPACE-CHARGE OSCILLATIONSDWORSKY LN; HARRISON RI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 573-581; BIBL. 5 REF.Serial Issue
HIGH VOLTAGE ELECTRON MICROSCOPY OF INTERFACIAL DEFECTS IN GAASOSIECKI R; THOMAS G.1972; MATER. SCI. ENGNG; NETHERL.; DA. 1972; VOL. 10; NO 1; PP. 53-61; ABS. FR. ALLEM.; BIBL. 20 REF.Serial Issue
Resonant tunneling with mass variation in rectangular n-fold barrier structuresYAMAMOTO, H; KANIE, Y; SANO, H et al.Physica status solidi. B. Basic research. 1992, Vol 169, Num 1, pp K17-K21, issn 0370-1972Article
PARTICULARITES DES PROPRIETES A HAUTE FREQUENCE D'UNE STRUCTURE DE DIODE SYMETRIQUE DANS LAQUELLE LES ELECTRONS SONT EN MOUVEMENT BALISTIQUEBANNOV NA; RYZHIJ VI; FEDIRKO VA et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 57-60; BIBL. 7 REF.Article
COURANTS D'EMISSION DANS L'ARSENIURE DE GALLIUM COMPENSEADIROVICH EH I; MIRSAGATOV SH A; MOROZKIN VV et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 10; PP. 1877-1882; BIBL. 21 REF.Article
Dependence of I-U characteristics of GaAs n+-n-n+ diodes on the active region lengthKACIULIS, S; KIBICKAS, K; PARSELIUNAS, J et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K179-K182, issn 0031-8965Article
The enhancement of exclusion effect in compensated semiconductors under the action of impurity illumination generating minority current carriersARONOV, D. A; KNIGIN, P. I; MAMATKULOV, B. R et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp 683-691, issn 0031-8965Article
Current-voltage relation for abrupt N+-P-N+ and N-i-N structuresBAKKER, J. G. C; BISSCHOP, J; SCHILDERS, W. H. A et al.Solid-state electronics. 1992, Vol 35, Num 7, pp 897-904, issn 0038-1101Article
Some typical features of resonant tunneling in multibarrier systemsROY, C. L; ARIF KHAN.Physica status solidi. B. Basic research. 1993, Vol 176, Num 2, pp K47-K49, issn 0370-1972Article
