DEPENDENCE OF AVALANCHE-INDUCED MINORITY CURRENT ON MULTIPLICATION FACTORSTUART RA.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 1; PP. 21-27; BIBL. 11 REF.Article

ANIMAL BEHAVIOR AS A STRATEGY OPTIMIZER: EVOLUTION OF RESOURCE ASSESSMENT STRATEGIES AND OPTIMAL EMIGRATION THRESHOLDS.PARKER GA; STUART RA.1976; AMER. NATURALIST; U.S.A.; DA. 1976; VOL. 110; NO 976; PP. 1055-1076; BIBL. 18 REF.Article

POLARITY DEPENDENT OXIDE DEFECTS LOCATED USING LIQUID CRYSTALS.ZAKZOUK AK; ECCLESTON W; STUART RA et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 133-134; H.T. 1; BIBL. 12 REF.Article

THE NATURE OF DEFECTS IN SILICON DIOXIDE.ZAKZOUK AK; STUART RA; ECCLESTON W et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1551-1556; BIBL. 13 REF.Article

SPATIAL DISTRIBUTION OF DEFECTS IN SIO₂MUGHAL HA; ECCLESTON W; STUART RA et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 24; PP. 761-762; BIBL. 7 REF.Article

DETERMINATION OF TIN IN CASSITERITE ORES BY AN APPLICATION OF THE MOSSBAUER EFFECT.STUART RA; DONOHOE AJ; BOYLE AJF et al.1969; AUSTRALAS. INST. MING METALLURGY, PROC.; AUS; 1969(6), NUM. 0230, P. 69 A 72Miscellaneous

CONTROL OF DEFECTS IN SILICON DIOXIDE.BAGLEE DA; GILL R; STUART RA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 5; PP. 144-145; BIBL. 6 REF.Article

THICKNESS AND FIELD DEPENDENCE OF DEFECTS IN SILICON DIOXIDEBAGLEE D; ZAKSOUK AK; ECCLESTON W et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 5; PP. 763-767; BIBL. 16 REF.Article