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Thermoelectric power of amorphous silicon and germaniumSTUKE, J.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 3, pp 225-233, issn 0141-8637Article

ELECTRON SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS GERMANIUMSTUTZMANN M; STUKE J; DERSCH H et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 141-151; ABS. GER; BIBL. 18 REF.Article

ELECTRON SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS SILICONDERSCH H; STUKE J; BEICHLER J et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 1; PP. 265-274; ABS. GER; BIBL. 18 REF.Article

LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS SILICONDERSCH H; STUKE J; BEICHLER J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 456-458; BIBL. 10 REF.Article

DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICONFUHS W; MILLEVILLE M; STUKE J et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 2; PP. 495-502; ABS. GER; BIBL. 15 REF.Article

INFLUENCE OF ION IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS GE AND SI.BEYER W; STUKE J; WAGNER H et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 231-240; ABS. ALLEM.; BIBL. 17 REF.Article

PHOTOLUMINESCENCE IN THE AMORPHOUS SYSTEM SIOXCARIUS R; FISCHER R; HOLZENKAMPFER E et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4241-4243; BIBL. 18 REF.Article

PHOTO AND DARK CONDUCTIVITY OF DOPED AMORPHOUS SILICON.REHM W; FISCHER R; STUKE J et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 79; NO 2; PP. 539-547; ABS. ALLEM.; BIBL. 16 REF.Article

ELECTRONIC PROPERTIES OF DOPED GLOW-DISCHARGE AMORPHOUS GERMANIUMHAUSCHILDT D; STUTZMANN M; STUKE J et al.1982; SOLAR ENERGY MATERIALS; ISSN 0165-1633; NLD; DA. 1982; VOL. 8; NO 1-3; PP. 319-330; BIBL. 14 REF.Article

THE INFLUENCE OF SPIN DEFECTS ON RECOMBINATION AND ELECTRONIC TRANSPORT IN AMORPHOUS SILICONVOGET GROTE U; KUEMMERLE W; FISCHER R et al.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 41; NO 2; PP. 127-140; BIBL. 37 REF.Article

Recombination processes in α-Si:H: spin-dependent photoconductivityDERSCH, H; SCHWEITZER, L; STUKE, J et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4678-4684, issn 0163-1829Article

Photo-induced metastable effects in hydrogenated amorphous silicon (a-Si:H)FUHS, W; MELL, H; STUKE, J et al.Annalen der Physik (Leipzig). 1985, Vol 42, Num 2, pp 187-197, issn 0003-3804Article

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