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ENHANCED MOBILITY IN INVERTED ALXGA1-XAS/GAAS HETEROJUNCTIONS: BINARY ON TOP OF TERNARYDRUMMOND TJ; MORKOC H; SU SL et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 23; PP. 870-871; BIBL. 12 REF.Article

INFLUENCE OF BUFFER THICKNESS ON THE PERFORMANCE OF GAAS FIELD EFFECT TRANSISTORS PREPARED BY MOLECULAR BEAM EPITAXYSU SL; THORNE RE; FISCHER R et al.1982; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 4; PP. 961-964; BIBL. 7 REF.Article

DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR TRANSISTORS (DHBJT'S) BY MBE WITH A CURRENT GAIN OF 1650SU SL; TEJAYADI O; DRUMMOND TJ et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 130-132; BIBL. 10 REF.Article

PERFORMANCE OF INVERTED STRUCTURE MODULATION DOPED SCHOTTKY BARRIER FIELD EFFECT TRANSISTORSTHORNE RE; FISCHER R; SU SL et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L223-L224; BIBL. 8 REF.Article

CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

MODULATION-DOPED (AL,GA)AS/GAAS FETS WITH HIGH TRANSCONDUCTANCE AND ELECTRON VELOCITYSU SL; FISCHER R; DRUMMOND TJ et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 794-796Article

A NEW AL0.3GA0.7AS/GAAS MODULATION-DOPED FETKOPP W; FISCHER R; THORNE RE et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 109-111; BIBL. 17 REF.Article

ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA) AS/GAAS FETS AT CRYOGENIC TEMPERATURESDRUMMOND TJ; SU SL; LYONS WG et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1057-1058; BIBL. 8 REF.Article

USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGAL-XAS FIELD-EFFECT TRANSISTORSKOPP W; SU SL; FISCHER R et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 563-565; BIBL. 10 REF.Article

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