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FACTORS CONTROLLING THE CONTACT RESISTANCE OF SEMICONDUCTORSFANG YK; CHANG CY; SU YK et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 577-585; BIBL. 10 REF.Article

CONTACT RESISTANCE IN METAL-SEMICONDUCTOR SYSTEMSFANG YK; CHANG CY; SU YK et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 933-938; BIBL. 10 REF.Article

AN INVESTIGATION OF MINORITY CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALTCHANG CY; SU YK; CHI CC et al.1980; INTERNATION. J. ELECTRON; GBR; DA. 1980; VOL. 48; NO 1; PP. 1-6; BIBL. 10 REF.Article

TEMPERATURE DEPENDENT CHARACTERISTICS OF A PIN AVALANCHE PHOTODIODE (APD) IN GE, SI AND GAASSU YK; CHANG CY; WU TS et al.1979; OPT. QUANTUM ELECTRON.; GBR; DA. 1979; VOL. 11; NO 2; PP. 109-117; BIBL. 15 REF.Article

INVESTIGATION OF SN-DOPED GAAS EPILAYERS GROWN BY LOW PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONLEE MK; CHANG CY; SU YK et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 88-89; BIBL. 8 REF.Article

WAVELENGTH AND TEMPERATURE DEPENDENCE OF RAPD LASER DETECTORSSU YK; CHANG CY; WU TS et al.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 24; PP. 4255-4258; BIBL. 12 REF.Article

TEMPERATURE-DEPENDENT CHARACTERISTICS OF A REACH-THROUGH AVALANCHE PHOTODIODE (RAPD) IN GE, SI AND GAASSU YK; CHANG CY; WU TS et al.1979; OPT. QUANTUM ELECTRON; GBR; DA. 1979; VOL. 11; NO 5; PP. 377-384; BIBL. 17 REF.Article

CHARACTERISTICS OF P-I-N LASER DETECTORS: THEIR DEPENDENCE ON WAVELENGTH AND TEMPERATURESU YK; CHANG CY; WU TS et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 20; PP. 3510-3512; BIBL. 8 REF.Article

GROWTH AND PROPERTIES OF GAP/SI DEVICE BY MOCVDSU YK; CHANG CY; WU TS et al.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 387-392; BIBL. 8 REF.Conference Paper

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