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THE RETENTION OF FLUORINE BY SILICON SURFACES: INTERACTION WITH GOLD-REFRACTORY TRANSISTOR METALLIZATIONS.DAY H; CHRISTOU A; BRESSAN DJ et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 790-792; BIBL. 10 REF.Article

ORIENTATION DES ELEMENTS DES MICROCIRCUITS A SUPPORTS D'ARSENIURE DE GALLIUMBULATOV OS; POPKOVA LI; CHEREPOVSKAYA AV et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 366-367; BIBL. 3 REF.Serial Issue

METHODOLOGY OF ELLIPSOMETRIC MEASUREMENTS OF THE SI-SIO2 DOUBLE LAYER SYSTEM ON SILICON.KRUSZEWSKI J; GUTKOWSKI M.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 2; PP. 131-134; ABS. RUSSE; BIBL. 5 REF.Article

ENTWICKLUNGSRICHTUNGEN BEI GERAETEN ZUR MIKROSTRUKTURERZEUGUNG = TENDANCES DE L'EVOLUTION DES APPAREILS POUR LA FABRICATION DES MICROSTRUCTURESGOMMEL KW.1979; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1979; VOL. 28; NO 10; PP. 446-450Article

FABRICATION AND CHARACTERISTICS OF MOS-FET'S INCORPORATING ANODIC ALUMINUM OXIDE IN THE GATE STRUCTURE.RAYMOND RK; DAS MB.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 181-189; H.T. 1; BIBL. 18 REF.Article

SUR L'APPLICATION DES CONTACTS METAL-SEMICONDUCTEUR POUR L'ETUDE DES DEFAUTS DES COUCHES DIELECTRIQUES SUR LES SEMICONDUCTEURSBUZANEVA EV; DENISYUK VA; STRIKHA VI et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 3; PP. 239-243; BIBL. 4 REF.Serial Issue

THE ANALYSIS OF ANODIC OXIDE FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE TRACER TECHNIQUES.VERPLANKE JC; TIJBURG RP.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 802-804; BIBL. 9 REF.Article

CONTROLE ELLIPSOMETRIQUE DE COUCHES DIELECTRIQUES DANS DES STRUCTURES A SEMICONDUCTEURS AU COURS DE LEUR FABRICATIONBILENKO DI; GALISHNIKOVA YU N; DVORKIN BA et al.1978; OPT. I SPEKTROSK.; SUN; DA. 1978; VOL. 45; NO 1; PP. 107-113; BIBL. 7 REF.Article

STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE CRYSTAL SILICON AND DIFFUSED P-N DIODESBUCKLEY WD; MOSS SC.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1331-1337; H.T. 6; BIBL. 9 REF.Serial Issue

INVESTIGATION OF CARRIER SWEEPOUT IN OPTOELECTRONIC MICROSTRIP DEVICES USING SINGLE-CRYSTAL SILICON SUBSTRATESPLATTE W; STRAUSS F.1978; ARCH. ELEKTRON. OBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 12; PP. 499-501; ABS. GER; BIBL. 8 REF.Article

PHYSICAL CONTACT PROPERTIES OF BERYLLIUM METALIZATION ON SILICON DEVICES.MOONEY JB; MCCALDIN JO.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 4; PP. 625-627; BIBL. 16 REF.Article

PASSIVATION OF GALLIUM ARSENIDE WITH SILICON NITRIDESEKI H; OHOSAKA S; KANDA M et al.1972; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1972; VOL. 20; NO 9-10; PP. 810-816; BIBL. 11 REF.Serial Issue

LA MESURE DES PARAMETRES DES COUCHES MINCES DIELECTRIQUES DOUBLES SUR UN SUBSTRAT SEMICONDUCTEUR PAR UNE METHODE ELLIPSOMETRIQUESVITASHEV KK; SEMENENKO AI; SEMENENKO LV et al.1972; OPT. I SPEKTROSK.; S.S.S.R.; DA. 1972; VOL. 32; NO 5; PP. 1020-1026; BIBL. 13 REF.Serial Issue

ANALYSE DE LA LIGNE MICROBANDE SUR UN SUBSTRAT SEMICONDUCTEUR A AIMANTATION LONGITUDINALEKNISHEVSKAYA LV; KOTOV MN; LAURINAVICHYUS AK et al.1980; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1980; VOL. 20; NO 6; PP. 47-55; ABS. LIT/ENG; BIBL. 10 REF.Article

MOBILE ION INSTABILITY IN SIO2 FILMS ON SILICONRAI BP; SRIVASTAVA RS.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 4; PP. 381-392; BIBL. 36 REF.Article

LOW-DOSE N-TYPE ION IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES.DONNELLY JP; BOLZER CO; LINDLEY WT et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 273-276; BIBL. 12 REF.Article

THIN MBE GAAS MILLIMETRE-WAVE MIXER DIODE USING GE SUBSTRATECHRISTOU A; DAVEY JE; COVINGTON D et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 367-368; BIBL. 4 REF.Article

A MONOLITHIC ZINC-OXIDE-ON-SILICON CONVOLVER.KHURI YAKUB BT; KINO GS.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 188-190; BIBL. 6 REF.Article

A GEODESIC OPTICAL WAVEGUIDE LENS FABRICATED BY ANISOTROPIC ETCHINGNAUMAAN A; BOYD JT.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 234-236; BIBL. 12 REF.Article

SELF-TERMINATING THERMAL OXIDATION OF ALAS EPILAYERS GROWN ON GAAS BY MOLECULAR BEAM EPITAXY.TSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 426-429; BIBL. 9 REF.Article

DIELECTRIC FILM THICKNESS MEASUREMENT FROM THE REFLEXION RELATIONS.SANDERA M.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 1; PP. 110-112; BIBL. 4 REF.Article

LIGHT-EMITTING DIODE OF ZNTE-CDS HETEROJUNCTIONSOTA T; KOBAYASHI K; TAKAHASHI K et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1387-1388; BIBL. 6 REFSerial Issue

SURFACE ACOUSTIC WAVE RESONATOR ON A ZNO-ON-SI LAYERED MEDIUMMARTIN SJ; SCHWARTZ SS; GUNSHOR RL et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 561-569; BIBL. 25 REF.Article

PROPAGATION DES ONDES ELECTROMAGNETIQUES SUPERFICIELLES LE LONG DES BANDES METALLIQUES SUR UN SEMICONDUCTEURBOLTAR KO; SURIS RA; FEDIRKO VA et al.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 18; NO 6; PP. 1230-1232; BIBL. 5 REF.Article

SEZAWA TO RAYLEIGH MODE CONVERSION IN THE ZNO-ON-SI SURFACE ACOUSTIC WAVE DEVICE CONFIGURATIONMELLOCH MR; GUNSHOR RL; PIERRET RF et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 476-477; BIBL. 8 REF.Article

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