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FULLY DECODED MNOS STORAGE ARRAYS IN ESFI MOS TECHNOLOGY.HORNINGER K.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 444-446; BIBL. 6 REF.Article

SAPPHIRE BRINGS OUT THE BEST IN C-MOS.EATON SS.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 12; PP. 115-120Article

ION IMPLANTATION IN SILICON FILMS ON SAPPHIRE.EKLUND KH; HOLMEN G; PETERSTROM S et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 6; PP. 283-284; BIBL. 6 REF.Article

SILICON-ON-SAPPHIRE TECHNOLOGY PRODUCES HIGH-SPEED SINGLE-CHIP PROCESSOR.FORBES BE.1977; HEWLETT-PACKARD J.; U.S.A.; DA. 1977; VOL. 28; NO 8; PP. 2-8; BIBL. 1 REF.Article

C/V CURVES FOR GATE-CONTROLLED DIODES IN SILICON ON SAPPHIRE.KRANZER D; GASSAWAY JD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 2; PP. 50-52; BIBL. 12 REF.Article

UTILISATION DES STRUCTURES SILICIUM SUR ISOLANT POUR LA REALISATION DE CIRCUITS INTEGRES MOS.BERNARD J; BOREL J; GARCIA M et al.1974; COMMISSAR. ENERG. ATOM., BULL. INFORM. SCI. TECH.; FR.; DA. 1974; NO 194; PP. 63-72; ABS. ANGL.; BIBL. 9 REF.Article

THE EFFECT OF ARSENIC IN IMPROVING LIFETIME IN SILICON-ON-SAPPHIRE FILMS.MCGREIVY DJ; WISWANATHAN CR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 9; PP. 505-506; BIBL. 9 REF.Article

ION IMPLANTATION AND HCL TREATMENT SIMPLIFY SOS/CMOS PROCESSING AND SLASH LEAKAGE CURRENT.MIZOKAMI H; INO M; HASHIMOTO T et al.1975; J. ELECTRON. ENGNG; JAP.; DA. 1975; NO 103; PP. 26-30Article

CONTRIBUTION A L'ETUDE ET A LA REALISATION DE CIRCUITS ACTIFS SUR SILICIUM SUR ISOLANT.GARCIA M.1974; RAPP. C.E.A.; FR.; DA. 1974; NO 4587; ABS. ANGLArticle

SILICON-ON-SAPPHIRE SUBSTRATES OVERCOME MOS LIMITATIONSRAPP AK; ROSS EC.1972; ELECTRONICS; U.S.A.; DA. 1972; VOL. 45; NO 20; PP. 113-116Serial Issue

FILAMENTATION IN SILICON-ON-SAPPHIRE HOMOGENEOUS THIN FILMSPONTIUS DH; SMITH WB; BUDENSTEIN PP et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 1; PP. 331-340; BIBL. 20 REF.Serial Issue

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

GRAPHICAL METHOD FOR DETERMINING THE FLAT BAND VOLTAGE FOR SILICON ON SAPPHIRE.HYNECEK J.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 119-120; BIBL. 6 REF.Article

MOBILITY OF CURRENT CARRIERS IN SILICON-ON SAPPHIRE (SOS) FILMS.HSU ST; SCOTT JH JR.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 2; PP. 240-253; BIBL. 13 REF.Article

A NEW VOLTAGE-TUNABLE DISTRIBUTED RC NOTCH FILTER SUITABLE FOR SOS REALIZATION.WONG PHK; YOUNG L.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 523-524; BIBL. 6 REF.Article

CMOS/SOS SEMI-STATIC SHIFT REGISTERS.IPRI AC; SARACE JC.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 337-338; BIBL. 4 REF.Article

FIVE NODE MODEL FOR SOS/CMOS.OH SY; WARD D.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 127-134; BIBL. 6 REF.Conference Paper

LOW-THRESHOLD LOW-POWER CMOS/SOS FOR HIGH-FREQUENCY COUNTER APPLICATIONS.IPRI AC; SARACE JC.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 329-336; BIBL. 12 REF.Article

THRESHOLD VOLTAGE ENGINEERING WITH ESFI SOS MOST'S.SCHLOTTERER H.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 221-224; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

CAPACITANCES OF COPLANAR MICROSTRIP LINES IN INTEGRATED CIRCUITS.FRITZSCHE H.1976; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 2; PP. 72-75; BIBL. 12 REF.Article

AN ALUMINUM/SIO2/SILICON-ON-SAPPHIRE LIGHT VALVE MATRIX FOR PROJECTION DISPLAYS.GULDBERG J; NATHANSON HC; BALTHIS DL et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 391-393; BIBL. 5 REF.Article

RECENT DEVELOPMENTS IN CMOS/SOS.KAISER HW; GEHWEILER WF; STOTZ WJ et al.1973; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1973; VOL. 13; NO 9; PP. 38-46 (6P.)Article

POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

RECENT SOS TECHNOLOGY ADVANCES AND APPLICATIONS.RONEN RS; MICHELETTI FB.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 8; PP. 39-46; BIBL. 1 P. 1/2Article

SECOND BREAKDOWN AND DAMAGE IN JUNCTION DEVICESSMITH WB; PONTIUS DH; BUDENSTEIN PP et al.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 8; PP. 731-744; BIBL. 32 REF.Serial Issue

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