X-RAY SCATTERING FROM LIQUID ³HE-⁴HE MIXTURESSUEMITSU M; SAWADA Y.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 7; PP. 4593-4603; BIBL. 34 REF.Article

COLLISIONAL EXCITATION TRANSFER AND RADIATIVE DECAY OF NE 2P LEVELS IN CAPILLARY DISCHARGE.NAKATA R; SUEMITSU M; FUKUDA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1199-1205; BIBL. 16 REF.Article

Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopyENTA, Y; TAKEGAWA, Y; SUEMITSU, M et al.Applied surface science. 1996, Vol 100-01, pp 449-453, issn 0169-4332Conference Paper

Mechanism for homogenizing electrical properties of semi-insulating GaAs during ingot annealingSUEMITSU, M; TERADA, K; NISHIJIMA, M et al.Journal of applied physics. 1991, Vol 70, Num 5, pp 2594-2598, issn 0021-8979Article

Carbon concentration dependence of charged point-defect density in semi-insulating GaAs as observed by nuclear magnetic resonanceSUEMITSU, M; NISHIJIMA, M; MIYAMOTO, N et al.Applied physics letters. 1990, Vol 57, Num 4, pp 398-399, issn 0003-6951, 2 p.Article

Low temperature silicon surface cleaning by HF etching/ultraviolet ozone cleaning (HF/UVOC) method (I)―Optimization of the HF treatmentSUEMITSU, M; KANEKO, T; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 12, pp 2421-2424, issn 0021-4922, 1Article

Low temperature silicon surface cleaning by HF etching/ultraviolet ozone cleaning (HF/UVOC) method (II)―in situy UVOCKANEKO, T; SUEMITSU, M; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 12, pp 2425-2429, issn 0021-4922, 1Article

Epitaxial graphene on silicon substratesSUEMITSU, M; FUKIDOME, H.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 37, issn 0022-3727, 374012.1-374012.11Article

Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxyTSUKIDATE, Y; SUEMITSU, M.Applied surface science. 2001, Vol 175-76, pp 43-48, issn 0169-4332Conference Paper

Formation of 250-μm-diameter diamond crystals by combustion flame method : effects of preformation of molybdenum oxide on the substrateABE, T; SUEMITSU, M; MIYAMOTO, N et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 971-976, issn 0021-8979Article

Photoemission studies and outgassing-rate measurements on aluminum-alloy surfaces lathed with various alcoholsSUEMITSU, M; SHIMOYAMADA, H; MATSUZAKI, N et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 1, pp 188-192, issn 0734-2101Article

Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealingSUEMITSU, M; TERADA, K; NISHIJIMA, M et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp L1654-L1656, issn 0021-4922, 2Article

High quality silicon epitaxy at 500°C using silane gas-source molecular beam techniqueHIROSE, F; SUEMITSU, M; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 11, pp L2003-L2006, issn 0021-4922, part 2Article

Effects of refraction of X-rays in double-crystal topographyNIWANO, M; KANAI, A; SUEMITSU, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 5, pp 849-854, issn 0021-4922, 1Article

Mechanical and tribological properties of boron, nitrogen-coincorporated diamond-like carbon films prepared by reactive radio-frequency magnetron sputteringNAKAZAWA, H; SUDOH, A; SUEMITSU, M et al.Diamond and related materials. 2010, Vol 19, Num 5-6, pp 503-506, issn 0925-9635, 4 p.Conference Paper

Point defects generated by oxidation of silicon crystal surfaceSUEZAWA, M; YAMAMOTO, Y; SUEMITSU, M et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5156-5158, issn 0921-4526, 3 p.Conference Paper

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressureMATSUMOTO, M; INAYOSHI, Y; SUEMITSU, M et al.Applied surface science. 2008, Vol 254, Num 19, pp 6208-6210, issn 0169-4332, 3 p.Conference Paper

Temperature-dependent carbon incorporation into the Si_1-yC_y film during gas-source molecular beam epitaxy using monomethylsilaneKONNO, A; SENTHIL, K; MURATA, T et al.Applied surface science. 2006, Vol 252, Num 10, pp 3692-3696, issn 0169-4332, 5 p.Article

Autocatalytic-reaction analysis of the time-evolution of the thermal recovery of EL2 in semi-insulating GaAsFUKUYAMA, A; SAKAI, K; IKARIA, T et al.Physica. B, Condensed matter. 2004, Vol 348, Num 1-4, pp 1-5, issn 0921-4526, 5 p.Conference Paper

Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2×1SUEMITSU, M; NAKAZAWA, H; MIYAMOTO, N et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 449-453, issn 0169-4332Conference Paper

Development of extremely high vacuums with mirror-polished AI-alloy chambersSUEMITSU, M; UNEME, Y; MIYAMOTO, N et al.Vacuum. 1993, Vol 44, Num 5-7, pp 425-428, issn 0042-207XConference Paper

Interdiffusion of Si and Ge atoms during gas-source MBE of Ge on Si(100) at 500-800°CSUEMITSU, M; CHIBA, K; MIYAMOTO, N et al.Japanese journal of applied physics. 1990, Vol 29, Num 9, pp L1591-L1593, issn 0021-4922, 2Article

Si and Ge gas-source molecular beam epitaxy (GSMBE)SUEMITSU, M; HIROSE, F; MIYAMOTO, N et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 1015-1020, issn 0022-0248Conference Paper

EPR study on Cr²⁺ distribution in LEC GaAS:Cr wafersSUEMITSU, M; SUZUKI, Y; MIYAMOTO, N et al.Japanese journal of applied physics. 1984, Vol 23, Num 6, pp 714-718, issn 0021-4922, 1Article

Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser depositionNAKAZAWA, H; YAMAGATA, Y; SUEMITSU, M et al.Thin solid films. 2004, Vol 467, Num 1-2, pp 98-103, issn 0040-6090, 6 p.Article