OPTICAL ABSORPTION BAND EDGE IN SINGLE CRYSTAL GES.WILEY JD; BREITSCHWERDT A; SCHONHERR E et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 3; PP. 355-359; BIBL. 22 REF.Article

INFRARED REFLECTIVITY AND RAMAN SCATTERING IN GES.WILEY JD; BUCKEL WJ; SCHMIDT RL et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 2489-2496; BIBL. 23 REF.Article

THE DIELECTRIC FUNCTION OF GES SINGLE CRYSTALS DETERMINED BY ELECTRON ENERGY LOSS SPECTROSCOPY.VENGHAUS H; BUCHNER U.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 603-607; ABS. ALLEM.; BIBL. 11 REF.Article

ETUDE DES MICROCHAMPS ELECTRIQUES INTERNES DANS GES PAR LA METHODE DE L'ABSORPTION ELECTROOPTIQUE SPONTANEEBLETSKAN DI; BUDYANSKIJ VI; KOPINETS IF et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 10; PP. 1648-1651; ABS. ANGL.; BIBL. 6 REF.Article

PHOTOLUMINESCENCE DE GESBAGAEV VS; PADUCHIKH LI; STOPACHINSKIJ VB et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 2; PP. 398-400; BIBL. 10 REF.Article

FINE STRUCTURE IN THE REFLECTIVITY OF GESWILEY JD; FEHRENBACH GW.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 3; PP. 2963-2965; BIBL. 4 REF.Article

ELECTRICAL STRUCTURE AND TRANSPORT IN AMORPHOUS GES LAYERS.SKACHA J.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 2; PP. K143-K146; BIBL. 7 REF.Article

OPTICAL AND PHOTOELECTRICAL PROPERTIES OF GLASSY GES_X.ZAVETOVA M; ABRAHAM A.1974; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1974; VOL. 24; NO 12; PP. 1406-1411; BIBL. 11 REF.Article

ATOMIC PSEUDOPOTENTIALS FOR ORTHORHOMBIC IV-VI COMPOUNDSCIUCCI G; GUARNIERI A; MASSERINI GL et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 2; PP. 75-80; BIBL. 15 REF.Article

PHONONS IN AX₂ GLASSES: FROM MOLECULAR TO BAND-LIKE MODES.SEN PN; THORPE MF.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 8; PP. 4030-4038; BIBL. 17 REF.Article

ANGULAR-RESOLVED UV PHOTOEMISSION AND THE BAND STRUCTURE OF GES.GRANDKE T; LEY L.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 2; PP. 832-842; BIBL. 13 REF.Article

INFLUENCE OF NEUTRON RADIATION ON THERMAL PARAMETERS OF AMORPHOUS SEMICONDUCTORS.MACKO P; MACKOVA V.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 3; PP. 180-184; BIBL. 12 REF.Article

SEMICONDUCTORS OF THE TYPE ME^II ME^IVS₃.VAN ALPEN U; FENNER J; GMELIN E et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 3; PP. 175-180; BIBL. 8 REF.Article

SPECTRES DE VIBRATION DES CHALCOGENURES DE GERMANIUM CRISTALLINS ET VITREUXARTAMONOV VV; BEREZHINSKIJ LI; BLETSKAN DI et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 3; PP. 334-339; ABS. ENG; BIBL. 16 REF.Article

INFRARED REFLECTIVITY OF GES.MIHAJLOVIC P; NIKOLIC PM; HUGHES OH et al.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 21; PP. L599-L602; BIBL. 4 REF.Article

REVERSIBLE PHOTOSTRUCTURAL CHANGE IN MELT-QUENCHED GES₂ GLASSHAMANAKA H; TANAKA K; IIZIMA S et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 3; PP. 355-357; BIBL. 15 REF.Article

EXPONENTIAL ABSORPTION EDGES IN GESHARITONIDIS JH; LAMBROS AP; ECONOMOU NA et al.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 6; PP. 659-663; BIBL. 14 REF.Article

OBTENTION, ETUDE DES PROPRIETES PHYSIQUES DES MATERIAUX DU TYPE A^IVB^VI ET UTILISATION POSSIBLE EN MICROELECTRONIQUE (SYNTHESE)KOPINETS IF; BLETSKAN DI; MIGOLINETS IM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 25; PP. 3-17; BIBL. 2 P.Article

PHOTO-ENHANCED DIFFUSION OF AG IN AMORPHOUS GE₂S₃ FILMSISHIKAWA R.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 2; PP. 99-102; BIBL. 12 REF.Article

PHOTO-INDUCED ESR AND OPTICAL ABSORPTION EDGE SHIFT IN AMORPHOUS GE-S FILMSSHIMIZU T; KUMEDA M; WATANABE I et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 3; PP. 223-227; BIBL. 11 REF.Article

EPR INVESTIGATION OF AG-DOPED GE-S GLASSES.DURNY R; BARANCOK D.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. K177-K179; BIBL. 7 REF.Article

INVESTIGATION OF THE BAND STRUCTURE OF GERMANIUM CHALCOGENIDES BY MEANS OF PHOTOELECTRON SPECTROSCOPY.KOSAKOV A; NEUMANN H; LEONHARDT G et al.1977; J. ELECTRON SPECTROSC. RELAT. PHENOMENA; NETHERL.; DA. 1977; VOL. 12; NO 2; PP. 181-189; BIBL. 46 REF.Article

VARIATION THERMIQUE DE LA LIMITE D'ABSORPTION OPTIQUE DANS GE₂S₃ ET GE₂SE₃ VITREUXSARSEMBINOV SH SH; ESENBAEV MG.1977; IZVEST. AKAD. NAUK KAZAKH. S.S.R., SER. FIZ.-MAT.; S.S.S.R.; DA. 1977; VOL. 15; NO 2; PP. 55-57; ABS. KAZ.; BIBL. 6 REF.Article

PROPRIETES PHOTOELECTRIQUES DES MONOCRISTAUX DE GES OBTENUS A PARTIR DE LA PHASE GAZEUSEBLETSKAN DI; BUDYANSKIJ VI; KOPINETS IF et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 202-205; H.T. 1Article

PRESSURE DEPENDENCE OF THE RAMAN SPECTRA OF THE IV-VI LAYER COMPOUNDS GES AND GESE.CHANDRASEKHAR HR; HUMPHREYS RG; CARDONA M et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2981-2983; BIBL. 13 REF.Article