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Effect of Pulse-Plated Nickel Barriers on Tin Whisker Growth for Pure Tin Solder JointsCHEN, Min-Na; DING, Shi-Jin; SUN, Qing-Qing et al.Journal of electronic materials. 2008, Vol 37, Num 6, pp 894-900, issn 0361-5235, 7 p.Article

A Novel 1T-1D DRAM Cell for Embedded ApplicationCAO, Cheng-Wei; ZANG, Song-Gan; XI LIN et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1304-1310, issn 0018-9383, 7 p.Article

Atomic layer deposition of ZnO on thermal SiO₂ and Si surfaces using N₂-diluted diethylzinc and H₂O₂ precursorsQIAN, Ke-Jia; SUN CHEN; BAO ZHU et al.Applied surface science. 2012, Vol 258, Num 10, pp 4657-4666, issn 0169-4332, 10 p.Article

Enhancement of Resistive Switching Characteristics in Al₂O₃-Based RRAM With Embedded Ruthenium NanocrystalsLIN CHEN; GOU, Hong-Yan; SUN, Qing-Qing et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 794-796, issn 0741-3106, 3 p.Article

Electronic structure and optical properties of Nb doped Al₂O₃ on Si by atomic layer depositionYAN XU; LIN CHEN; SUN, Qing-Qing et al.Solid state communications. 2010, Vol 150, Num 35-36, pp 1690-1692, issn 0038-1098, 3 p.Article

Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer depositionLIN DONG; SUN, Qing-Qing; YU SHI et al.Thin solid films. 2009, Vol 517, Num 15, pp 4355-4359, issn 0040-6090, 5 p.Article

Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer depositionZHU, Shang-Bin; YANG GENG; LU, Hong-Liang et al.Journal of alloys and compounds. 2013, Vol 577, pp 340-344, issn 0925-8388, 5 p.Article

Preparation of methotrexate-loaded, large, highly-porous PLLA microspheres by a high-voltage electrostatic antisolvent processCHEN, Ai-Zheng; YANG, Yue-Mei; WANG, Shi-Bin et al.Journal of materials science. Materials in medicine. 2013, Vol 24, Num 8, pp 1917-1925, issn 0957-4530, 9 p.Article

Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al₂O₃ and AlNYAN XU; LIN CHEN; SUN, Qing-Qing et al.Thin solid films. 2011, Vol 519, Num 18, pp 6000-6003, issn 0040-6090, 4 p.Article

Nonvolatile Metal-Oxide-Semiconductor Capacitors with Ru-RuO_x Composite Nanodots Embedded in Atomic-Layer-Deposited Al₂O₃ FilmsGOU, Hong-Yan; DING, Shi-Jin; YUE HUANG et al.Journal of electronic materials. 2010, Vol 39, Num 8, pp 1343-1350, issn 0361-5235, 8 p.Article