CONTACT RESISTIVITY OF TIN P⁺-SI AND N⁺-SIFINETTI M; SUNI I; NICOLET MA et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 3; PP. 179-183; BIBL. 9 REF.Article

INTERDIFFUSION OF THIN BILAYERS OF COPPER AND NICKEL = INTERDIFFUSION DE BICOUCHES MINCES DE CUIVRE ET DE NICKELSUNI I; NICOLET MA; MAEENPAEA M et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 79; NO 1; PP. 69-73; BIBL. 9 REF.Article

Effect of three-body dispersion interactions on the surface dynamics of Ar(111)SUNI, I. I.Surface science. 1997, Vol 391, Num 1-3, pp L1212-L1216, issn 0039-6028Article

Atomic force microscopy of Au deposition from aqueous HF onto Si(111)ROSSITER, C; SUNI, I. I.Surface science. 1999, Vol 430, Num 1-3, pp L553-L557, issn 0039-6028Article

Differential capacitance studies of the specific adsorption of thiosulfate on silverSRINIVASAN, R; SUNI, I. I.Journal of applied electrochemistry. 1998, Vol 28, Num 9, pp 993-998, issn 0021-891XArticle

An optical method for monitoring metal contamination during aqueous processing of silicon wafersCHOPRA, D; SUNI, I. I.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1688-1692, issn 0013-4651Article

Electroless deposition of Au onto Si(111) studied by surface second harmonic generationSRINIVASAN, R; SUNI, I. I.Surface science. 1998, Vol 408, Num 1-3, pp L698-L702, issn 0039-6028Article

ELECTRICAL CHARACTERISTICS OF AMORPHOUS IRON-TUNGSTEN CONTACTS ON SILICONFINETTI M; PAN ETS; SUNI I et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 987-989; BIBL. 18 REF.Article

Angular-radial coupling in the tunneling motion of (HCCH)₂SUNI, I. I; KLEMPERER, W.The Journal of chemical physics. 1993, Vol 98, Num 2, pp 988-997, issn 0021-9606Article

STABLE METALLIZATION SYSTEMS FOR SOLAR CELLSMAEENPAEAE M; SUNI I; SIGURD D et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 763-769; ABS. FRE; BIBL. 21 REF.Article

THERMAL OXIDATION OF SPUTTERED TIN DIFFUSION BARRIERSSIGURD D; SUNI I; WIELUNSKI L et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 5; NO 1; PP. 81-86; BIBL. 14 REF.Article

Amorphous metallic alloys in semiconductor contact metallizationsNICOLET, M.-A; SUNI, I; FINETTI, M et al.Solid state technology. 1983, Vol 26, Num 12, pp 129-133, issn 0038-111XArticle

Recrystallization of amorphous silicon layers on sapphirePAI, C. S; LAU, S. S; SUNI, I et al.Thin solid films. 1983, Vol 109, Num 3, pp 263-281, issn 0040-6090Article

Substrate orientation dependence of enhanced epitaxial regrowth of siliconHO, K. T; SUNI, I; NICOLET, M.-A et al.Journal of applied physics. 1984, Vol 56, Num 4, pp 1207-1212, issn 0021-8979Article

Investigation of ionic contamination removal from silicon dioxide surfacesLIN, H; BUSNAINA, A. A; SUNI, I. I et al.Surface engineering. 2002, Vol 18, Num 3, pp 233-236, issn 0267-0844Article

Effects of plasma activation on hydrophilic bonding of Si and SiO₂SUNI, T; HENTTINEN, K; SUNI, I et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 6, pp G348-G351, issn 0013-4651Article

Preliminary structural characterization of complexes of cyanogen : NH₃-NCCN and (NCCN)₂SUNI, I. I; SEONGHOON LEE; KLEMPERER, W et al.Journal of physical chemistry (1952). 1991, Vol 95, Num 7, pp 2859-2864, issn 0022-3654, 6 p.Article

Titanium nitride as a diffusion barrier between nickel silicide and aluminumFINETTI, M; SUNI, I; NICOLET, M.-A et al.Journal of electronic materials. 1984, Vol 13, Num 2, pp 327-340, issn 0361-5235Article

Finite metal-sheet-resistance in contact resistivity measurements: application to Si/TiN contactsFINETTI, M; SUNI, I; NICOLET, M.-A et al.Solid-state electronics. 1983, Vol 26, Num 11, pp 1065-1067, issn 0038-1101Article

GE-SI HETEROSTRUCTURES BY CRYSTALLIZATION OF AMORPHOUS LAYERSMAENPAA M; HUNG LS; GRIMALDI MG et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 82; NO 4; PP. 347-356; BIBL. 17 REF.Article

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation techniqueXUEJIE SHI; HENTTINEN, K; SUNI, T et al.IEEE electron device letters. 2005, Vol 26, Num 9, pp 607-609, issn 0741-3106, 3 p.Article

Influence of F and Cl on the recrystallization of ion-implanted amorphous SiSUNI, I; SHRETER, U; NICOLET, M.-A et al.Journal of applied physics. 1984, Vol 56, Num 2, pp 273-278, issn 0021-8979Article

Current crowding and misalignment effects as sources of error in contact resistivity measurements. I: Computer simulation of conventional CER and CKR structuresSCORZIONI, A; FINETTI, M; GRAHN, K et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 3, pp 525-531, issn 0018-9383Article

Electrical characteristics of amorphous molybdenum-nickel contacts to siliconKUNG, K. T.-Y; SUNI, I; NICOLET, M.-A et al.Journal of applied physics. 1984, Vol 55, Num 10, pp 3882-3885, issn 0021-8979Article

Dissolution kinetics for atomic, molecular, and ionic contamination from silicon wafers during aqueous processingSUNI, I. I; GALE, G. W; BUSNAINA, A. A et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 9, pp 3522-3526, issn 0013-4651Article