ELLIPSOMETRIC MEASUREMENT OF THIN SILICON FILMS ON EVAPORATED ALUMINUM-COPPER.MAGILL PJ.1978; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1978; VOL. 15; NO 1; PP. 122-124; BIBL. 8 REF.Article

SELENIUM CRYSTALLIZATION INDUCED BY COROTRON CHARGING.PINSLER HW; BROWER WE.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 4; PP. 393-396; BIBL. 25 REF.Article

STUDIES ON SPECIMEN CONTAMINATION BY TRANSMISSION ELECTRON MICROSCOPYKUMAO A; HASHIMOTO H; SHIRAISHI K et al.1981; J. ELECTRON MICROSC.; ISSN 0022-0744; JPN; DA. 1981; VOL. 30; NO 3; PP. 161-170; BIBL. 26 REF.Article

SURFACE STUDIES OF ABSORBING THIN SOLID FILMSBOHIDAR H; CHOPRA S.1981; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1981; VOL. 38; NO 1; PP. 52-56; BIBL. 7 REF.Article

LARGE-AREA UNIFORM GROWTH OF <100> SI THROUGH AL FILM BY SOLID EPITAXY.MAJNI G; OTTAVIANI G.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 125-126; BIBL. 14 REF.Article

ENHANCED CRYSTALLINITY OF SILICON FILMS GROWN FROM EUTECTIC MELT ON ALUMINUM SHEETS.SAITO T; SEKI Y.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 600-602; BIBL. 8 REF.Article

REDISTRIBUTION DE SI DANS LES STRUCTURES SI-AL-SI (111) AUX BASSES TEMPERATURES DE RECUITYURCHENKO NP; BATALIN GI; STRIKHA VI et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 8; PP. 1352-1353; H.T. 1; BIBL. 14 REF.Article

SMALL-ANGLE-SCATTERING OF VOIDS IN HYDROGENATED AMORPHOUS SILICOND'ANTONIO P; KONNERT JH.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 16; PP. 1161-1163; BIBL. 11 REF.Article

EFFECT OF SUBSTRATE TEMPRERATURE ON THE THICKNESS OF EVAPORATED SE-36.7 AT.% AS ALLOY FILMSABOWITZ G; LEDER LB.1978; J. VACUUM SCI. TECHNOL.; USA; DA. 1978; VOL. 15; NO 5; PP. 1746-1751; BIBL. 12 REF.Article

FORMATION OF ETA ALUMINA BY ANODIC OXIDATION OF ALUMINUMYAMADA M; MITA I.1982; CHEM. LETT.; ISSN 0366-7022; JPN; DA. 1982; NO 5; PP. 759-762; BIBL. 10 REF.Article

GROWTH AND STRUCTURE OF MONOLAYERS AND DOUBLE LAYERS OF LEAD AND TIN ON ALUMINIUM (111) = CROISSANCE ET STRUCTURE DE MONOCOUCHES ET DE DOUBLES COUCHES DE PLOMB ET D'ETAIN SUR L'ALUMINIUM (111)ARGILE C; RHEAD GE.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 67; NO 2; PP. 299-308; BIBL. 13 REF.Article

PHOTOINDUZIERTE PHASENUMWANDLUNGEN IN SELENSCHICHTEN = TRANSFORMATIONS DE PHASE PHOTOINDUITES DANS LES COUCHES DE SELENIUMFIEDLER H; LAUCKNER J; FINKE J et al.1978; J. SIGNALAUFZEICHN.-MATER.; DDR; DA. 1978; VOL. 6; NO 6; PP. 467-473; ABS. RUS/ENG; BIBL. 18 REF.Article

STRUCTURAL AND ELECTRICAL PROPERTIES OF ALN-AU COMPOSITE FILMSUEMURA Y; IWATA M.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 2; PP. L55-L58; BIBL. 12 REF.Article

UTILISATION DE SOURCES A CATHODE FROIDE POUR LA CARACTERISATION DES SURFACES.ROMAND M; BADOR R; ROCHE A et al.1977; J. MICR. SPECTROSC. ELECTRON.; FR.; DA. 1977; VOL. 2; NO 6; PP. 627-634; ABS. ANGL.; BIBL. 20 REF.Article

AES INVESTIGATIONS OF THE INTERFACE BETWEEN SUBSTRATE AND CHROMIUM FILMS PREPARED BY EVAPORATION AND ION PLATING.MARTINSON CWB; NORDLANDER PJ; KARLSSON SE et al.1977; VACUUM; G.B.; DA. 1977; VOL. 27; NO 3; PP. 119-123; BIBL. 11 REF.; (INT. SYMP. VAC. THIN FILM TECHNOL. PROC.; UPPSALA; 1976)Conference Paper

PRODUCTION OF THIN TUNGSTEN FILMS.BALALIKIN NI; BUCH J; KATRASEV VV et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 38; NO 3; PP. 255-260; BIBL. 6 REF.Article

ADHESION STUDY OF SILVER FILMS DEPOSITED FROM A HOT HOLLOW-CATHODE SOURCE.NAIMON ER; VIGIL D; VILLEGAS JP et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 1131-1134; BIBL. 10 REF.Article

THE INTERFACE ORIENTATION OF PERYLENE RED AND PHTHALOCYANINE MOLECULES VAPOR DEPOSITED ON ALUMINUMDEBE MK.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 1; PP. 74-79; BIBL. 6 REF.Article

PULSED LASER HEATING CALCULATIONS INCORPORATING VAPOURIZATIONJAIN AK; KULKARNI VN; SOOD DK et al.1981; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1981; VOL. 25; NO 2; PP. 127-133; BIBL. 25 REF.Article

REACTION OF N₂⁺ BEAMS WITH ALUMINUM SURFACESTAYLOR JA; RABALAIS JW.1981; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1981; VOL. 75; NO 4; PP. 1735-1745; BIBL. 30 REF.Article

PREPARATION AND PROPERTIES OF BINARY METAL MONOLAYERS. II: PB AND SN ON AL (100)ARGILE C; RHEAD GE.1978; SURF. SCI.; NLD; DA. 1978; VOL. 78; NO 1; PP. 125-140; BIBL. 18 REF.Article

TRANSIENT PITTING DURING FILM GROWTH ON ALUMINUM AT 1000 MV VS. SCE.ZAHAVI J; WARD ID; METZGER M et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 574-575; BIBL. 6 REF.Article

EXPERIMENTAL ASPECTS OF ELECTRON CHANNELING PATTERNS IN SCANNING ELECTRON MICROSCOPY. II. ESTIMATION OF CONTRAST DEPTH.YAMAMOTO T.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. 467-476; ABS. ALLEM.; BIBL. 18 REF.Article

OXIDE THICKNESS MEASUREMENTS BY INFRARED ELLIPSOMETRY.ALLEN TH; SUNDERLAND RJ.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 45; NO 1; PP. 169-182; BIBL. 9 REF.Article

FORMATION OF AL-NITRIDE FILMS AT ROOM TEMPERATURE BY NITROGEN ION IMPLANTATION INTO ALUMINUMLIESKE N; HEZEL R.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5806-5810; BIBL. 22 REF.Article