Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("SUPPORT SI")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 123257

  • Page / 4931

Export

Selection :

  • and

CRYSTALLOGRAPHIC DEFECTS IN EPITAXIAL SILICON FILMS.RAVI KP.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 171-183; BIBL. 1 P.Article

LIMITES D'ABSORPTION FONDAMENTALE FLOUES COMME CARACTERISTIQUE DE LA STRUCTURE DES COUCHESMATVEEVA LA; TKHORIK YU A.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 16; PP. 39-41; BIBL. 10 REF.Article

SUR LE MECANISME DE CROISSANCE PAR GOUTTE DU CARBURE DE SILICIUM SUR LE SILICIUMKALNACH YA V; KIPLOKA AA; PROKOPOVICH IM et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 5; PP. 58-62; ABS. ANGL.; BIBL. 2 REF.Article

STACKING FAULTS IN SILICON EPITAXIAL LAYERS.AHARONI A.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 4-5; PP. 167-180; BIBL. 6 REF.; (ISRAELI VAC. CONGR. 4. PROC.; BEERSHEVA; 1975)Conference Paper

ETUDE PAR DIFFRACTION ELECTRONIQUE DES COUCHES POLYCRISTALLINES DE SICHISTYAKOV YU D; KOROBOV IV; MIKHAJLOV YU A et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 1; PP. 12-14; BIBL. 3 REF.Article

A PHOTOTRANSISTOR WITH CONCENTRIC ELECTRODES ON THE SI SUBSTRATECHEN CW; GUSTAFSON TK.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 8; PP. 200-202; BIBL. 4 REF.Article

ETUDE DU DEPOT DE MOLYBDENE EN PHASE VAPEUR A PARTIR DE MOCL5.CROSET M; COLOMBIER M.1974; DGRST-7371343; FR.; DA. 1974; PP. 1-6; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.)Report

SELECTIVE REMOVAL OF BP FROM SI SUBSTRATE.TAKIGAWA M; SATOH T; SHOHNO K et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 824-825; BIBL. 4 REF.Article

DEPOT D'UNE COUCHE D'OR SUR DES MONOCRISTAUX DE SILICIUM ET DE GERMANIUMKRIKSHTOPAJTIS IB.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 6; PP. 193; BIBL. 2 REF.Article

CONTRIBUTION A L'ETUDE DE L'ADSORPTION ET DE LA NUCLEATION DE L'INDIUM SUR SUBSTRATS DE SILICIUM.NGUYEN TAN TUAN ANH.1973; AO-CNRS-12119; FR.; DA. 1973; PP. (108P.); H.T. 27; BIBL. 3 P. 1/2; (THESE DOCT. SCI. PHYS.; UNIV. SCI. MED. GRENOBLE)Thesis

REDUCTION OF AUTODOPING.BOZLER CO.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1705-1709; BIBL. 7 REF.Article

PLATINUM SILICIDE FORMATION: ELECTRON SPECTROSCOPY OF THE PLATINUM-PLATINUM SILICIDE INTERFACE.DANYLUK S; MCGUIRE GE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5141-5144; BIBL. 9 REF.Article

CINETIQUE DE LA FORMATION DES PELLICULES DE NITRURE DE SILICIUM A LA SURFACE DU SILICIUM DANS LE SYSTEME SIH4-NH3-H2GURSKIJ LI; KOLESHKO VM; REZNIKOV BS et al.1974; VEXI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1974; NO 3; PP. 105-107; BIBL. 3 REF.Article

ROENTGENOGRAPHISCHE STRUKTURUNTERSUCHUNGEN DUENNER NICKELSCHICHTEN AUF SILIZIUMEINKRISTALLEN. = ETUDES PAR LES RAYONS X DE LA STRUCTURE DE COUCHES MINCES DE NICKEL SUR DES MONOCRISTAUX DE SILICIUMBECHERER G; MULLER H; VILBRANDT R et al.1974; EXPER. TECH. PHYS.; DTSCH.; DA. 1974; VOL. 22; NO 6; PP. 523-539; ABS. ANGL.; BIBL. 1 P.Article

DOUBLE-LAYER EPITAXIAL GROWTH OF SI AND B13P2 ON SI SUBSTRATES AND SOME ELECTRICAL PROPERTIES OF SI LAYERS.TAKENAKA T; SHOHNO K.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1211-1215; BIBL. 6 REF.Article

A REVIEW OF INFRARED SPECTROSCOPY STUDIES OF VAPOR-DEPOSITED DIELECTRIC GLASS FILMS ON SILICON.WONG J.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 5; NO 2; PP. 113-160; BIBL. 9 P.Article

CHANNELING EFFECT MEASUREMENTS OF THE RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI.CSEPREGI L; MAYER JW; SIGMON TW et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 2; PP. 157-158; BIBL. 7 REF.Article

PREPARATION AND PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED FROM THE SICL4-NH3 SYSTEM.POPOVA LI; SHEKERDJIISKI VJ; LASAROVA VB et al.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 6; PP. 609-615; ABS. BULG.; BIBL. 7 REF.Article

FORMATION DE TRICHITES ET DE COUCHES MINCES DE NITRURE DE ZIRCONIUM PAR DEPOT DE VAPEUR CHIMIQUETAKAHASHI T; ITOH H; NOGUCHI S et al.1975; NIPPON KAGAKU KAISHI; JAP.; DA. 1975; NO 4; PP. 627-631; ABS. ANGL.; BIBL. 16 REF.Article

GROWTH RATE ANISOTROPY AND MORPHOLOGY OF AUTOEPITAXIAL SILICON FILM FROM SICL4.VAN DEN BREXEL CHJ.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 4; PP. 259-266; BIBL. 37 REF.Article

HETERO-EPITAXIAL GROWTH OF BORON MONOPHOSPHITE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM.TAKIGAWA M; HIRAYAMA M; SHOHNO K et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 411-416; BIBL. 7 REF.Article

INFLUENCE DU SUPPORT SUR LA VITESSE DE CROISSANCE DES COUCHES MINCES DE NITRURE DE SILICIUMGURSKIJ LI; KOLESHKO VM; REZNIKOV BS et al.1974; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1974; NO 4; PP. 45-47; BIBL. 2 REF.Article

QUELQUES PARTICULARITES DE LA CROISSANCE DES COUCHES DE SICBETA SUR SI DANS LE CAS DU CHAUFFAGE PAR HAUTE FREQUENCEPROKOPOVICH IM; FELTYN IA.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 3; PP. 98-100; ABS. ANGL.; BIBL. 1 REF.Article

PIEZORESISTANCE AS THE SOURCE OF STRESS-INDUCED CHANGES IN CURRENT GAIN IN BIPOLAR TRANSISTORSMIKOSHIBA H; TOMITA Y.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 197-199; BIBL. 13 REF.Article

OPTIMISATION DES PROCEDES DE PRODUCTION DE STRUCTURES AUTOEPITAXIQUES DE SILICIUMILYUNIN OK; PETRENKO VR; MOVSHITS BI et al.1978; CVETN. METALLY; SUN; DA. 1978; NO 12; PP. 55-57; BIBL. 12 REF.Article

  • Page / 4931