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INFLUENCE OF OXYGEN IN AMBIENT GAS ON LPE GAAS LAYERS.KAN H; ISHII M; SUSAKI W et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL 1; PP. 461-464; BIBL. 8 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

LIQUID PHASE EPITAXIAL GROWTH OF ZN AND S DOPED GAASISHII M; TANAKA T; SUSAKI W et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 1; PP. 265-268; BIBL. 7 REF.Article

RECENT DEVELOPMENTS IN FIBER OPTIC DEVICESSHIRAHATA K; SUSAKI W; NAMIZAKI H et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 2; PP. 121-131; BIBL. 92 REF.Article

SPONTANEOUS EMISSION BEHAVIOR IN ALGAAS TJS LASERSNAMIZAKI H; KUMABE H; SUSAKI W et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 5; PP. 799-803; BIBL. 18 REF.Article

A NEW PCM AUDIO DISK PICKUP EMPLOYING A LASER DIODEOKADA K; KUBO T; SUSAKI W et al.1980; J. AUDIO ENGNG SOC.; USA; DA. 1980; VOL. 28; NO 6; PP. 429-432; BIBL. 1 REF.Article

HIGH-POWER-DENSITY SINGLE-MODE OPERATION OF GAAS-GAALAS TJS LASERS UTILIZING SI3N4 PLASMA DEPOSITION FOR FACET COATINGNAMIZAKI H; TAKAMIYA S; ISHII M et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3743-3745; BIBL. 14 REF.Article

CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article

HIGH TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS LASERKUMABE H; TANAKA T; NAMIZAKI H et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 38-39; BIBL. 11 REF.Article

A MONOLITHIC LINEAR ARRAY OF HIGH-RADIANCE ALGAAS DOUBLE HETEROSTRUCTURE LED'S WITH SELF-ALIGNED SPHERICAL LENSESHORIUCHI S; TANAKA T; IKEDA K et al.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 2; PP. 261-263; BIBL. 6 REF.Article

SUPPRESSION OF DEFECT FORMATION IN GAAS LAYERS BY REMOVING OXYGEN IN LPE.ISHII M; KAN H; SUSAKI W et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 6; PP. 375-377; BIBL. 9 REF.Article

INGAASP/INP MONOLITHIC PHOTODIODE ARRAYTAKAHASHI K; MUROTANI T; ISHII M et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; 18.1.1-18.1.4; BIBL. 3 REF.Conference Paper

EFFECTS OF ARSENIC PRESSURE ON GAAS HEAT-TREATED IN HYDROGENOHSAWA J; IKEDA K; TAKAHASHI K et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. L49-L51; BIBL. 8 REF.Article

A MONOLITHIC 1 X 10 ARRAY OF INGAASP/INP PHOTODIODES WITH SMALL DARK CURRENT AND UNIFORM RESPONSIVITIESTAKAHASHI K; MUROTANI T; ISHII M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 239-242; BIBL. 13 REF.Article

TJS LASER WITH BURIED P-REGION FOR TEMPERATURE CW OPERATIONOOMURA E; HIRANO R; TANAKA T et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 7; PP. 460-461; BIBL. 7 REF.Article

A NEW LED STRUCTURE WITH A SELF-ALIGNED SPHERE LENS FOR EFFICIENT COUPLING TO OPTICAL FIBERS.HORIUCHI S; IKEDA K; TANAKA T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 986-990; BIBL. 9 REF.Article

LONG LIVED SINGLE MODE JUNCTION-UP TJS LASERS BY IMPROVING ELECTRON INJECTION EFFICIENCYSUSAKI W; TAKAMIYA S; NAMIZAKI H et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 4.5.1-4.5.4; BIBL. 5 REF.Conference Paper

CHARACTERISTICS OF NARROW STRIPE GEOMETRY INGAASP/INP LASER DIODEOOMURA E; MUROTANI T; ISHII M et al.1981; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., SECT. E; ISSN 0387-236X; JPN; DA. 1981; VOL. 64; NO 1; PP. 7-12; BIBL. 25 REF.Article

IN GAASP/INP BURIED CRESCENT LASER EMITTING AT 1.3 MU M WITH VERY LOW THRESHOLD CURRENTMUROTANI T; OOMURA E; HIGUCHI H et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 566-568; BIBL. 8 REF.Article

TRANSVERSE MODE CONTROL IN INGAASP/INP BURIED CRESCENT DIODE LASERSOOMURA E; HIGUCHI H; HIRANO R et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 2; PP. 83-84; BIBL. 9 REF.Article

Optical functions of AlAsSb characterized by spectroscopic ellipsometryMOZUME, T; TANAKA, M; YOSHIMI, A et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 872-875, issn 1862-6300, 4 p.Conference Paper

A 780 nm high-power and highly reliable laser diode with a long cavity and a thin tapered-tickness active layerSHIMA, A; MATSUBARA, H; SUSAKI, W et al.IEEE journal of quantum electronics. 1990, Vol 26, Num 11, pp 1864-1872, issn 0018-9197Article

INTERNAL LASS OF INGAASP/INP BURIED CRESCENT (LAMBDA =1.3MU M) LASERHIGUCHI H; NAMIZAK; OOMURA E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 320-321; BIBL. 10 REF.Article

DEGRADATION MECHANISM IN 1.3 MU M INGAASP/INP BURIED CRESCENT LASER DIODE AT A HIGH TEMPERATUREOOMURA E; HIGUCHI H; HIRANO R et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 407-408; BIBL. 4 REF.Article

SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA EX IN 1.3 MU M IN GAASP DH LASERSNAMIZAKI H; HIRANO R; HIGUCHI H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 703-705; BIBL. 6 REF.Article

A dual-stripe phase-locked diode laserOHSAWA, J; IKEDA, K; TAKAHASHI, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 4, pp L230-L232, issn 0021-4922Article

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