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CMOS-Based Active Pixel for Low-Light-Level Detection : Analysis and MeasurementsFARAMARZPOUR, Naser; JAMAL DEEN, M; SHIRANI, Shahram et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 12, pp 3229-3237, issn 0018-9383, 9 p.Article

Formation and stability of Ni(Pt)Si/poly-Si layered structureSANTOS, Regis E; DOI, Ioshiaki; TEIXEIRA, Ricardo C et al.Proceedings - Electrochemical Society. 2004, pp 259-264, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Selective etching of polycrystalline silicon in a hexode type plasma etcherVIEIRA, Robson; MARTARELLO, Valter; MOSHKALYOV, Stanislav A et al.Proceedings - Electrochemical Society. 2004, pp 363-368, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

A comparative study of aluminum and tungsten silicon Schottky diodesDE SOUZA, Pablo R; SWART, Jacobus W; DINIZ, José A et al.Proceedings - Electrochemical Society. 2003, pp 166-172, issn 0161-6374, isbn 1-56677-389-X, 7 p.Conference Paper

Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon/thermal oxide/silicon structureTOQUETTI, Leandro Z; DOS SANTOS, Sebastiao G; DINIZ, José A et al.Proceedings - Electrochemical Society. 2004, pp 331-336, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Modeling and simulation of static characteristics of a PMOS compatible hot wire principle-based flow micro-sensorOLIVEIRA, Adeilton C; DOI, Ioshiaki; DINIZ, José A et al.Proceedings - Electrochemical Society. 2003, pp 437-444, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technologyPEREIRA, Marcus A; DINIZ, José A; DOI, Ioshiaki et al.Applied surface science. 2003, Vol 212-13, pp 388-392, issn 0169-4332, 5 p.Conference Paper

Formation of nickel silicides onto as-doped silicon using a thin Pt/Pd interlayerREIS, Ronaldo W; DOS SANTOS, Sebastiao G; DOI, Ioshiaki et al.Proceedings - Electrochemical Society. 2004, pp 357-362, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Uncooled thermal infrared detector for detection of far-infrared radiationNELI, Roberto R; DOI, Ioshiaki; MELO, Arline M et al.Proceedings - Electrochemical Society. 2004, pp 95-100, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Orientation-dependent anisotropic etching simulation in silicon waferNELI, Roberto R; DOI, Ioshiaki; RIBAS, Renato P et al.Proceedings - Electrochemical Society. 2003, pp 389-397, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

Control of micron and submicron feature dimensions in 2μm resolution photolithographic system for MOS and MEMS applicationsFIORAVANTE, Nemer P; MANERA, Leandro T; MOSHKALYOV, Stanislav A et al.Proceedings - Electrochemical Society. 2004, pp 369-374, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Characteristics of polycrystalline SI1-XGEX alloy deposited in a vertical LPCVD systemTEIXEIRA, Ricardo C; DOI, Ioshiaki; DINIZ, José A et al.Proceedings - Electrochemical Society. 2004, pp 307-311, issn 0161-6374, isbn 1-56677-416-0, 5 p.Conference Paper

Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayerREIS, Ronaldo W; DOS SANTOS, Sebastiao G; DOI, Ioshiaki et al.Proceedings - Electrochemical Society. 2003, pp 259-266, issn 0161-6374, isbn 1-56677-389-X, 8 p.Conference Paper

Advances in the process and in the methodology of emulsion optical masks constructionDE LARA, Daniel S; DE SARAIVA FERREIRA, Luiz Otavio; SWART, Jacobus W et al.Proceedings - Electrochemical Society. 2003, pp 371-379, issn 0161-6374, isbn 1-56677-389-X, 9 p.Conference Paper

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