THE NEED FOR COOPERATION AMONG LIBRARIES IN THE UNITED STATESSWARTZ RG.1975; LIBRARY TRENDS; U.S.A.; DA. 1975; VOL. 24; NO 2; PP. 215-227; BIBL. 1 P. 1/2Article

ON THE GENERATION OF HIGH-FREQUENCY ACOUSTIC ENERGY WITH POLYVINYLIDENE FLUORIDESWARTZ RG; PLUMMER JD.1980; IEEE TRANS. SONICS ULTRASON.; ISSN 0018-9537; USA; DA. 1980; VOL. 27; NO 6; PP. 295-303; BIBL. 18 REF.Article

MONOLITHIC SILICON-PVF₂ PIEZOELECTRIC ARRAYS FOR ULTRASONIC IMAGINGSWARTZ RG; PLUMMER JD.1980; ACOUST. IMAG.; USA; DA. 1980; VOL. 8; PP. 69-95; BIBL. 13 REF.Conference Paper

AN IMPROVED WEDGE-TYPE BACKING FOR PIEZOELECTRIC TRANSDUCERSSWARTZ RG; PLUMMER JD; MEINDL JD et al.1979; I.E.E.E. TRANS. SONICS ULTRASON.; USA; DA. 1979; VOL. 26; NO 2; PP. 140-142; BIBL. 3 REF.Article

A UHV-COMPATIBLE ROUND WAFER HEATER FOR SILICON MOLECULAR BEAM EPITAXYFINEGAN SN; SWARTZ RG; MCFEE JH et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 2; PP. 497-500; BIBL. 5 REF.Article

A QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXYMCFEE JH; SWARTZ RG; ARCHER VD et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 214-216; BIBL. 9 REF.Article

AN INTEGRATED CIRCUIT FOR MULTIPLEXING AND DRIVING INJECTION LASERSSWARTZ RG; WOOLEY BA; VOSHCHENKOV AM et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 753-760; BIBL. 6 REF.Article

TWO DIMENSIONAL TRANSMIT/RECEIVE CERAMIC PIEZOELECTRIC ARRAYS: CONSTRUCTION AND PERFORMANCEPLUMMER JD; SWARTZ RG; MAGINNESS MG et al.1978; I.E.E.E. TRANS. SONICS ULTRASON.; USA; DA. 1978; VOL. 25; NO 5; PP. 273-280; BIBL. 23 REF.Article

A TECHNIQUE FOR RAPIDLY ALTERNATING BORON AND ARSENIC DOPING IN ION-IMPLANTED SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSHCHENKOV AW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 239-241; BIBL. 4 REF.Article

AN UNCOMPENSATED SILICON BIPOLAR JUNCTION TRANSISTOR FABRICATED USING MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; GRABBE P et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 293-295; BIBL. 4 REF.Article

IN-SITU LOW ENERGY BF₂⁺ ION DOPING FOR SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSCHENKOV AM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 138-140; BIBL. 11 REF.Article

BURIED CHANNEL MOSFET'S WITH GATE LENGTHS FROM 2.5 MU M TO 700 AHOWARD RE; JACKEL LD; SWARTZ RG et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 10; PP. 322-324; BIBL. 10 REF.Article