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ANALYSE DES CARACTERISTIQUES DE LA DIODE DE COMMUTATION DES CELLULES DE LA MATRICE PHOTORECEPTRICEBUDARNYKH VI; KRASNOV VF; TUROVSKIJ LA et al.1976; AVTOMETRIJA; S.S.S.R.; DA. 1976; NO 4; PP. 109-112; BIBL. 2 REF.Article

DEVICES AND CIRCUITS FOR BIPOLAR (V) LSILOHSTROH J.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 51-73; BIBL. 2 P.Conference Paper

TRANSFORMATION FROM OHMIC TO OFFSET BEHAVIOR FOR THE ON STATE OF AN AMORPHOUS SEMICONDUCTOR THRESHOLD SWITCH FOR INTERRUPTIONS GREATER THAN 12 NSVEZZOLI GC.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 288-290; BIBL. 8 REF.Article

THERMALLY INDUCED SWITCHING AND FAILURE IN P-I-N RF CONTROL DIODESCHAFFIN RJ.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 11; PP. 1944-1947; BIBL. 2 REF.Article

COMMENT CHOISIR UNE DIODE RAPIDE.PETER JM; MAURICE B.1977; CAH. TECH. SESCOSEM-INFORM.; FR.; DA. 1977; NO 5; PP. 16-20; BIBL. 5 REF.Article

LOW-LOSS HIGH-SPEED POWER DIODES.MATSUZAKI H; KARIYA T; SAKURADA S et al.1978; HITACHI REV.; JAP.; DA. 1978; VOL. 27; NO 2; PP. 103-106; BIBL. 1 REF.Article

SEMICONDUCTOR DIODES FOR RF APPLICATIONS.HOWARD NR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 598; PP. 68-69Article

A NEW IMPEDANCE-TRANSFORMATION PROPERTY AND ITS APPLICATIONS TO SWITCHING-DIODE Q-FACTOR MEASUREMENTS.MORAWSKI T.1977; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1977; VOL. 5; NO 2; PP. 135-138; BIBL. 8 REF.Article

COURANT INVERSE DANS LES DIODES IMPULSIONNELLES DE PUISSANCE AVEC UNE ISOLATION MAGNETIQUEBUGAEV SP; KIM AA; KOSHELEV VI et al.1979; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 8; PP. 1659-1661; BIBL. 5 REF.Article

A simple method for investigating charge storage effect in MIS switching diodesPHAN, H. K; BINH, P. H; PHU, L. H et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp K81-K84, issn 0031-8965Article

SOLID STATE DEVICES TRANSISTORS AND OTHER DEVICES1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 657-687; BIBL. DISSEM.Conference Paper

POWER SEMICONDUCTOR DEVICES: A STATUS REVIEWPELLY BR.1982; INTERNATIONAL SEMICONDUCTOR POWER CONVERTER CONFERENCE/1982-05-24/ORLANDO FL; USA; NEW YORK: IEEE; DA. 1982; PP. 1-9Conference Paper

FACTORS DETERMINING FORWARD VOLTAGE DROP IN THE FIELD-TERMINATED DIODE (FTD)ADLER MS.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 5; PP. 529-537; BIBL. 11 REF.Article

MISE AU POINT D'UNE METHODE DE MESURE DU TEMPS DE VIE DANS LA BASE DE DIODES RAPIDES OU DE COMMUTATION ET LES TRANSISTORSBIELLE DASPET D; PINEL J; BENZOHRA M et al.1975; DGRST-7371361; FR.; DA. 1975; PP. (23P.); H.T. 1; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

A TWO-PHASE SHIFT REGISTER USING SI TUNNEL MIS SWITCHING DIODESKAWAMURA K; YAMAMOTO T.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1078-1083; BIBL. 19 REF.Article

Theory of quasi-diode operation of reversely switched dinistorsGORBATYUK, A. V; GREKHOV, I. V; NALIVKIN, A. V et al.Solid-state electronics. 1988, Vol 31, Num 10, pp 1483-1491, issn 0038-1101Article

High-current, low-forward-drop JBS power rectifiersCHANG, H.-R; BALIGA, B. J.Solid-state electronics. 1986, Vol 29, Num 3, pp 359-363, issn 0038-1101Article

Novel switch-parallel current commutation scheme for DC chopper with minimum energy lossDE, G; MOHIYADEEN, M. S.International journal of electronics. 1987, Vol 63, Num 5, pp 789-800, issn 0020-7217Article

Computation of resonant frequency of annular microstrip antenna loaded with multiple shorting postsMAHAJAN, M; KHAH, S. K; CHAKARVARTY, T et al.IET microwaves, antennas & propagation (Print). 2008, Vol 2, Num 1, pp 1-5, issn 1751-8725, 5 p.Article

Non-destructive testing technique for MOSFET's characterisation during soft-switching ZVS operationsIANNUZZO, Francesco.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1738-1741, issn 0026-2714, 4 p.Conference Paper

Photocurrent characteristics of ferrocene/flavin/viologen/TCNQ heterojunctionKYUNG SANG CHO; CHOI, J.-W; WON HONG LEE et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1999, Vol 327, pp 275-278, issn 1058-725XConference Paper

On the source of current-carrying filament material in MIM-diodesBIEDERMAN, H; LEHMBERG, H; PAGNIA, H et al.Vacuum. 1989, Vol 39, Num 1, pp 27-28, issn 0042-207XConference Paper

Charging units for split capacitive storesGROMOVENKO, V. M; OPRE, V. M; SHCHEGOLEVA, N. A et al.Russian electrical engineering. 1997, Vol 68, Num 3, pp 70-75, issn 1068-3712Article

Electrical characteristics and simulations of self-switching-diodes in SOI technologyFARHI, G; SARACCO, E; BEERENS, J et al.Solid-state electronics. 2007, Vol 51, Num 9, pp 1245-1249, issn 0038-1101, 5 p.Article

Current SiC technology for power electronic devices beyond SiMATSUNAMI, H.Microelectronic engineering. 2006, Vol 83, Num 1, pp 2-4, issn 0167-9317, 3 p.Conference Paper

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