au.\*:("SYHRE H")
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ZUM EINBAU VON KALZIUMIONEN IN DIE GLASOBERFLAECHE BEIM K/NA-IONENAUSTAUSCH = L'INTRODUCTION D'IONS CALCIUM DANS LA SURFACE DE VERRE LORS DE L'ECHANGE K/NAKOLITSCH A; RICHTER E; SYHRE H et al.1981; SILIKATTECHNIK; ISSN 0037-5233; DDR; DA. 1981; VOL. 32; NO 4; PP. 115-116; BIBL. 7 REF.Article
Rapid thermal annealing of arsenic-ion implanted layers in silicon investigated by electrochemical capacitance-voltage measurementsSIEBER, N; OTTO, G; SYHRE, H et al.Physica status solidi. A. Applied research. 1992, Vol 132, Num 1, pp 177-182, issn 0031-8965Article
Influence of flash-lamp annealing on the diffusion behaviour of ion implanted boron profiles = Einfluss des Blitzlampengluehens auf das Diffusionsverhalten ionenimplantierter BorprofileWIESER, E; SYHRE, H; RUEDENAUER, F.G et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 247-252, issn 0031-8965Article
Dose dependence of the flash lamp annealing of arsenic-implanted siliconPANKNIN, D; WIESER, E; KLABES, R et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 553-559, issn 0031-8965Article
Influence of flash-lamp annealing on the diffusion behaviour of ion implanted boron profilesWIESER, E; SYHRE, H; RÜDENAUER, F. G et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 247-252, issn 0031-8965Article
A study of the compositional structure and electrical behaviour of thin silicon oxynitride layers prepared by rapid thermal processingBEYER, R; BURGHARDT, H; PRÖSCH, G et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 447-452, issn 0031-8965Article