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kw.\*:("SYSTEME ARSENIC GERMANIUM TELLURE")

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Results 1 to 25 of 53

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EFFET DU MECANISME DE TRANSITION DE PHASE SUR LA FIABILITE DE COMMUTATEURS AMORPHES DE CHALCOGENURESALADINSKIJ VK; GORELKINA EN; SOLYAR VG et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 170-172; BIBL. 7 REF.Article

DIELECTRIC PROPERTIES OF GLASSY AS10TE75GE15.SRIVASTAVA KK; GOYAL DR; KUMAR A et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 323-329; ABS. ALLEM.; BIBL. 8 REF.Article

ON THE RELIABILITY OF AMORPHOUS CHALCOGENIDE SWITCHING DEVICESSCHUOCKER D; RIEDER G.1978; J. NON-CRYST. SOLIDS; NLD; DA. 1978; VOL. 29; NO 3; PP. 397-407; BIBL. 16 REF.Article

AC CONDUCTIVITY OF (AS2TE3)95GE5.LE CLEAC'H X; PALMIER JF.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 2; PP. 265-274; BIBL. 26 REF.Article

HALL EFFECT IN ELECTRICALLY SWITCHED MEMORY STATE OF TE81GE15AS4SOTIROPOULOS J; ROILOS M.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 31; NO 10; PP. 721-724; BIBL. 9 REF.Article

LOW-TEMPERATURE SPECIFIC HEAT OF AMORPHOUS AND CRYSTALLINE TE0.81GE0.15AS0.04.JIRMANUS M; GERBER JA; SAMPLE HH et al.1978; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1978; VOL. 27; NO 1; PP. 1-8; BIBL. 18 REF.Article

SOME CERTAIN PROPERTIES OF AMORPHOUS SEMICONDUCTORS.SAKR EM; KUCIREK J.1977; SCRIPTA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1977; VOL. 7; NO 10; PP. 41-62; BIBL. 40 REF.Article

A STUDY OF SWITCHING EFFECTS IN THIN FILMS OF GE-AS-TE CHALCOGENIDE GLASS.SHAHA BM; JAHAGIRDAR SB; ALKA KAMAT et al.1976; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1976; VOL. 14; NO 12; PP. 968-970; BIBL. 7 REF.Article

INFLUENCE D'ADDITIONS D'ELEMENTS DES GROUPES III-V SUR LES CARACTERISTIQUES V-A DES VERRES DU SYSTEME AS-TE-GEYASHENKOVA LN; NOVOSELOVA SK; BORISOVA ZU et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 7; PP. 1192-1195; BIBL. 7 REF.Article

INJECTION LASER WRITING ON CHALCOGENIDE FILMS.SMITH AW.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 4; PP. 795-798; BIBL. 13 REF.Article

ELECTRICAL PROPERTIES OF TE-AS-GE FILMS.AMMAR AA; HAFIZ MM; HAMMAD FH et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 35; NO 2; PP. 221-227; BIBL. 10 REF.Article

ERRORS DUE TO LACK OF CONTACT IN MEASUREMENTS OF DIELECTRIC RELAXATION PARAMETERS FOR SOLID POWDERSGOYAL DR; WALKER S; SRIVASTAVA KK et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 1; PP. 351-357; ABS. GER; BIBL. 23 REF.Article

VISUAL EFFECTS OF SWITCHING IN 0.15 AS-0.12 GE-0.73 TE GLASS.ECKELS DE; SIDLES PH; DANIELSON GC et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 3005-3008; BIBL. 18 REF.Article

Comments on the formation process and the electrical nature of lock-on filament in Ge09As20Te71 glassHARO, M; MARQUEZ, E; ESQUIVIAS, L et al.Journal of non-crystalline solids. 1986, Vol 81, Num 1-2, pp 255-259, issn 0022-3093Article

Formation et comportement thermique des verres dans le système As-Ge-Te. Relations avec le diagramme de phases ― mise en évidence d'une séparation sub-liquidus de phases vitreuses = Formation and thermal behaviour of glasses in the As-Ge-Te system. Relations with the phase diagram. Observation of a sub-liquidus separation of glass phasesOLLITRAULT-FICHET, R; HAN WAN SHU; RIVET, J et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 351-361, issn 0025-5408Article

The formation process and the electrical nature of the lock-on filament in Ge0,09As0,20Te0,71 glassMARQUEZ, E; VILLARES, P; JIMENEZ-GARAY, R et al.Materials letters (General ed.). 1985, Vol 3, Num 12, pp 503-507, issn 0167-577XArticle

Vitrification et vitesses critiques de refroidissement dans le système As-Ge-TeMIKHAJLOV, M. D; TVER'YANOVICH, A. S; VADRYSHNIKOVA, V. N et al.Fizika i himiâ stekla. 1988, Vol 14, Num 3, pp 377-380, issn 0132-6651Article

Determination of kinetic parameters of crystallization and study of glass forming ability for alloys in the Ge-As-Te amorphous systemLIGERO, R. A; VAZQUEZ, J; VILLIARES, P et al.Materials letters (General ed.). 1989, Vol 8, Num 1-2, pp 6-11, issn 0167-577XArticle

ELECTRICAL CONTACT PROPERTIES OF SEMICONDUCTING CHALCOGENIDE GLASSESWALLACE AM; OWEN AE; ROBERTSON JM et al.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 1; PP. 57-70; BIBL. 23 REF.Article

CONDUCTIVITY & SWITCHING CHARACTERISTICS OF GLASSY ALLOY AS10GE15TE75.GOYAL DR; PANWAR OS; SRIVASTAVA KK et al.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 1; PP. 10-13; BIBL. 15 REF.Article

UNTERSUCHUNGEN ZUM HALBLEITER-METALL-UEBERGANG VON SCHMELZEN IM SYSTEM GE-AS-TE. I. ELEKTRISCHE LEITFAEHIGKEIT. = ETUDE DE LA TRANSITION SEMICONDUCTEUR-METAL DE LIQUIDES DU SYSTEME GE-AS-TE. I. CONDUCTIVITE ELECTRIQUESCHNURNBERGER W; THURN H; KREBS H et al.1976; BER. BUNSENGESELLSCH. PHYS. CHIM.; DTSCH.; DA. 1976; VOL. 80; NO 8; PP. 730-735; ABS. ANGL.; BIBL. 24 REF.Article

LOW-TEMPERATURE AC CONDUCTIVITY OF CHALCOGENIDE GLASSESHAUSER JJ.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 23; PP. 1534-1537; BIBL. 18 REF.Article

THERMOELECTRIC POWER OF SI-AS-TE AND GE-AS-TE GLASSES.TOHGE N; MINAMI T; TANAKA M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 6; PP. 977-979; BIBL. 10 REF.Article

EFFECTS OF PRESSURE ON THE ELECTRICAL CONDUCTIVITY OF CHALCOGENIDE GLASSES.JOHNSON RT JR; QUINN RK.1978; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1978; VOL. 28; NO 2; PP. 273-291; BIBL. 30 REF.Article

ELECTRICAL CONDUCTIVITY & DIELECTRIC CONSTANT OF SEMICONDUCTING GLASSES: AS-GE-TE & SE-GE-TE ALLOY SYSTEMSKUMAR A; LAKSHMINARAYAN KN; SRIVASTAVA KK et al.1980; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1980; VOL. 18; NO 5; PP. 318-323; BIBL. 25 REF.Article

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