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OPTICAL, MAGNETIC AND TRANSPORT PROPERTIES OF THE AS-S-TE SYSTEMKOSEK F; CIMPL Z; HLADINA R et al.1980; J. NON-CRYST. SOLIDS; NLD; DA. 1980; VOL. 37; NO 1; PP. 31-35; BIBL. 12 REF.Article

THE THERMAL CONDUCTIVITY OF SEMICONDUCTORS OF THE SYSTEM AS₂(SE_1-XTE_X)₃ DEPENDING ON TEMPERATURE AND PRESSUREAMIRKHANOV KH I; MAGOMEDOV YA V; ISMAILOV SH M et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 361-366; ABS. RUS; BIBL. 14 REF.Article

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A HIGHLY SENSITIVE CHALCOGENIDE PHOTOCONDUCTOR IN A NEAR-INFRARED WAVELENGTH REGIONTANIGUCHI Y; YAMAMOTO H; HORIGOME S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7261-7269; BIBL. 8 REF.Article

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ON POSSIBLE BINARY MOLECULAR STRUCTURE IN THE ASTESE AMORPHOUS SYSTEM.MACKOWSKI JM; SAMUELI JJ; KUMURDJIAN P et al.1974; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1974; VOL. 15; NO 2; PP. 279-288; BIBL. 15 REF.Article

DIFFUSION OF SILVER ASSOCIATED WITH PHOTODOPING INTO AMORPHOUS CHALCOGENIDESYAMAGUCHI M; SHIMIZU I; INOUE E et al.1982; JOURNAL OF NON-CRYSTALLINE SOLIDS; ISSN 0022-3093; NLD; DA. 1982; VOL. 47; NO 3; PP. 341-354; BIBL. 17 REF.Article

EFFECT OF GAMMA -RADIATION ON THE ELECTRICAL PROPERTIES OF BULK AMORPHOUS AS₄SE₂TE₄EL FOULY MH; EL BEHAY AZ; FAYEK SA et al.1982; RADIAT. PHYS. CHEM.; ISSN 0146-5724; USA; DA. 1982; VOL. 19; NO 1; PP. 57-61; BIBL. 9 REF.Article

Vitesses critiques de refroidissement de quelques chalcogénures fondus donnant des verresMIKHAJLOV, M. D; TVER'YANOVICH, A. S.Fizika i himiâ stekla. 1986, Vol 12, Num 3, pp 274-284, issn 0132-6651Article

Chalcogenide amorphous semiconductor diodesOKANO, S; SUZUKI, M; IMURA, T et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L445-L448, issn 0021-4922Article

Effect of γ-irradiation on non-linear I-V behaviour and thermoelectric measurements in amorphous semiconducting As-Se-Te systemZOPE, M. J; LOPE, J. K.Journal of non-crystalline solids. 1985, Vol 74, Num 1, pp 47-55, issn 0022-3093Article

Molecular structure of (As₂Se₃)_x(As₂Te₃)_1-x glasses: chemical equivalence of ¹²⁵Te absorption and ¹²⁹I emission Mössbauer spectroscopyWELLS, J; BOOLCHAND, P.Journal of non-crystalline solids. 1987, Vol 89, Num 1-2, pp 31-46, issn 0022-3093Article

Radiation and thermal-induced defects in amorphous As₄Se₃Te₃KOTKATA, M. F; EL-FOULY, M. H; MORSY, M. A et al.Physica scripta (Print). 1984, Vol 29, Num 5, pp 508-511, issn 0031-8949Article

Switching electrical power of bulk chalcogenide glassy semiconductorsMARQUEZ, E; JIMENEZ-GARAY, R; ALEGRIA, A et al.Journal of materials science letters. 1987, Vol 6, Num 7, pp 823-825, issn 0261-8028Article

Structural characteristics and some concepts related to switching properties in As_0.45Se_0.10Te_0.45 glassy alloyVAZQUEZ, J; MARQUEZ, E; VILLARES, P et al.Materials letters (General ed.). 1986, Vol 4, Num 8-9, pp 360-364, issn 0167-577XArticle

INFLUENCE DE L'ELECTRODIFFUSION DE L'ARGENT SUR LES CARACTERISTIQUES VOLT-AMPERE DE VERRES DE CHALCOGENURESBORISOVA ZU; VADOV GI; MIKHAJLOV MD et al.1977; FIZ. KHIM. STEKLA; S.S.S.R.; DA. 1977; VOL. 3; NO 1; PP. 33-36; BIBL. 7 REF.Article

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DC and AC electrical transport in AsSeTe systemsEL-DEN, M. B; OLSEN, N. B; PEDERSEN, I. H et al.Journal of non-crystalline solids. 1987, Vol 92, Num 1, pp 20-30, issn 0022-3093Article

Structural models for semiconductor As_0.20Se_0.50Te_0.30 glass alloy by X-ray diffractionVAZQUEZ, J; VILLARES, P; JIMENEZ-GARAY, R et al.Journal of non-crystalline solids. 1986, Vol 86, Num 1-2, pp 251-260, issn 0022-3093Article