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Results 1 to 25 of 155

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CHEMICAL SHIFTS OF THE K-ABSORPTION DISCONTINUITIES OF GERMANIUM AND SELENIUM IN SOME AMORPHOUS SYSTEMSRAO YL; CHOURASIA AR; MANDE C et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 46; NO 1; PP. 13-19; BIBL. 15 REF.Article

PHOTOLUMINESCENCE IN DOPED AND ANNEALED GESE2 GLASSKOOS M; KOSA SOMOGYI I; VASSILYEV VA et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 43; NO 2; PP. 245-253; BIBL. 19 REF.Article

RAMAN STUDY OF EVAPORATED AND SPUTTERED GEXSE1-X GLASS FILMSGRIFFITHS JE; SINCLAIR WR.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 551-553; BIBL. 14 REF.Article

MORPHOLOGY OF AMORPHOUS SEMICONDUCTORSPHILLIPS JC.1980; COMMENTS SOLID STATE PHYS.; GBR; DA. 1980; VOL. 9; NO 6; PP. 191-196; BIBL. 8 REF.Article

PHOTOLUMINESCENCE IN POWDERED AND BULK GLASSY GESE2KOOS M; VASSILYEV VA; SOMOGYI IK et al.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 41; NO 4; PP. 383-391; BIBL. 15 REF.Article

CONDUCTIVITE ELECTRIQUE DES COMPOSES VITREUX DU SYSTEME GERMANIUM-SELENIUMAVETIKYAN GB; BORISOVA ZU.1974; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1974; VOL. 47; NO 11; PP. 2443-2447; BIBL. 17 REF.Article

BROKEN CHEMICAL ORDER AND PHASE SEPARATION IN GEXSE1-X GLASSESBOOLCHAND P; GROTHAUS J; PHILLIPS JC et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 2; PP. 183-185; BIBL. 21 REF.Article

PHOTOCONDUCTION IN METAL-DOPED GEYSE1-Y GLASSESCHAMBERLAIN JM; MOSELEY AJ.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 13-17; BIBL. 12 REF.Article

STRUCTURAL ORIGIN OF BROKEN CHEMICAL ORDER IN A GESE2 GLASSBOOLCHAND P; GROTHAUS J; BRESSER WJ et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2975-2978; BIBL. 19 REF.Article

DARK VOLTAIC EFFECTS IN CATHODIC SPUTTERED GESE FILMSPETROVA V; ANDREICHIN R.1980; DOKL. BOLG. AKAD. NAUK; BGR; DA. 1980; VOL. 33; NO 5; PP. 615-618; BIBL. 6 REF.Article

LONG-TERM PHOTOLUMINESCENCE FATIGUE IN GEYSE1-Y GLASSESCHAMBERLAIN JM; MOSELEY AJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 10; PP. 1987-1998; BIBL. 14 REF.Article

TEMPERATURE DEPENDENCES OF ELECTRIC CONDUCTIVITY IN SE-GE AMORPHOUS SYSTEMS NEAR TG POINT AT 10 GHZPAVLUS I.1979; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1979; VOL. 29; NO 11; PP. 1309-1312; BIBL. 9 REF.Article

THE HEAT CAPACITIES OF ARSENIC, PHOSPHOROUS AND GEXSE1-X GLASSES BELOW 1 KJONES DP; PHILLIPS WA; LASJAUNIAS JC et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 3; PP. 255-258; BIBL. 25 REF.Article

PROCESSUS PHOTOSTIMULES DANS LES CHALCOGENURES D'ARSENIC ET DE GERMANIUM VITREUXKOLOBOV AV; KOLOMIETS BT; LYUBIN VM et al.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 4; PP. 1062-1067; BIBL. 15 REF.Article

DIRECT OBSERVATIONS OF COLUMNAR STRUCTURE IN GLASSY-GESE2 FILMS BY ELECTRON MICROSCOPYCHEN CH.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 44; NO 2-3; PP. 391-395; BIBL. 8 REF.Article

OPTICAL CHANGES IN AMORPHOUS CHALCOGENIDESBHAT PK.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 43; NO 2; PP. 297-299; BIBL. 2 REF.Article

OPTICAL SPECTRA AND ELECTRONIC STRUCTURE OF CRYSTALLINE AND GLASSY GE(S,SE)2ASPNES DE; PHILLIPS JC; TAI KL et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 816-822; BIBL. 28 REF.Article

EPR STUDY OF MN2+ IN CHALCOGEN-RICH GE-SE GLASSESDURNY R.1980; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1980; VOL. 41; NO 2; PP. 273-278; BIBL. 23 REF.Article

PREPARATION OF AMORPHOUS LAYERS OF GE4SE5TE AND THEIR ELECTRICAL PROPERTIESFELTZ A; KAPS C; SCHIRRMEISTER F et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. 175-180; BIBL. 7 REF.Article

NEGATIVE MAGNETORESISTANCE OF AN AMORPHOUS SE-TE-GE SAMPLESMEHRA RM; RADHEY SHYAM; MATHUR PC et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. K165-K169; BIBL. 22 REF.Article

VISCOSITY OF THE GLASS-FORMING GE-SE LIQUID SOLUTIONS.LAUGIER A; CHAUSSEMY G; FORNAZERO J et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 419-429; BIBL. 22 REF.Article

PROPRIETES ELECTRIQUES ET DIELECTRIQUES DES VERRES GEXSE1-X.DELORME E; TRONC P; BENSOUSSAN M et al.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 6; PP. 949-954; ABS. ANGL.; BIBL. 11 REF.Article

INFRARED STUDIES OF SE-BASED POLYNARY CHALCOGENIDE GLASSES. II. YXZXSE100-2X (Y=GE,AS; Z=AS,TE).OHSAKA T.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 89-96; BIBL. 12 REF.Article

PHOTOCONDUCTIVITY AND RECOMBINATION PROCESSES IN GEXSE1-X GLASSESKIM GI; SHIRAFUJI J; INUISHI Y et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 15; PP. 3431-3440; BIBL. 18 REF.Article

LASER-INDUCED PHASE TRANSITION IN AMORPHOUS GESE2 FILMSFAZEKAS P.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 4; PP. 435-452; BIBL. 38 REF.Article

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