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CHARGE CARRIER TRANSPORT MECHANISM IN AMORPHOUS LAYERS OF THE COMPOSITION GE4SE5TEFELTZ A; SCHIRRMEISTER F.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 2; PP. 591-599; ABS. GER; BIBL. 32 REF.Article

CHEMICAL SHIFTS OF THE K-ABSORPTION DISCONTINUITIES OF GERMANIUM AND SELENIUM IN SOME AMORPHOUS SYSTEMSRAO YL; CHOURASIA AR; MANDE C et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 46; NO 1; PP. 13-19; BIBL. 15 REF.Article

PREPARATION OF AMORPHOUS LAYERS OF GE4SE5TE AND THEIR ELECTRICAL PROPERTIESFELTZ A; KAPS C; SCHIRRMEISTER F et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. 175-180; BIBL. 7 REF.Article

NEGATIVE MAGNETORESISTANCE OF AN AMORPHOUS SE-TE-GE SAMPLESMEHRA RM; RADHEY SHYAM; MATHUR PC et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. K165-K169; BIBL. 22 REF.Article

INFRARED STUDIES OF SE-BASED POLYNARY CHALCOGENIDE GLASSES. II. YXZXSE100-2X (Y=GE,AS; Z=AS,TE).OHSAKA T.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 89-96; BIBL. 12 REF.Article

A modelization of the specific heat in the glass transition range for glassy alloysAHAROUNE, A; KUHNAST, F. A; CUNAT, C et al.Journal of non-crystalline solids. 1993, Vol 156-58, pp 523-526, issn 0022-3093, 2Conference Paper

PROPERTIES OF GE-SE-TE GLASSESWIEDER J; ARONSON S.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 33; NO 3; PP. 405-409; BIBL. 7 REF.Article

EFFECT OF HEAT TREATMENT ON THE CONDUCTION AND STRUCTURE OF GE-SE-TE AMORPHOUS ALLOYSHAFIZ MM; AMMAR AA; AL ADL AI et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 319-325; ABS. GER; BIBL. 23 REF.Article

STUDIES OF AMORPHOUS GE-SE-TE ALLOYS(II) : THERMAL CRYSTALLIZATION OF SPUTTERED GE20SE40TE40.SARRACH DJ; DENEUFVILLE JP; HAWORTH WL et al.1978; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1978; VOL. 27; NO 2; PP. 193-208; BIBL. 16 REF.Article

ELECTRICAL CONDUCTIVITY & DIELECTRIC CONSTANT OF SEMICONDUCTING GLASSES: AS-GE-TE & SE-GE-TE ALLOY SYSTEMSKUMAR A; LAKSHMINARAYAN KN; SRIVASTAVA KK et al.1980; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1980; VOL. 18; NO 5; PP. 318-323; BIBL. 25 REF.Article

CONDUCTIVITE ELECTRIQUE DES VERRES DU SYSTEME GE-SE-TE DANS UN LARGE INTERVALLE DE TEMPERATURESPAZIN AV; GLUSHKOV ED.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 7; PP. 1194-1198; BIBL. 7 REF.Article

DIELECTRIC RELAXATION STUDY OF CHALCOGENIDE GLASSESSRIVASTAVA KK; KUMAR A; PANWAR OS et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 33; NO 2; PP. 205-224; BIBL. 21 REF.Article

ELECTRICAL TRANSPORT IN BULK AMORPHOUS SE, SE-TE, SE-SB, AND SE-TE-GEMEHRA RM; SHYAM R; MATHUR PC et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 12; PP. 6525-6531; BIBL. 29 REF.Article

Glass formation and structure of chalcogenide systems. XXX: Interpretation of the different conductivity of bulk and thin film chalcogenide glasses in the system Ge4Se6-xTexKAHNT, H; FELTZ, A.Journal of non-crystalline solids. 1986, Vol 86, Num 1-2, pp 41-47, issn 0022-3093Article

Time-of-flight study of chalcogenide glasses chemically modified by bismuthTOHGE, N; YONESAKI, T; MINAMI, T et al.Journal of applied physics. 1985, Vol 58, Num 11, pp 4225-4229, issn 0021-8979Article

Low-loss Te-based chalcogenide glass optical fibersKATSUYAMA, T; MATSUMURA, H.Applied physics letters. 1986, Vol 49, Num 1, pp 22-23, issn 0003-6951Article

Characterization of Ge-Se-Te glasses by emanation thermal analysis and DTABORDAS, S; CLAVAGUERA-MORA, M. T; BALEK, V et al.Thermochimica acta. 1985, Vol 93, pp 263-266, issn 0040-6031Article

Glass formation and crystallization in the GeSe2-Sb2Te3 systemSURINACH, S; BARO, M. D; CLAVAGUERA-MORA, M. T et al.Journal of materials science. 1984, Vol 19, Num 9, pp 3005-3012, issn 0022-2461Article

Spectres Mössbauer et ordre à petite distance des verres de chalcogénures dopés par le ferBYCHKOV, E. A; BORISOVA, Z. U; VLASOV, YU. G et al.Fizika i himiâ stekla. 1984, Vol 10, Num 3, pp 278-288, issn 0132-6651Article

On the application of the ordinary and photoconductivity Meyer-Neldel rule to amorphous Ge30Se60Te10 filmsKLUGE, G; SCHMAL, J.Physica status solidi. A. Applied research. 1988, Vol 106, Num 1, pp K47-K52, issn 0031-8965Article

The glass forming region in and some thermal and infrared transmittance properties of glasses of the Ge-Se-Te-Tl systemNISHII, J; KAITE, Y; YAMAGISHI, T et al.Physics and chemistry of glasses. 1987, Vol 28, Num 2, pp 55-58, issn 0031-9090Article

Effects of transition metal additives on electronic properties in amorphous GeSeTe filmsWATANABE, I; NOGUCHI, S; SHIMIZU, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 4, pp 575-579, issn 0021-4922Article

Glass formation and structure of chalcogenide systems. XXIX: Influence of the preparation technique on the conductivity of amorphous chalcogenides in the system Ge4Se6-xTexKAHNT, H; FELTZ, A.Journal of non-crystalline solids. 1986, Vol 86, Num 1-2, pp 33-40, issn 0022-3093Article

Electrode effects on the electrical properties of chalcogenide filmsHAFIZ, M. M; AFIFY, N.Journal of non-crystalline solids. 1983, Vol 57, Num 3, pp 431-441, issn 0022-3093Article

Oxide impurity absorptions in Ge-Se-Te glass fibresNISHII, J; YAMASHITA, T; YAMAGISHI, T et al.Journal of materials science. 1989, Vol 24, Num 12, pp 4293-4297, issn 0022-2461Article

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