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CERTAINES PARTICULARITES DE LA FORMATION DES ALLIAGES DE TELLURE ET DE GERMANIUM AMORPHESPSAREV VI; IVANOV AL.1982; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 10; PP. 2576-2577; BIBL. 5 REF.Article

ETUDE DE LA SUSCEPTIBILITE MAGNETIQUE DES VERRES DES SYSTEMES BINAIRES ARSENIC-TELLURE ET GERMANIUM-TELLUREBAJDAKOV LA; LANUS VR; SOMOVA VG et al.1974; VEST. LENINGRAD. UNIV.; S.S.S.R.; DA. 1974; NO 10; PP. 119-122; ABS. ANGL.; BIBL. 10 REF.Article

PHOTOCONDUCTIVITY OF SEMICONDUCTING GLASSES TE85 GE15 AND TE85GE10SB5IGALSON M; TRYKOZKO R.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 2; PP. 99-101; BIBL. 7 REF.Article

ANNIHILATION DE POSITONS DANS LES MATERIAUX CRISTALLINS ET VITREUX DES SYSTEMES TERNAIRES TL-GE-TE ET TL-SI-TEAREF'EV KP; PROKOP'EV EP; STARODUBOV VG et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 1904-1907; BIBL. 12 REF.Article

ETUDE DE LA DIFFUSION DE L'OR DANS LE VERRE SEMICONDUCTEUR GETE4 EN COUCHES MINCES PAR LES METHODES NUCLEAIRES = STUDY OF THE DIFFUSION OF GOLD IN THIN LAYERS OF THE SEMICONDUCTOR GLASS GETE4 BY NUCLEAR METHODSBENDALI MUSTAPHA.1981; ; FRA; DA. 1981; 94 P.; 30 CM; ABS. ENG; BIBL. 61 REF.; TH. 3E CYCLE: PHYS. NUCL./LYON 1/1981/1061Thesis

ON THE STRUCTURE OF AMORPHOUS GEXTE1-X SYSTEMS.KAMNA AGGARWAL; MENDIRATTA RG; RAJ KAMAL et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 3; PP. 357-361; BIBL. 11 REF.Article

ELECTRICAL CONDUCTIVITY OF GE-TE GLASSES UNDER HYDROSTATIC PRESSURE.NAKAMURA Y; NUMATA M; HOSHINO H et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 2; PP. 259-265; BIBL. 17 REF.Article

STUDY OF IMPERFECTIONS IN GE-TE SEMICONDUCTORS BY THE POSITRON ANNIHILATION TECHNIQUEKOBRIN BV; KUPRIYANOVA RM; MINAEV VS et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 321-324; ABS. RUS; BIBL. 14 REF.Article

ELECTRICAL CONDUCTION MECHANISMS IN AMORPHOUS GETE THIN FILMSSHIRAISHI T; IIDA M; SHINOHARA J et al.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 45; NO 2; PP. 169-181; BIBL. 6 REF.Article

ELECTRICAL SWITCHING IN GERMANIUM-TELLURIUM FILMS.CHAKRABARTI UK.1976; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1976; VOL. 22; NO 7; PP. 472-473; BIBL. 3 REF.Article

PHOTOCONDUCTIVITY IN THE AMORPHOUS GE-RICH GEXTE1-X SYSTEM.SCHARNHORST KP; RIEDL HR.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 2971-2979; BIBL. 18 REF.Article

Unidirectional crystallization of amorphous Te-Ge alloySUZUKI, R. O; TSUDA, S; SHINGU, P. H et al.Journal of materials science letters. 1985, Vol 4, Num 12, pp 1495-1497, issn 0261-8028Article

MOESSBAUER STUDY OF THE DISORDER IN CRYSTALLINE AND AMORPHOUS GE IMPLANTED WITH 125MTE IONSDEZSI I; VAN ROSSUM M; DE BRUYN J et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 87; NO 4; PP. 193-195; BIBL. 15 REF.Article

THE STRUCTURE OF AMORPHOUS GESE AND GETEO'REILLY EP; ROBERTSON J; KELLY MJ et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 7; PP. 565-568; BIBL. 20 REF.Article

ON THE COMPOSITIONAL DEPENDENCE OF THE OPTICAL GAP IN AMORPHOUS SEMICONDUCTING ALLOYSSHIMAKAWA K.1981; J. NON-CRYST. SOLIDS; ISSN 0022-3093; NLD; DA. 1981; VOL. 43; NO 2; PP. 229-244; BIBL. 57 REF.Article

MAGNETIC SUSCEPTIBILITIES OF LIQUID IV B-TE ALLOYSTAKEDA SI; TSUCHIYA Y.1979; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1979; VOL. 47; NO 1; PP. 109-113; BIBL. 21 REF.Article

EFFECT OF ANNEALING ON AN AMORPHOUS GEXTE1-X MATRIX WITH TE CRISTALLITES.DENEUVILLE A; GERARD P; DEVENYI J et al.1976; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1976; VOL. 22; NO 1; PP. 77-88; BIBL. 18 REF.Article

Thermal diffusivity of Ge-Te glass near the glass-supercooled-liquid transitionQIANG XU; ICHIKAWA, K.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 31, pp L985-L989, issn 0022-3719Article

Calorimetric investigation of the structural relaxation and crystallization of amorphous Ge16Te84 alloysBERGMAN, C; AVRAMOV, I; ZAHRA, C. Y et al.Journal of non-crystalline solids. 1985, Vol 70, Num 3, pp 367-377, issn 0022-3093Article

Structural phase transitions in the liquid state and the melting enthalpy of the Se-Te systemTSUCHIYA, Y.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 9, pp 1209-1215, issn 0022-3719Article

Double stage crystallization of bulk Ge20Te80 glassPARTHASARATHY, G; BANDYOPADHYAY, A. K; GOPAL, E. S. R et al.Journal of materials science letters. 1984, Vol 3, Num 2, pp 97-99, issn 0261-8028Article

Susceptibilité magnétique des verres et dilatation thermique des produits de fusion dans le système Ge-Te-TlSHCHEDROVA, M. V; ANANICHEV, V. A; BAJDAKOV, L. A et al.Fizika i himiâ stekla. 1985, Vol 11, Num 1, pp 61-63, issn 0132-6651Article

CHEMICAL BOND APPROACH TO THE ELECTRONIC STRUCTURE OF AMORPHOUS SEMICONDUCTORSSHIMIZU T; NEGISHI R; ISHII N et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 31; NO 3; PP. 287-296; BIBL. 25 REF.Article

STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF THERMALLY EVAPORATED AMORPHOUS GEXTE1-X FILMS.NATH P; SURI SK; CHOPRA KL et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 771-780; ABS. ALLEM.; BIBL. 1 P.Article

BONDING IN LIQUIDE AND AMORPHOUS BINARY SEMICONDUCTOR ALLOYSROBERTSON J.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 2; PP. 239-263; BIBL. 2 P.Article

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