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Homologous series of layered tetradymite-like compounds in the Sb-Te and GeTe-Sb2Te3 systemsSHELIMOVA, L. E; KARPINSKII, O. G; KRETOVA, M. A et al.Inorganic materials. 2000, Vol 36, Num 8, pp 768-775, issn 0020-1685Article

Nitrogen-doped Sb-rich Si―Sb―Te phase-change material for high-performance phase-change memoryXILIN ZHOU; LIANGCAI WU; ZHITANG SONG et al.Acta materialia. 2013, Vol 61, Num 19, pp 7324-7333, issn 1359-6454, 10 p.Article

Size dependence of electrical resistivity and energy band gap of semiconducting (Bi0.4Sb0.6)2Te3 thin filmsDAMODARA DAS, V; GOPAL GANESAN, P.SPIE proceedings series. 1998, pp 1157-1160, isbn 0-8194-2756-X, 2VolConference Paper

Observation of crystallization in amorphous phase change films induced by femtosecond laser pulsesGUANGJUN ZHANG; DONGHONG GU; XIONGWEI JIANG et al.SPIE proceedings series. 2005, pp 59661D.1-59661D.4, isbn 0-8194-5984-4, 1VolConference Paper

Effect of Sb on pressure induced transformation in Se-Te glassSACHDEV, V. K; KOHLI, S; MATHUR, P. C et al.Physica status solidi. A. Applied research. 1996, Vol 155, Num 2, pp 461-466, issn 0031-8965Article

On the spatio-temporal flow phenomena in low Prandtl number melts. Part 1 : The case of stationary vertical molten zonesKÖNIG, F; NEUMANN, W.Crystal research and technology (1979). 2001, Vol 36, Num 3, pp 239-254, issn 0232-1300Article

Annealing of semimetal chalcogenide foils produced by ultrarapid liquid quenchingSHEPELEVICH, V. G.Inorganic materials. 1996, Vol 32, Num 6, pp 601-603, issn 0020-1685Article

Étude de l'ordre local par mesure enthalpique différentielle et par EXAFS en transmission dans les matériaux du sytème GeTeSb = Study of local order by differential scanning calorimetry and by exafs in the GeTeSb systemBOUCHAOUR, Zineb; BELHADJI, Maamar; MEDJAHED, Baghdad et al.Annales de chimie (Paris. 1914). 2001, Vol 26, Num 3, pp 1-7, issn 0151-9107Article

Etude et Réalisation de Disques Optiques Ré-Inscriptibles à Changement de Phase = Study and Realisation of Phase Change Rewritable Optical DiscsBruneau, Jean Michel; Tedjini, Smail.1998, 266 p.Thesis

Solid-state synthesis and characterization of new layered tellurites of antimony(V), ASb3Te2O12 (A = Cs, Rb, Tl)BALRAJ, V; VIDYASAGAR, K.Materials research bulletin. 2000, Vol 35, Num 4, pp 613-618, issn 0025-5408Article

Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Ar inductively coupled plasmasZHONGHUA ZHANG; SANNIAN SONG; BO LIU et al.Applied surface science. 2014, Vol 311, pp 68-73, issn 0169-4332, 6 p.Article

Estimation of incubation time for Sb2Te3 used in optical memoriesNAGPAL, S; PATHAK, P; MONA et al.SPIE proceedings series. 1998, pp 1218-1220, isbn 0-8194-2756-X, 2VolConference Paper

DETERMINATION ET CARACTERISATION DES ZONES VITREUSES DANS LE Ge-Te-Sb DEVITRIFICATION ET IDENTIFICATION DES PHASES CRISTALLINES = DETERMINATION AND CHARACTERIZATION OF VITREOUS AREA IN THE GeTeSb DIAGRAM. DEVITRIFICATION AND IDENTIFICATION OF THE CRYSTALLINE PHASESBELHADJI, Maamar; VAUTIER, C.1996, 161 p.Thesis

An X-ray study of the mixed-layered compounds of (GeTe)n(Sb2Te3)m homologous seriesKARPINSKY, O. G; SHELIMOVA, L. E; KRETOVA, M. A et al.Journal of alloys and compounds. 1998, Vol 268, pp 112-117, issn 0925-8388Article

Magnetic properties of Fe2O3-Sb2O3-TeO2 glassesARDELEAN, I; QIU, H.-H; SAKATA, H et al.Materials letters (General ed.). 1997, Vol 32, Num 5-6, pp 335-338, issn 0167-577XArticle

Thermo EMF and Hall effect behaviour of thin films of antimony-tellurium alloyDHIREN SINGH, N; SARMA, H. N. K.Physica status solidi. A. Applied research. 1994, Vol 142, Num 2, pp K69-K71, issn 0031-8965Article

Isothermal phase transformation kinetics in stoichiometric GeSbTe thin filmsLAINE, B; RIVERA-RODRIGUES, C; MORALES-SANCHEZ, E et al.Journal of non-crystalline solids. 2004, Vol 345-46, pp 173-177, issn 0022-3093, 5 p.Conference Paper

Thermoelectric properties of Bi2Te3-Sb2Te3 single crystals in the range 100-700 KIVANOVA, L. D; GRANATKINA, Yu. V.Inorganic materials. 2000, Vol 36, Num 7, pp 672-677, issn 0020-1685Article

Fabrication and thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds by ingot extrusionSEO, J; CHO, D; PARK, K et al.Materials research bulletin. 2000, Vol 35, Num 13, pp 2157-2163, issn 0025-5408Article

Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometryHAO CUI; BHAT, I. B; VENKATASUBRAMANIAN, R et al.Journal of electronic materials. 1999, Vol 28, Num 10, pp 1111-1114, issn 0361-5235Article

Circular magnetic dichroism on MIV,V(U) edges in USb0.5Te0.5DALMAS DE REOTIER, P; SANCHEZ, J. P; VOGT, O et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.451-C2.452, issn 1155-4339, 1Conference Paper

Novel preparation methods of electrical contacts in Ge-Sb-Te thin filmsMAHMOUD, Saleh T; GHAMLOUCHE, H; QAMHIEH, N et al.Applied surface science. 2007, Vol 253, Num 17, pp 7242-7245, issn 0169-4332, 4 p.Article

The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3SiSØTOFTE, I; MAKOVICKY, E; KARUP-MØLLER, S et al.Zeitschrift für Kristallographie. 1998, Vol 213, Num 7-8, pp 382-385, issn 0044-2968Article

Thermoelectric figure of merit of the system (GeTe)1-x(AgSbTe2)x = Thermoelektrischer Wirkungsgrad des Systems (GeTe)1-x(AgSbTe2)xPLACHKOVA, S.K.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 349-355, issn 0031-8965Article

Performance improvement of Sb2Te3 phase change material by Al dopingCHENG PENG; LIANGCAI WU; JUNHAO CHU et al.Applied surface science. 2011, Vol 257, Num 24, pp 10667-10670, issn 0169-4332, 4 p.Article

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