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Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper

The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurementsVERRET, D. P.IEEE electron device letters. 1984, Vol 5, Num 5, pp 142-144, issn 0741-3106Article

A TaSi_x barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconNEPPL, F; FISCHER, F; SCHWABE, U et al.Thin solid films. 1984, Vol 120, Num 4, pp 257-266, issn 0040-6090Article

Spectroscopy and imaging of metal-organic interfaces using BEEMKUNARDI, Linda; TROADEC, Cedric; CHANDRASEKHAR, N et al.Applied surface science. 2006, Vol 252, Num 11, pp 4020-4022, issn 0169-4332, 3 p.Conference Paper

On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

Theory of beam-induced currents in semiconductorsZOOK, J. D.Applied physics letters. 1983, Vol 42, Num 7, pp 602-604, issn 0003-6951Article

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

Hydrogen sensitivity of Pt-Pd/p-CaFe₂O₄ diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article

Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height LoweringZHIJUN QIU; ZHEN ZHANG; OSTLING, Mikael et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 1, pp 396-403, issn 0018-9383, 8 p.Article

Electrophoresis deposition of metal nanoparticles with reverse micelles onto InPZDANSKY, Karel; ZAVADIL, Jiri; KACEROVSKY, Pavel et al.International journal of materials research. 2009, Vol 100, Num 9, pp 1234-1238, issn 1862-5282, 5 p.Article

Probing the Interface Barriers of Dopant-Segregated Silicide―Si Diodes With Internal PhotoemissionZHEN ZHANG; ATKIN, Joanna; HOPSTAKEN, Marinus et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2027-2032, issn 0018-9383, 6 p.Article

Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodesDOGAN, H; YILDIRIM, N; TURUT, A et al.Microelectronic engineering. 2008, Vol 85, Num 4, pp 655-658, issn 0167-9317, 4 p.Article

Comment on the paper entitled «characterization of the interface states at Al-GaAs Schottky» barriers with a thin interface layerVAN MEIRHAEGHE, R. L; LAFLERE, W. H; MORANTE, J. R et al.Solid-state electronics. 1984, Vol 27, Num 12, issn 0038-1101, 1157Article

THE F_T CHARACTERISTICS OF EPITAXIAL NPN TRANSISTORS IN UPWARD OPERATIONKWAN KW; BRUNNSCHWEILER A; ROULSTON DJ et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 305-312; BIBL. 12 REF.Article

CHARACTERISTICS OF MODULATION-DOPED AL_XGA_1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

RESPONSE TIMES FOR A STORAGE ELECTROOPTIC EFFECT IN LIQUID CRYSTALSFRUNZA S; BEICA T; MOLDOVAN R et al.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 44; NO 5; PP. 330-332; BIBL. 5 REF.Article

Variations spectrales du photocourant des structures à barrière superficielle à base de silicium hydrogéné amorphe. Relations théoriquesSACHENKO, A. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1782-1786, issn 0015-3222Article

Pyramid-Shape Tris(8-hydroxyquinoline) Aluminum Schottky DiodeLO, Shih-Shou; SHU HAO SIE.Journal of physical chemistry. C. 2012, Vol 116, Num 30, pp 16122-16126, issn 1932-7447, 5 p.Article

Control of Schottky barrier height of Ag/Mn/n-GaAs(110) diodes with Mn interlayer thicknessSPALTMANN, D; GEURTS, J; ESSER, N et al.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 344-346, issn 0268-1242Article

Characterization of WSi_X/GaAs Schottky contactsOHNISHI, T; YOKOYAMA, N; ONODERA, H et al.Applied physics letters. 1983, Vol 43, Num 6, pp 600-602, issn 0003-6951Article

Characteristics of electrodeposited SnO₂-CdS/Au Schottky devices = Caractéristiques des dispositifs Schottky au SnO₂-CdS/Au électrodéposésJAYACHANDRAN, M; CHOCKALINGAM, M. J; VENKATESAN, V. K et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp K217-K221, issn 0031-8965Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article