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Results 1 to 25 of 7592

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Schottky Barrier Height of Erbium Silicide on Si1―xCxALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 949-951, issn 0741-3106, 3 p.Article

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant SegregationJUN LUO; ZHANG, Shi-Li; QIU, Zhi-Jun et al.IEEE electron device letters. 2009, Vol 30, Num 6, pp 608-610, issn 0741-3106, 3 p.Article

Modification of Schottky barrier height on Si (111) by Ga-terminationWEI LONG; YANG LI; TUNG, Raymond T et al.Surface science. 2013, Vol 610, pp 48-52, issn 0039-6028, 5 p.Article

Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper

The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurementsVERRET, D. P.IEEE electron device letters. 1984, Vol 5, Num 5, pp 142-144, issn 0741-3106Article

Stability and Schottky barrier of silicides: First-principles studyNAKAYAMA, T; SOTOME, S; SHINJI, S et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1718-1721, issn 0167-9317, 4 p.Conference Paper

A TaSix barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconNEPPL, F; FISCHER, F; SCHWABE, U et al.Thin solid films. 1984, Vol 120, Num 4, pp 257-266, issn 0040-6090Article

Spectroscopy and imaging of metal-organic interfaces using BEEMKUNARDI, Linda; TROADEC, Cedric; CHANDRASEKHAR, N et al.Applied surface science. 2006, Vol 252, Num 11, pp 4020-4022, issn 0169-4332, 3 p.Conference Paper

On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

Theory of beam-induced currents in semiconductorsZOOK, J. D.Applied physics letters. 1983, Vol 42, Num 7, pp 602-604, issn 0003-6951Article

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodesLIN, Yow-Jon; LIN, Jian-Huang.Applied surface science. 2014, Vol 311, pp 224-229, issn 0169-4332, 6 p.Article

Preparation and properties of epitaxial PbSe/BaF2/PbSe structuresVOGT, W; ZOGG, H; MELCHIOR, H et al.Acta paediatrica scandinavica. 1985, Vol 25, Num 4, pp 611-614, issn 0001-656XArticle

Dependence of barrier height on energy gap in Au n-type GaAs1-xPx Schottky diodesSTIRN, R. J.Applied physics communications. 1981, Vol 1, Num 1, pp 43-53, issn 0277-9374Article

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structuresBOR WEN LIOU.Thin solid films. 2009, Vol 517, Num 24, pp 6558-6564, issn 0040-6090, 7 p.Article

APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

Hydrogen sensitivity of Pt-Pd/p-CaFe2O4 diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article

Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height LoweringZHIJUN QIU; ZHEN ZHANG; OSTLING, Mikael et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 1, pp 396-403, issn 0018-9383, 8 p.Article

Process design of a novel shielded SBD and its device characteristicsSAGARA, K; ONAI, T; HOMMA, N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1853-1854, issn 0018-9383, 2 p., 1Article

The barrier height of Schottky diodes with a chemical-vapor-deposited diamond baseHICKS, M. C; WRONSKI, C. R; GROT, S. A et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 2139-2141, issn 0021-8979, 3 p.Article

Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfacesSCHMID, P. E; HO, P. S; FOLL, H et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4593-4601, issn 0163-1829Article

Polarization fatigue in asymmetric-field-driven ferroelectric thin filmsWANG, Y; WONG, K. H; SHIN, F. G et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 806-812, issn 0167-9317, 7 p.Conference Paper

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