Theory of beam-induced currents in semiconductorsZOOK, J. D.Applied physics letters. 1983, Vol 42, Num 7, pp 602-604, issn 0003-6951Article

On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

Hydrogen sensitivity of Pt-Pd/p-CaFe₂O₄ diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article

THE F_T CHARACTERISTICS OF EPITAXIAL NPN TRANSISTORS IN UPWARD OPERATIONKWAN KW; BRUNNSCHWEILER A; ROULSTON DJ et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 305-312; BIBL. 12 REF.Article

CHARACTERISTICS OF MODULATION-DOPED AL_XGA_1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

RESPONSE TIMES FOR A STORAGE ELECTROOPTIC EFFECT IN LIQUID CRYSTALSFRUNZA S; BEICA T; MOLDOVAN R et al.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 44; NO 5; PP. 330-332; BIBL. 5 REF.Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

Electrical and photovoltaic properties of Ag/p-AgGaSe₂ polycrystalline thin film Schottky barrier diodesSATYANARAYANA MURTHY, Y; MAHAMMAD HUSSAIN, O; UTHANNA, S et al.Physics letters. A. 1991, Vol 152, Num 5-6, pp 311-314, issn 0375-9601Article

The Bethe condition for thermionic emission near an absorbing boundaryBERZ, F.Solid-state electronics. 1985, Vol 28, Num 10, pp 1007-1013, issn 0038-1101Article

Optimal barrier height for Schottky diode rectifiersASHOK, S.International journal of electronics. 1984, Vol 57, Num 3, pp 429-431, issn 0020-7217Article

An analytic model for barrier height enhancement of the Schottky barrier diode using low-energy ion implantationCHING-YUAN WU.Journal of applied physics. 1983, Vol 54, Num 2, pp 971-976, issn 0021-8979Article

A study of surface passivation on GaAs and In_0.53Ga_0.47 Schottky-barrier photodiodes using SiO₂, Si₃N₄ and polyimideLEE, D. H; LI, S. S; LEE, S et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1695-1696, issn 0018-9383Article

Application of the DPC method to Schottky-barrier photodiode with interfacialHASEGAWA, S; TANAKA, A; SUKEGAWA, T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 711-712, issn 0018-9383Article

The performance of high-voltage field relieved Schottky barrier diodesFISHER, C. A; SHANNON, J. M; PAXMAN, D. H et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 6, pp 257-260, issn 0143-7100Article

Schottky barrier diode on a submicron-thick silicon membrane using a dual surface fabrication techniqueLEE, K; SILCOX, J; LEE, C. A et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 4038-4040, issn 0021-8979Article

Controlled low barrier height n⁺-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodesKLEINSASSER, A. W; WOODALL, J. M; PETTIT, G. D et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1168-1170, issn 0003-6951Article

Picosecond luminescence measurements on fast GaAs Schottky diodes under changing circuit conditionsVON LEHMEN, A; BALLANTYNE, J. M.Applied physics letters. 1984, Vol 45, Num 7, pp 767-769, issn 0003-6951Article

Electrical properties of Au-Cu-doped Si Schottky diodeTOYAMA, N.Journal of applied physics. 1983, Vol 54, Num 2, pp 932-936, issn 0021-8979Article

Hot-electron noise generation in gallium-arsenide Schottky-barrier diodesKEEN, N. J; ZIRATH, H.Electronics Letters. 1983, Vol 19, Num 20, pp 853-854, issn 0013-5194Article

Selective photoreceivers based on Schottky diodes with a periodically profiled surfaceBELYAKOV, L. V; GORYAYEV, D. N; RUMYANTSEV, B. L et al.Telecommunications & radio engineering. 1992, Vol 47, Num 10, pp 14-17, issn 0040-2508Article

High temperature Schottky diodes with boron-doped homoepitaxial diamond baseGILDENBLAT, G. S; GROT, S. A; HATFIELD, C. W et al.Materials research bulletin. 1990, Vol 25, Num 1, pp 129-134, issn 0025-5408Article

Conversion losses in GaAs Schottky-Barrier diodesVON ROOS, O; KE-LI WANG.IEEE transactions on microwave theory and techniques. 1986, Vol 34, Num 1, pp 183-187, issn 0018-9480Article