kw.\*:("Se Zn")
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XANES analysis of L3,2 edges of zinc selenides with transition metalsZIMNAL-STARNAWSKA, M; CZARNECKA-SUCH, E; KISIEL, A et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.1201-C2.1202, issn 1155-4339, 2Conference Paper
Improvement in lasing characteristics of II-VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructuresPETRUZZELLO, J; DRENTEN, R; GAINES, J. M et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 686-691, issn 0022-0248Conference Paper
Lateral-index-guided ZnCdSSe lasersSTRASSBURG, M; SCHULZ, O; POHL, U. W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1054-1057, issn 0022-0248Conference Paper
Pseudomorphic separate confinement heterostructure blue-green diode lasersGRILLO, D. C; FAN, Y; OTSUKA, N et al.Applied physics letters. 1993, Vol 63, Num 20, pp 2723-2725, issn 0003-6951Article
Multiphonon Raman scattering in ZnSe/Zn0.80Cd0.20Se superlatticesLI, W. S; FAN, X. W; YANG, B. J et al.Thin solid films. 1995, Vol 271, Num 1-2, pp 147-150, issn 0040-6090Article
Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg, Zn, Cd)(S, Se)IVANOV, S; SOROKIN, S; KRESTNIKOV, I et al.Journal of crystal growth. 1998, Vol 184-85, pp 70-74, issn 0022-0248Conference Paper
Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substratesTROUBENKO, P. A; KOZLOVSKY, V. I; YAO, T et al.Journal of crystal growth. 2001, Vol 227-28, pp 699-704, issn 0022-0248Conference Paper
Microscopic defect induced slow-mode degradation in II-VI based blue-green laser diodesADACHI, M; ZAW MIN AUNG; NAKANO, K et al.Journal of crystal growth. 2000, Vol 214-15, pp 1035-1039, issn 0022-0248Conference Paper
Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with ironSURKOVA, T. P; KACZOR, P; ZAKRZEWSKI, A. J et al.Journal of crystal growth. 2000, Vol 214-15, pp 576-580, issn 0022-0248Conference Paper
Continuous-wave, room temperature, ridge waveguide green-blue diode laserSALOKATVE, A; JEON, H; GUNSHOR, R. L et al.Electronics Letters. 1993, Vol 29, Num 25, pp 2192-2194, issn 0013-5194Article
High-resolution X-ray diffraction study of degrading ZnSe-based laser diodesGERHARD, T; ALBERT, D; FASCHINGER, W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1049-1053, issn 0022-0248Conference Paper
Optics and magneto-optics of ZnSe heteroepitaxial layersALIEV, G. N; DATSIEV, R. M; IVANOV, S. V et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 523-527, issn 0022-0248Conference Paper
Compound-source molecular beam epitaxy for ZnCdSe/ZnCdSe/ZnSSe/ZnMgSSe laser structureOHKAWA, K; YOSHII, S; TAKEISHI, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 12A, pp L1673-L1675, issn 0021-4922, 2Article
Low-threshold buried-ridge II-VI laser diodesHAASE, M. A; BAUDE, P. F; HAGEDORN, M. S et al.Applied physics letters. 1993, Vol 63, Num 17, pp 2315-2317, issn 0003-6951Article
Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxyKIM, M.-D; KIM, B.-J; JEON, M.-H et al.Journal of crystal growth. 1997, Vol 175-76, pp 637-641, issn 0022-0248, 1Conference Paper
Temperature-dependent line widths of single excitons and biexcitonsGINDELE, F; HILD, K; LANGBEIN, W et al.Journal of luminescence. 2000, Vol 87-89, pp 381-383, issn 0022-2313Conference Paper
Multiphonon relaxation in ZnSe/ZnCdSe superlatticeMELNIK, N. N; SADOFYEV, Yu. G; ZAVARITSKAYA, T. N et al.Journal of crystal growth. 2000, Vol 214-15, pp 651-655, issn 0022-0248Conference Paper
Length dependence of the longitudinal optical phonon properties in CdZnSe/ZnSe quantum wiresSCHREDER, B; MATERNY, A; KIEFER, W et al.Solid state communications. 2000, Vol 114, Num 8, pp 435-440, issn 0038-1098Article
Laser action in ZnCdSe/ZnSe asymmetric double-quantum-wellGUANGYOU YU; XIWU FAN; JIYING ZHANG et al.Solid state communications. 1999, Vol 110, Num 3, pp 127-130, issn 0038-1098Article
Optical characteristics of ZnCdSe/ZnSSe single quantum wellsTSUKAMOTO, H; TAMAMURA, K; NAGAI, M et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 679-684, issn 0022-0248Article
Second-harmonic generation in ZnCdSe/ZnSe asymmetric double quantum wellsGUANGYOU YU; FAN, X. W; SHUMEI WANG et al.Solid state communications. 1998, Vol 107, Num 9, pp 463-465, issn 0038-1098Article
Growth of ZnSe and ZnCdSe on (2 1 1)B GaAs substratesTELFER, S. A; HORSBURGH, G; MILNES, J. S et al.Journal of crystal growth. 1998, Vol 184-85, pp 51-56, issn 0022-0248Conference Paper
Dependence of CdZnSe/ZnMgSSe laser diode operating characteristics on band gap and net acceptor concentration of p-type cladding layerNAKATSUKA, S; GOTOH, J; MOCHIZUKI, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1431-1435, issn 0021-4922, 1Conference Paper
Dynamics of the magnetic polaron formation in ZnSe/ZnMnSe quantum well structuresROSSIN, V. V; HENNEBERGER, F; PULS, J et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 985-988, issn 0022-0248Conference Paper
Optical gain in an inhomogeneously broadened exciton systemISHIHARA, T; IKEMOTO, Y; GOTO, T et al.Journal of luminescence. 1994, Vol 58, Num 1-6, pp 241-243, issn 0022-2313Conference Paper