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Fabrication of nanostructures by selective growth of C60 and Si on Si(111) substrateNAKAYA, Masato; NAKAYAMA, Tomonobu; KUWAHARA, Yuji et al.Surface science. 2006, Vol 600, Num 13, pp 2810-2816, issn 0039-6028, 7 p.Article
Selective growth of carbon nanotubes on silicon protrusionsSATO, Hideki; HATA, Koichi; MIYAKE, Hideto et al.International Vacuum Nanoelectronics Conference. 2004, pp 210-211, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper
An integrated silicon colour sensor using selective epitaxial growthBARTEK, M; GENNISSEN, P. T. J; SARRO, P et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 123-128, issn 0924-4247Conference Paper
Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxyKISHINO, K; HOSHINO, T; ISHIZAWA, S et al.Electronics Letters. 2008, Vol 44, Num 13, pp 819-821, issn 0013-5194, 3 p.Article
Arrangement of gold nanoparticles on rough surfaces introduced by electron irradiation with high fluxTORIGOE, K; OHNO, Y; ICHIHASHI, T et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 916-919, issn 0921-4526, 4 p.Conference Paper
Simple approach to fabricate microgated nanotubes emitter with a sidewall protectorJANG, Yoon-Taek; CHOI, Chang-Hoon; JU, Byeong-Kwon et al.Physica. B, Condensed matter. 2003, Vol 334, Num 1-2, pp 9-12, issn 0921-4526, 4 p.Article
Selective growth of β-SiC whisker on a patterned Si (111) substrate for a field emission deviceJONG HOON PARK; KIM, Weon-Ju; DO JIN KIM et al.Thin solid films. 2007, Vol 515, Num 13, pp 5519-5523, issn 0040-6090, 5 p.Article
Position-selective growth of vertically aligned carbon nanotubes for application of electronic-measuring nanoprobesOKUYAMA, Hiroki; IWATA, Nobuyuki; YAMAMOTO, Hiroshi et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 37, Num 1-2, pp 49-53, issn 1386-9477, 5 p.Conference Paper
Growth of aluminum on Si using dimethyl-ethyl amine alaneNEO, Y; NIWANO, M; MIMURA, H et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 443-446, issn 0169-4332Conference Paper
Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)HEINECKE, H; WACHTER, M.Applied surface science. 1997, Vol 113114, pp 1-8, issn 0169-4332Conference Paper
MOCVD selective growth of orthorhombic or hexagonal YMnO3 phase on Si(100) substrateILIESCU, I; BOUDARD, M; RAPENNE, L et al.Applied surface science. 2014, Vol 306, pp 27-32, issn 0169-4332, 6 p.Conference Paper
Selective deposition of CVD iron on silicon dioxide and tungstenLOW, Y. H; BAIN, M. F; BIEN, D. C. S et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2229-2233, issn 0167-9317, 5 p.Conference Paper
Building and testing organized architectures of carbon nanotubesVAJTAI, Robert; BINGQING WEI; YUNG JOON JUNG et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 4, pp 355-361, issn 1536-125X, 7 p.Conference Paper
Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growthTERASHIMA, Koichi; TANABE, Akihito; NAKAGAWA, Takashi et al.Applied surface science. 2008, Vol 254, Num 19, pp 6165-6167, issn 0169-4332, 3 p.Conference Paper
Epitaxial growth of carbon caps on Ni for chiral selectivityREICH, S; LI, L; ROBERTSON, J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 13, pp 3494-3499, issn 0370-1972, 6 p.Conference Paper
Fabrication of C60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substratesUENO, K; SASAKI, K; NAKAHARA, T et al.Applied surface science. 1998, Vol 130-32, pp 670-675, issn 0169-4332Conference Paper
Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxySATO, Taketomo; TAMAI, Isao; YOSHIDA, Souichi et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 11-15, issn 0169-4332, 5 p.Conference Paper
Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfacesLE THANH, V; NGO, Tam T. T; BUI, Huy et al.Thin solid films. 2003, Vol 428, Num 1-2, pp 144-149, issn 0040-6090, 6 p.Conference Paper
Selective growth of platinum electrodes for MDOF IPMC actuatorsJEON, Jin-Han; OH, Il-Kwon.Thin solid films. 2009, Vol 517, Num 17, pp 5288-5292, issn 0040-6090, 5 p.Conference Paper
Si nanostripe formation on vicinal Ge(1 0 0) surfacesTEGENKAMP, C; PFNÜR, H.Surface science. 2005, Vol 574, Num 2-3, pp 205-213, issn 0039-6028, 9 p.Article
Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission deviceHYUNG SOO UH; SANG SIK PARK.Thin solid films. 2006, Vol 504, Num 1-2, pp 50-54, issn 0040-6090, 5 p.Conference Paper
Ni(OH)2@Co(OH)2 hollow nanohexagons: Controllable synthesis, facet-selected competitive growth and capacitance propertyDAN ZHOU; XINRUO SU; BOESE, Markus et al.Nano energy (Print). 2014, Vol 5, pp 52-59, issn 2211-2855, 8 p.Article
Formation of symmetric and asymmetric metal-semiconductor hybrid nanoparticlesMOKARI, T; COSTI, R; SZTRUM, C. G et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 15, pp 3952-3958, issn 0370-1972, 7 p.Conference Paper
Selective Growth of Fullerenes from C60 to C70: Inherent Geometrical Connectivity Hidden in Discrete Experimental EvidenceWANG, Wei-Wei; DANG, Jing-Shuang; ZHENG, Jia-Jia et al.Journal of physical chemistry. C. 2013, Vol 117, Num 5, pp 2349-2357, issn 1932-7447, 9 p.Article
Synthesis and Structural Characterization of Single-Crystal K7.5Si46 and K17.8Si136 ClathratesSTEFANOSKI, Stevce; NOLAS, George S.Crystal growth & design. 2011, Vol 11, Num 10, pp 4533-4537, issn 1528-7483, 5 p.Article