Optical spectra of quantum dot aggregates in the sub-wetting layer regionKRAL, Karel; ZDENEK, Petr.Microelectronic engineering. 2003, Vol 69, Num 2-4, pp 256-260, issn 0167-9317, 5 p.Conference Paper

Observation of Overhauser shift in a self-assembled InAlAs quantum dotYOKOI, T; ADACHI, S; MUTO, S et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 29, Num 3-4, pp 510-514, issn 1386-9477, 5 p.Conference Paper

Modified growth of Ge quantum dots using C₂H₄ mediation by ultra-high vacuum chemical vapor depositionLEE, S. W; CHEN, P. S; CHENG, S. L et al.Applied surface science. 2008, Vol 254, Num 19, pp 6261-6264, issn 0169-4332, 4 p.Conference Paper

Role of electron-hole symmetry in the strength of polarization emission spectra of multiexcitonsHWANG, N. Y; YANG, S.-R. Eric.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1154-1156, issn 1386-9477, 3 p.Conference Paper

Electroluminescence of single-dot nano-LEDs-optical spectroscopy of an electrically tunable few-electron/hole systemSCHMIDT, R; VITZETHUM, M; STUFLER, S et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 26, Num 1-4, pp 110-114, issn 1386-9477, 5 p.Conference Paper

Polarization dependence of emission spectra of multiexcitons in self-assembled quantum dotsHWANG, N. Y; YANG, S.-R. Eric.Solid state communications. 2007, Vol 143, Num 3, pp 176-181, issn 0038-1098, 6 p.Article

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatmentsLEE, S. W; CHEN, L. J; CHEN, P. S et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 152-155, issn 0169-4332, 4 p.Conference Paper

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth AnnealingHUANG, Chun-Yuan; OU, Tzu-Min; CHOU, Shu-Ting et al.IEEE transactions on nanotechnology. 2007, Vol 6, Num 6, pp 589-594, issn 1536-125X, 6 p.Article

Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dotsJINJU ZHENG; ZHUHONG ZHENG; WEIWEI GONG et al.Solid state communications. 2008, Vol 147, Num 11-12, pp 429-432, issn 0038-1098, 4 p.Article

Temperature dependence of the electron distribution in a GaAs matrix with embedded inas quantum dotsCHIQUITO, Adenilson J; DE SOUZA, Marcelo G.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 613-618, issn 1386-9477, 6 p.Article

Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum wellKODERA, Tetsuo; ONO, Keiji; KUMAGAI, Naoto et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2592-2594, issn 1386-9477, 3 p.Conference Paper

Field-emission properties of self-assembled Si-capped Ge quantum dotsLEE, S. W; CHUEH, Y. L; CHEN, H. C et al.Thin solid films. 2006, Vol 508, Num 1-2, pp 218-221, issn 0040-6090, 4 p.Conference Paper

Formation of Ge self-assembled quantum dots on a Si_xGe_1-x buffer layerKIM, Hyungjun; SHIN, Chansun; CHANG, Joonyeon et al.Applied surface science. 2005, Vol 252, Num 5, pp 1476-1480, issn 0169-4332, 5 p.Article

PL characteristics of InAs quantum dots with Sb irradiation in growth interruptionMATSUURA, T; MIYAMOTO, T; OHTA, M et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 51-56, issn 0022-0248, 6 p.Conference Paper

Effects of size and shape on electronic states of quantum dotsCHUN YONG NGO; SOON FATT YOON; WEIJUN FAN et al.Optical and quantum electronics. 2006, Vol 38, Num 12-14, pp 981-991, issn 0306-8919, 11 p.Conference Paper

Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxyYEW, K. C; YOON, S. F; SUN, Z. Z et al.Journal of crystal growth. 2003, Vol 247, Num 3-4, pp 279-283, issn 0022-0248, 5 p.Article

Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSbPIMPINELLA, R. E; LIU, X; FURDYNA, J. K et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 992-995, issn 0361-5235, 4 p.Conference Paper

Optical property of self-assembled InAs quantum dots in Al_0.5Ga_0.5As barriers grown by molecular beam epitaxySHUWEI LI; KOIKE, Kazuto.Journal of crystal growth. 2004, Vol 263, Num 1-4, pp 53-57, issn 0022-0248, 5 p.Article

Influence of point defects on the optical properties of self-assembled Ge/Si hut clustersNGUYEN-DUC, T. K; LE THANH, V; YAM, V et al.Thin solid films. 2006, Vol 508, Num 1-2, pp 207-212, issn 0040-6090, 6 p.Conference Paper

Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a In_xGa_1-xAs/InP heterostructureMENDOZA-ALVAREZ, J. G; PIRES, M. P; LANDI, S. M et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 85-88, issn 1386-9477, 4 p.Conference Paper

Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructuresHAYNE, M; MAES, J; BERSIER, S et al.Physica. B, Condensed matter. 2004, Vol 346-47, pp 421-427, issn 0921-4526, 7 p.Conference Paper

Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonatorPIEGDON, Karoline A; OFFER, Matthias; WIECK, Andreas D et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2552-2555, issn 1386-9477, 4 p.Conference Paper

Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical propertiesLIANG, S; ZHU, H. L; PAN, J. Q et al.Journal of crystal growth. 2006, Vol 289, Num 2, pp 477-484, issn 0022-0248, 8 p.Article

Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrateYOON, Tae-Sik; ZUOMING ZHAO; WEN FENG et al.Journal of crystal growth. 2006, Vol 290, Num 2, pp 369-373, issn 0022-0248, 5 p.Article

Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush methodKUMAGAI, N; OHKOUCHI, S; NAKAGAWA, S et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2753-2756, issn 1386-9477, 4 p.Conference Paper