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USING FERMI-DIRAC STATISTICS IN THE DEPOLARIZATION-FIELD CALCULATIONS.WURFEL P; BATRA IP.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 3; PP. 1118-1121; BIBL. 8 REF.Article

Multilayered diluted magnetic semiconductor structures and 2DEGGRUBIN, H. L; WOOLARD, Dwight L.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59950Q.1-59950Q.12, issn 0277-786X, isbn 0-8194-6019-2, 1VolConference Paper

Multi-ability ferrimagnetic semiconductor module for use as a protection and supersonic environmental monitor in the thyristor systemSEKI, K; SHIDA, J.-I; MATSUKI, H et al.IEEE transactions on power electronics. 1991, Vol 6, Num 4, pp 630-635, issn 0885-8993Article

RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS.CHANG LL; ESAKI L; TSU R et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 593-595; BIBL. 12 REF.Article

ELECTROLUMINESCENCE FROM CADMIUM SULPHIDE MS, MIS AND SIS DEVICESWHEELER DJ; HANEMAN D.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 875-882; H.T. 3; BIBL. 31 REF.Serial Issue

Synthesis and characterization of fullerene derivatives with perfluoroalkyl groupsXUEMEI WANG; YUNLONG GUO; YI XIAO et al.Journal of material chemistry. 2009, Vol 19, Num 20, pp 3258-3262, issn 0959-9428, 5 p.Article

SEMICONDUCTOR IMAGE DEVICES FOR SPECTROSCOPY AUTOGUIDING AND PHOTOMETRYJELLEY JV.1973; OBSERVATORY; G.B.; DA. 1973; VOL. 93; NO 992; PP. 9-13; BIBL. 14REF.Serial Issue

Bulk waves in elastic semiconductors in the presence of an initial stateNAOUM DAHER; MAUGIN, G. A.International journal of engineering science. 1988, Vol 26, Num 9, pp 993-1012, issn 0020-7225Article

Microhardness as a function of Mn concentration in Ga1-xMnxSb, a novel III-V semimagnetic semiconductorADHIKARI, T; BASU, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 38, Num 1-2, pp 147-149, issn 0921-5107Article

Structural studies of tetrahedrally-coordinated semiconductors at high pressure : new systematicsMCMAHON, M. I; NELMES, R. J.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 485-490, issn 0022-3697Conference Paper

MESURE DE L'EPAISSEUR DU DOMAINE DE SENSIBILITE DES DETECTEURS AU SILICIUMSELYUTIN VP; KRIDINER LS; GATSENKO LS et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 6; PP. 54-56; BIBL. 5 REF.Serial Issue

Electronic structure of n-i-p-i Si superlatticesDI VENTRA, M; GROSSO, G; PARRAVICINI, G. P et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 50, pp L657-L661, issn 0953-8984Article

Dopant electromigration in semiconductorsCAHEN, D; CHERNYAK, L.Advanced materials (Weinheim). 1997, Vol 9, Num 11, pp 861-876, issn 0935-9648Article

Low-temperature heat capacity of zero-gap semiconductorsCEROFOLINI, G. F; MEDA, L.Physica status solidi. B. Basic research. 1987, Vol 141, Num 2, pp K93-K95, issn 0370-1972Article

XVII Latin American Symposium on Solid State PhysicsSANCHEZ, Maria; DE MELO, Osvaldo.Physica status solidi. B. Basic research. 2005, Vol 242, Num 9, issn 0370-1972, 213 p.Conference Proceedings

SURFACE BARRIER PARTICULE DETECTORSHANSEN NJ; SCOTT RG; HENDERSON DJ et al.1972; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1972; VOL. 104; NO 2; PP. 333-336; BIBL. 7 REF.Serial Issue

VANNE A VIDE DE FAIBLE GABARIT POUR CRYOSTAT DE DETECTEUR AU GERMANIUMGRINBERG AP.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 241-242; BIBL. 3 REF.Serial Issue

Three decades of our graduate research and education in compound semiconductor materials and devicesEASTMAN, Lester F.IEEE Lester Eastman conference on high performance devices. 2002, pp 4-9, isbn 0-7803-7478-9, 6 p.Conference Paper

EVALUATING SEMICONDUCTOR RADIATION DETECTORSBECKETT J.1972; PROCESS INSTRUMENT.; G.B.; DA. 1972; VOL. 1; NO 9; PP. 431-432; BIBL. 4 REF.Serial Issue

EVALUATION OF LITHIUM DRIFTED GERMANIUM DETECTORS FOR ORGAN SCANNINGPATTON J; BRILL AB; ROLFES R et al.sdORO-2401-49; CONF-710605-1; U.S.A.; DA. S.D.; PP. 1-19; (18TH ANNU. MEET. SOC. NUCL. MED.; LOS ANGELES, CALIF.; JUNE 28-JULY 2, 1971). MICROFICHEConference Proceedings

ETAT ACTUEL DU DEVELOPPEMENT DES DETECTEURS CDTESKRIVANKOVA M.1973; JADER. ENERG.; CESKOSL.; DA. 1973; VOL. 19; NO 2; PP. 47-50; ABS. ANGL.; BIBL. 18 REF.Serial Issue

DETECTEUR A BARRIERE DE SURFACE SI PVAKHTEL VM; DEGTYARENKO VN; SUKHOTIN LN et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 66-67; BIBL. 4 REF.Serial Issue

ETUDE DE L'INSTABILITE DE L'AMPLIFICATION D'UN RADIOMETRE A SEMICONDUCTEURSBREZGUNOV VN; UDAL'TSOV VA.1972; TRUDY FIZ. INST. P.N. LEBEDEVA, MOSKVA; S.S.S.R.; DA. 1972; VOL. 62; PP. 68-76; BIBL. 4REF.Serial Issue

Synthetic Aspects of Organic SemiconductorsANTHONY, John E; HEENEY, Martin; ONG, Beng S et al.MRS bulletin. 2008, Vol 33, Num 7, pp 698-705, issn 0883-7694, 8 p.Article

International Conference on Semiconductor Quantum Dots (QD 2000), Munich, Germany, July 31-August 3, 2000. Part 3Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, issn 0370-1972, 271 p.Conference Proceedings

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