kw.\*:("Semiconducteur II-VI")
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Special Issue on the 2000 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsJournal of electronic materials. 2001, Vol 30, Num 6, issn 0361-5235, 241 p.Conference Proceedings
Blue-green semiconductor lasersNURMIKKO, A. V; GUNSHOR, R. L.Solid state communications. 1994, Vol 92, Num 1-2, pp 113-118, issn 0038-1098Article
A reproducible route to p-ZnO films and their application in light-emitting devicesSUN, F; SHAN, C. X; LI, B. H et al.Optics letters. 2011, Vol 36, Num 4, pp 499-501, issn 0146-9592, 3 p.Article
Unified description of Cu-related luminescence processes in II-VI semiconductorsPEKA, P; SCHULZ, H.-J.Solid state communications. 1994, Vol 89, Num 3, pp 225-228, issn 0038-1098Article
Energy scaling of 4.3 μm room temperature Fe:ZnSe laserMYOUNG, Nosoung; MARTYSHKIN, Dmitri V; FEDOROV, Vladimir V et al.Optics letters. 2011, Vol 36, Num 1, pp 94-96, issn 0146-9592, 3 p.Article
Results of a Si/CdTe compton telescopeOONUKI, Kousuke; TANAKA, Takaaki; WATANABE, Shin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59220J.1-59220J.11, issn 0277-786X, isbn 0-8194-5927-5, 1VolConference Paper
Relationship between lattice energy and an ionic ratio in II-VI and III-V semiconductorsKOH, A. K.Physica status solidi. B. Basic research. 1998, Vol 209, Num 1, pp 25-27, issn 0370-1972Article
Optical spectra of ultrathin II-VI quantum wellsFANG YANG; HENDERSON, B; O'DONNELL, K. P et al.Solid state communications. 1993, Vol 88, Num 9, pp 687-691, issn 0038-1098Article
The analysis of methods for creating watermarks on CDsKRYUCHYN, Andriy A; PETROV, Viacheslav V; KOSTYUKEVYCH, Sergiy Al et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 56540M.1-56540M.7, issn 0277-786X, isbn 0-8194-5961-5, 1VolConference Paper
Intrinsic defects in II-VI semiconductorsWATKINS, G. D.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 338-344, issn 0022-0248Conference Paper
Transition-metal impurities in II-VI semiconductors : characterization and switching of charge statesKREISSL, J; SCHULZ, H.-J.Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 239-249, issn 0022-0248Conference Paper
Model for DX centres : results for donors in II-VI semiconductorsBIERNACKI, S. W.Solid state communications. 1993, Vol 88, Num 5, pp 365-368, issn 0038-1098Article
Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/SiTIAN LAN; SHUAI LIU; HUI WANG et al.Optics letters. 2011, Vol 36, Num 1, pp 25-27, issn 0146-9592, 3 p.Article
ICP etching of ZnO in BCl3/SF6 gas mixturesNORDHEDEN, Karen J; PATHAK, Bogdan A; ALEXANDER, John L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7217, issn 0277-786X, isbn 978-0-8194-7463-6 0-8194-7463-0, 1Vol, 72170Q.1-72170Q.5Conference Paper
THz radiation from a DARC source via a laser-produced relativistic ionization frontOHATA, Nobuo; YAEGASHI, Kenta; KUN LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67720V.1-67720V.6, issn 0277-786X, isbn 978-0-8194-6932-8, 1VolConference Paper
Preparation of ZnO films in sol-gel method using novel monomersJAYATISSA, Ahalapitiya H; KUN GUO; JAYASURIYA, Ambalangodage C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60021B.1-60021B.7, issn 0277-786X, isbn 0-8194-6026-5, 1VolConference Paper
Determination of melting points for A2B6 compoundsVASILYEVA, I. G; BELYAEVA, E. I; GIBNER, Ya. I et al.Journal of thermal analysis and calorimetry. 1998, Vol 52, Num 2, pp 403-412, issn 1388-6150Article
Status of II-VI molecular-beam epitaxy technologyWU, O. K; RAJAVEL, R. D; JENSEN, J. E et al.Materials chemistry and physics. 1996, Vol 43, Num 2, pp 103-107, issn 0254-0584Article
Doping limitations in wide gap II-VI compounds by Fermi level pinningFASCHINGER, W; FERREIRA, S; SITTER, H et al.Journal of crystal growth. 1995, Vol 151, Num 3-4, pp 267-272, issn 0022-0248Article
Wide band gap II-VI semiconductors: growth, characterization and applications, Warsaw, 4-8 September 2006MYCIELSKI, A; GODLEWSKI, M; ZAKRZEWSKI, A. J et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 5, issn 0370-1972, 315 p.Conference Proceedings
Pulsed laser deposition of II-VI semiconductor thin films and their layered structuresOSZWALDOWSKI, M; BERUS, T; RZESZUTEK, J et al.Journal of alloys and compounds. 2004, Vol 371, pp 164-167, issn 0925-8388, 4 p.Conference Paper
Spin-flip Raman scattering studies of II-VI heterostructuresDAVIES, J. J; WOLVERSON, D; KARIMOV, O. Z et al.Journal of crystal growth. 2000, Vol 214-15, pp 616-624, issn 0022-0248Conference Paper
Activation of shallow dopants in II-VI compoundsWALUKIEWICZ, W.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 244-247, issn 0022-0248Conference Paper
Magnetic or nonmagnetic behavior of isolated scandium ions in II-VI compoundsSCHUMANN, D; MAHNKE, H.-E; SPELLMEYER, B et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 910-912, issn 0022-0248Conference Paper
Laterally Emitted Surface Second Harmonic Generation in a Single ZnTe NanowireWEIWEI LIU; KAI WANG; ZHE LIU et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4224-4229, issn 1530-6984, 6 p.Article