Etude, réalisation et mesure de guides optiques monomodes en matériaux semiconducteurs III-V = Analysis, realization and measurement of single-mode waveguides on III-V semiconductors materialsHerve-Gruyer, Guillaume; Brun, Alain.1990, 378 p.Thesis

Vibrations in cylindrical shells with transverse elastic isotropy: Application to III-V nitride nanotubesVELASCO, V. R; MUNOZ, M. C.Surface science. 2009, Vol 603, Num 19, pp 2950-2957, issn 0039-6028, 8 p.Article

Optical filter based on two coupled PhC GaAs-membranesSTOMEO, Tiziana; GRANDE, Marco; RAINO, Gabriele et al.Optics letters. 2010, Vol 35, Num 3, pp 411-413, issn 0146-9592, 3 p.Article

LATTICE MATCH IN THE HETEROEPITAXY OF III-V COMPOUND ALLOYSMORIIZUMI T; TAKAHASHI K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4606-4608; BIBL. 10 REF.Serial Issue

Effects of EL2 deep level in GaAs photoconductive switchSHI, Wei; LIU, Rui; WANG, Jing-Li et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7385, issn 0277-786X, isbn 978-0-8194-7666-1 0-8194-7666-8, 73851R.1-73851R.7Conference Paper

Basic III-V nitride research - past, present and futureMONEMAR, B.Journal of crystal growth. 1998, Vol 189-90, pp 1-7, issn 0022-0248Conference Paper

Identification of the active photo-excited carrier in reverse biased quantum dot resonant tunneling diodeWANGPING WANG; WENXIN WANG; HONG CHEN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 76581C.1-76581C.7, 2Conference Paper

Inconsistency of standard k.p band parametersSERRE, Marc-Henri; FISHMAN, Guy; DROUHIN, Henri-Jean et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61951B.1-61951B.6, issn 0277-786X, isbn 0-8194-6251-9, 1VolConference Paper

Contribution à l'étude théorique du fonctionnement de structures photovoltaïques à haut rendement = Contribution to the theoretical stufy of highe efficiency photovoltaic structuresRenaud, Philippe; Raymond.1992, 150 p.Thesis

L'effet Stark optique dans les semiconducteurs = The optical Stark effect in semiconductorsJoffre, Manuel; Hulin, Danièle.1989, 168 p.Thesis

The effects of trigger light pulses on the response speed of semi-insulating GaAs photoconductive switchesDAI, Hui-Ying; LI, Hong-Bo; XU, Jie et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7279, issn 0277-786X, isbn 978-0-8194-7538-1, 727916.1-727916.9Conference Paper

Enhanced second-harmonic generation from resonant GaAs gratingsDE CEGLIA, D; D'AGUANNO, G; MATTIUCCI, N et al.Optics letters. 2011, Vol 36, Num 5, pp 704-706, issn 0146-9592, 3 p.Article

Adsorption Efficiency of Cesium During the Activation Process for NEA GaAs PhotocathodeJUN NIU; GE ZHANG; YIJUN ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8205, issn 0277-786X, isbn 978-0-8194-8847-3, 82050P.1-82050P.6Conference Paper

Demonstration of 256x256 dual-band QWIP infrared FPAsCASTELEIN, P; GUELLEC, F; ROTHAN, F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 804-815, issn 0277-786X, isbn 0-8194-5768-X, 2Vol, 12 p.Conference Paper

Relationship between lattice energy and an ionic ratio in II-VI and III-V semiconductorsKOH, A. K.Physica status solidi. B. Basic research. 1998, Vol 209, Num 1, pp 25-27, issn 0370-1972Article

Polymer and III-V transducer platforms for integrated optical sensors : Optics in Switzerland. II: Universities and research institutesGALE, M. T; KUNZ, R. E; ZAPPE, H. P et al.Optical engineering (Bellingham. Print). 1995, Vol 34, Num 8, pp 2396-2406, issn 0091-3286Article

Terahertz metamaterials based on arrays of rolled-up gold/(In)GaAs tubesROTTLER, Andreas; BRÖLL, Markus; GERKEN, Nils et al.Optics letters. 2011, Vol 36, Num 24, pp 4797-4799, issn 0146-9592, 3 p.Article

Improved hydrogen detection sensitivity of a Pt/Ga₂O₃/GaN diodeYAN, Jheng-Tai; TSENG, Chun-Yen; CHEN, Chia-Hsun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 721612.1-721612.7Conference Paper

Diffraction effects in Auger quantitative analysis on III-V compoundsVALERI, S; DI BONA, A; NAVA, E et al.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 20-23, issn 0169-4332, AConference Paper

Electroluminescence from GaN-polymer heterojunctionCHITARA, Basant; LAL, Nidhi; KRUPANIDHI, S. B et al.Journal of luminescence. 2013, Vol 134, issn 0022-2313, p. 447Article

Threshold gain analysis in GaN-based photonic crystal surface emitting lasersWENG, Peng-Hsiang; WU, Tzeng-Tsong; LU, Tien-Chang et al.Optics letters. 2011, Vol 36, Num 10, pp 1908-1910, issn 0146-9592, 3 p.Article

Lattice dynamics study of lead chalcogenidesBENCHERIF, Y; BOUKRA, A; ZAOUI, A et al.Infrared physics & technology. 2011, Vol 54, Num 1, pp 39-43, issn 1350-4495, 5 p.Article

GaN as a detector of α-particles and neutronsPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, Av et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 79451F.1-79451F.12Conference Paper

Simulation of nipi Photovoltaic DevicesSLOCUM, M. A; FORBES, D. V; CRESS, C. D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7933, issn 0277-786X, isbn 978-0-8194-8470-3, 793305.1-793305.10Conference Paper

Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered dopingDOLGUIKH, M. V; MURAVJOV, A. V; PEALE, R. E et al.SPIE proceedings series. 2005, pp 593117.1-593117.9, isbn 0-8194-5936-4, 1VolConference Paper