kw.\*:("Semiconducteur amorphe")
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The science of atomic engineering of chalcogenide glasses : Amorphous semiconductors and phase-change materialsOVSHINSKY, Stanford.Physica status solidi. B. Basic research. 2009, Vol 246, Num 8, pp 1741-1743, issn 0370-1972, 3 p.Article
Uncooled amorphous silicon 1/4VGA IRFPA with 25 μm pixel-pitch for High End applicationsMINASSIAN, C; TISSOT, J. L; VILAIN, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 711303.1-711303.6Conference Paper
The future of phase-change semiconductor memory devicesHUDGENS, Stephen J.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2748-2752, issn 0022-3093, 5 p.Conference Paper
High-performance uncooled amorphous silicon TEC less XGA IRFPA with 17μm pixel-pitchTROUILLEAU, C; FIEQUE, B; YON, Jj et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72980Q.1-72980Q.6, 2Conference Paper
Uncooled amorphous silicon TEC-less 1 VGA IRFPA with 25μm pixel-pitch for high volume applicationsDURAND, A; MINASSIAN, C; TISSOT, J. L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 72982B.1-72982B.7, 2Conference Paper
Amorphous and Nanocrystalline Semiconductors - Science and Technology. Proceedings of the Twenty Second International Conference on Amorphous and Nanocrystalline SemiconductorsJournal of non-crystalline solids. 2008, Vol 354, Num 19-25, issn 0022-3093, 863 p.Conference Proceedings
On-chip parametric amplification with 26.5 dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguidesKUYKEN, Bart; CLEMMEN, Stéphane; SHANKAR KUMAR SELVARAJA et al.Optics letters. 2011, Vol 36, Num 4, pp 552-554, issn 0146-9592, 3 p.Article
Structure électronique des alliages semi-conducteurs a-Si1-xSnx et a-Si1-xGex : H par spectroscopies X et électroniqueArdelean, Ileana; Senemaud, Christiane.1989, 209 p.Thesis
Potential of carbon nanotubes films for infrared bolometersKOECHLIN, C; MAINE, S; RENNESSON, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 794521.1-794521.8Conference Paper
The optical band gap problem in amorphous semiconductors. A perspectiveAL-ANI, S. K. J; IBRAHIM, A.World renewable energy congress. 2000, pp 1916-1920, isbn 0-080-43865-2, 4VolConference Paper
A measurement set-up for photoconductivity decay experimentsPISARKIEWICZ, T; KUTA, S.Measurement science & technology (Print). 1998, Vol 9, Num 6, pp 1007-1009, issn 0957-0233Article
Two-dimensional modeling of the back amorphous-crystalline silicon heterojunction (BACH) photovoltaic deviceCHOWDHURY, Zahidur R; CHUTINAN, Alongkarn; GOUGAM, Adel B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7750, issn 0277-786X, isbn 978-0-8194-8241-9, 77502V.1-77502V.7Conference Paper
First demonstration of 25 μm pitch uncooled amorphous silicon microbolometer IRFPA at LETI-LIRYON, J. J; ASTIER, A; BISOTTO, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 432-440, issn 0277-786X, isbn 0-8194-5768-X, 2Vol, 9 p.Conference Paper
35 μm pitch at ULIS, a breakthroughTROUILLEAU, C; CRASTES, A; LEGRAS, O et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 578-585, issn 0277-786X, isbn 0-8194-5768-X, 2Vol, 8 p.Conference Paper
Thermally stimulated currents in amorphous semiconductorsARKHIPOV, V. I; ADRIAENSSENS, G. J.Journal of non-crystalline solids. 1995, Vol 181, Num 3, pp 274-282, issn 0022-3093Article
Optical characterization of amorphous thin-film solar cellsDEMICHELIS, F; MINETTI-MEZZETTI, E; TAGLIAFERRO, A et al.Photovoltaic solar energy conference. 5. 1984, pp 759-763Conference Paper
1024 x 768 XGA Uncooled Camera Core achieves new levels of performance in a small packageALICANDRO, C. J; DEMARCO, R. W.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8012, issn 0277-786X, isbn 978-0-8194-8586-1, 80121H.1-80121H.6, 2Conference Paper
High performance Uncooled amorphous silicon VGA IRFPA with 17μm pixel-pitchTISSOT, J. L; DURAND, A; GARRET, Th et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7660, issn 0277-786X, isbn 978-0-8194-8124-5, 76600T.1-76600T.7, 2Conference Paper
Infrared Activity of Crystalline Silicon and Amorphous SiliconSHUANG LIU; WEI CHEN; JIANING ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 765831.1-765831.6, 2Conference Paper
CCD digital radiography systemYI WANG; XI KANG; YUANJING LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7384, issn 0277-786X, isbn 978-0-8194-7665-4 0-8194-7665-X, 73842A.1-73842a.6, 2Conference Paper
Catalyst-free growth of amorphous silicon nanowires by laser ablationKOKAI, F; INOUE, S; HIDAKA, H et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 112, Num 1, pp 1-7, issn 0947-8396, 7 p.Article
Uncooled microbolometer detector : Recent developments at UlisFIEQUE, B; TISSOT, J. L; TROUILLEAU, C et al.Infrared physics & technology. 2007, Vol 49, Num 3, pp 187-191, issn 1350-4495, 5 p.Conference Paper
Optical spectral characteristics of thin-film constructions on the basis of hydrogenated amorphous siliconBYKOV, M. A; MAZINOV, A. S.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60230Q.1-60230Q.9, issn 0277-786X, isbn 0-8194-6054-0, 1VolConference Paper
Rigorous modeling of recombination under double injection in amorphous films : An example of the stiff problemSCHAUER, F; WEITER, M.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 413-419, issn 1062-3701Article
Microphysical analysis of the magnetooptical interband effects of amorphous semiconductor filmsKESSLER, F. R; SCHULZ, R; SIEVERS, B et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp 765-773, issn 0370-1972Article