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Results 1 to 25 of 3486

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A one-pot method to prepare N-doped titania hollow spheres with high photocatalytic activity under visible lightYANHUI AO; JINGJING XU; SONGHE ZHANG et al.Applied surface science. 2010, Vol 256, Num 9, pp 2754-2758, issn 0169-4332, 5 p.Article

The use of a perylenediimide derivative as a dopant in hole transport layer of an organic light emitting deviceONER, Ilker; VARLIKLI, Canan; ICLI, Siddik et al.Applied surface science. 2011, Vol 257, Num 14, pp 6089-6094, issn 0169-4332, 6 p.Article

Multi-ability ferrimagnetic semiconductor module for use as a protection and supersonic environmental monitor in the thyristor systemSEKI, K; SHIDA, J.-I; MATSUKI, H et al.IEEE transactions on power electronics. 1991, Vol 6, Num 4, pp 630-635, issn 0885-8993Article

First principles study of the adsorption of a NO molecule on N-doped anatase nanoparticlesJUAN LIU; QIN LIU; PENGFEI FANG et al.Applied surface science. 2012, Vol 258, Num 20, pp 8312-8318, issn 0169-4332, 7 p.Article

Synthesis and characterization of fullerene derivatives with perfluoroalkyl groupsXUEMEI WANG; YUNLONG GUO; YI XIAO et al.Journal of material chemistry. 2009, Vol 19, Num 20, pp 3258-3262, issn 0959-9428, 5 p.Article

Comment on second-order piezoresistance coefficients of n-type siliconOHMURA, Y; MORINAGA, W.Japanese journal of applied physics. 1996, Vol 35, Num 3A, pp L280-L281, issn 0021-4922, 2Article

A new analytical expression for the interface index of metal-Schottky contacts on semiconductorsSZE, J. J; CHENG, H. C.Solid-state electronics. 1995, Vol 38, Num 5, pp 1059-1063, issn 0038-1101Article

Electrical and photovoltaic characteristics of sodium copper chlorophyllin/n-type silicon heterojunctionsFARAG, A. A. M.Applied surface science. 2009, Vol 255, Num 9, pp 4938-4943, issn 0169-4332, 6 p.Article

Factors in electrochemical nanostructure fabrication using electron-beam induced carbon maskingDJENIZIAN, T; SANTINACCI, L; SCHMUKI, P et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 3, pp G175-G180, issn 0013-4651Article

Different location of photo- and electroluminescence in n-type porous siliconBABANOV, YU. E; BUCHIN, E. YU; PROKAZNIKOV, A. V et al.Physica status solidi. A. Applied research. 1997, Vol 161, Num 1, pp R1-R2, issn 0031-8965Article

Photocatalytic activity of N-doped anatase grown in the grain boundaries of dense TiN1-x bulks by oxidation with H2O2SUAREZ-VAZQUEZ, Santiago I; NANKO, Makoto.Applied surface science. 2014, Vol 307, pp 401-406, issn 0169-4332, 6 p.Article

Density functional theory calculations on the adsorption of formaldehyde and other harmful gases on pure, Ti-doped, or N-doped graphene sheetsZHANG, Hong-Ping; LUO, Xue-Gang; LIN, Xiao-Yang et al.Applied surface science. 2013, Vol 283, pp 559-565, issn 0169-4332, 7 p.Article

Different morphology aspects of n-type porous siliconBUCHIN, E. YU; CHURILOV, A. B; PROKAZNIKOV, A. V et al.Applied surface science. 1996, Vol 102, pp 431-435, issn 0169-4332Conference Paper

Comparison of the water effect on the resistance of different semiconducting metal oxidesRETI, F; FLEISCHER, M; GERBLINGER, J et al.Sensors and actuators. B, Chemical. 1995, Vol 26, Num 1-3, pp 103-107, issn 0925-4005Conference Paper

Excitation wavelength dependences of terahertz emission from surfaces of InSb and InAsBICIUNAS, A; MALEVICH, Y. V; KROTKUS, A et al.Electronics letters. 2011, Vol 47, Num 21, pp 1186-1187, issn 0013-5194, 2 p.Article

Fast thermal nanoimprint lithography by a stamp with integrated heaterTONNEN, Massimo; MALUREANU, Radu; PEDERSEN, Rasmus Haugstrup et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1229-1232, issn 0167-9317, 4 p.Conference Paper

Scanning capacitance microscopy study of carrier depletion within grains of n-type polycrystalline siliconNAITOU, Y; OGISO, H; KAMOHARA, S et al.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 1117-1121, issn 0142-2421, 5 p.Conference Paper

Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETsKELLY, D. Q; DEY, S; ONSONGO, D et al.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1033-1040, issn 0026-2714, 8 p.Article

Characterization of undoped and nitrogen-doped 4H-SiC thin films by CVD from bis(trimethylsilylmethane) precursorJAE KYEONG JEONG; HO KEUN SONG; MYUNG YOON UM et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 4, pp G252-G256, issn 0013-4651Article

Thermoelectric power studies of Ca-Co ferritesRAVINDER, D; RAVI KUMAR, G; VENUDHAR, Y. C et al.Journal of alloys and compounds. 2004, Vol 368, pp 38-43, issn 0925-8388, 6 p.Article

Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon filmsLEE, M. Z; CHANG, Y. A; LEE, Chung-Len et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 1, pp G28-G32, issn 0013-4651Article

The n-type metal-oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage currentTOUHAMI, A; BOUHDADA, A.Semiconductor science and technology. 2002, Vol 17, Num 12, pp 1272-1277, issn 0268-1242, 6 p.Article

High pressure Raman studies on n-GaAsVARANDANI, D; DILAWAR, N; CHAKRABORTY, B. R et al.Journal of materials science letters. 2001, Vol 20, Num 1, pp 5-7, issn 0261-8028Article

Photoconductivity of Ge1-xSix single crystals in the range 115-300 KBAKIROV, M. Ya; SHAKHBAZOVA, R. V.Inorganic materials. 2000, Vol 36, Num 2, pp 94-96, issn 0020-1685Article

Ga2O3 thin films for high-temperature gas sensorsOGITA, M; SAIKA, N; NAKANISHI, Y et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 188-191, issn 0169-4332Conference Paper

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