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Results 1 to 25 of 93633

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State of the art program on compound semiconductors XL; Narrow bandgap optoelectronic materials and devices II (San Antonio TX 9-14 May 2004)Buckley, D.N; Chang, P.C; Fox, P.D et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-407-1, IX, 282 p, isbn 1-56677-407-1Conference Proceedings

State-of-the-art program on compound semiconductors XLI; Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004)Ng, H.M; Baca, A.G.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-419-5, XII, 600 p, isbn 1-56677-419-5Conference Proceedings

The preparation of large semiconductor clusters via the pyrolysis of a molecular precursorBRENNAN, J. G; SIEGRIST, T; CARROLL, P. J et al.Journal of the American Chemical Society. 1989, Vol 111, Num 11, pp 4141-4143, issn 0002-7863, 3 p.Article

First Gerischer Symposium - Semiconductor ElectrochemistryALLONGUE, P; KOLB, D. M; WILLIG, F et al.Electrochimica acta. 2000, Vol 45, Num 28, issn 0013-4686, 179 p.Conference Proceedings

The future of semiconductor manufacturingPILLAI, Devadas.IEEE robotics & automation magazine. 2006, Vol 13, Num 4, pp 16-24, issn 1070-9932, 9 p.Article

Optical bistability in bulk ZnSe due to increasing absorption and self-focusingTAGHIZADEH, M. R; JANOSSY, I; SMITH, S. D et al.Applied physics letters. 1985, Vol 46, Num 4, pp 331-333, issn 0003-6951Article

Excited state localisation cascades in inorganic semiconductor nanoparticlesZWIJNENBURG, Martijn A.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 26, pp 11119-11127, issn 1463-9076, 9 p.Article

2006 ROCS (Reliability of Compound Semiconductors) WorkshopERSLAND, Peter; MENOZZI, Roberto.Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1156-1193, issn 0026-2714, 37 p.Conference Paper

Selection of Papers From the 2007 Semiconducting and Insulating Materials Conference (SIMC-XIV)WANG, Zhiming M; KIESEL, Peter.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, issn 0957-4522, 241 p.Conference Proceedings

Semiconductor photodetectors III (25 January 2006, San Jose, California, USA)Cohen, Marshall J; Dereniak, Eustace L.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6161-X, 1Vol, pagination multiple, isbn 0-8194-6161-XConference Proceedings

Small-sized semiconductor storage subsystem (H-6916-1/5)OKA, T; HASHIMOTO, T.Hitachi review. 1988, Vol 37, Num 5, pp 295-302, issn 0018-277XArticle

Propriétés catalytiques des semi-conducteurs compensésVOL'KENSHTEJN, F. F; KULIKOVA, E. V.Žurnal fizičeskoj himii. 1986, Vol 60, Num 2, pp 453-456, issn 0044-4537Article

Fine grinding of silicon wafers: A mathematical model for grinding marksCHIDAMBARAM, S; PEI, Z. J; KASSIR, S et al.International journal of machine tools & manufacture. 2003, Vol 43, Num 15, pp 1595-1602, issn 0890-6955, 8 p.Article

RNA-templated semiconductor nanocrystalsNAN MA; DOOLEY, Chad J; KELLEY, Shana O et al.Journal of the American Chemical Society. 2006, Vol 128, Num 39, pp 12598-12599, issn 0002-7863, 2 p.Article

Historical review of compound semiconductor reliabilityROESCH, William J.Microelectronics and reliability. 2006, Vol 46, Num 8, pp 1218-1227, issn 0026-2714, 10 p.Conference Paper

Explosive systems utilizing semiconductor bridge, SCB, technologyBICKES, R. W.Propellants, explosives, pyrotechnics. 1996, Vol 21, Num 3, pp 146-149, issn 0721-3115Article

Semiconductor manufacturing education at San Jose State UniversityGWOZDZ, P. S.IEEE transactions on semiconductor manufacturing. 1992, Vol 5, Num 2, pp 153-156, issn 0894-6507Article

Epitaxial films of semiconducting FeSi2 on (001) siliconMAHAN, J. E; GEIB, K. M; ROBINSON, G. Y et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2126-2128, issn 0003-6951Article

Grain boundary observation in polycrystalline CdSe by photoelectrochemical etching techniquesSUGIURA, T; HIDA, M; MINOURA, H et al.Applied physics letters. 1990, Vol 56, Num 20, pp 1954-1956, issn 0003-6951Article

Configuration of ferroelectric domains in semiconducting BaTiO3 ceramicsKASTNER, G; HILARIUS, V; WAGNER, R et al.Journal of materials science letters. 1989, Vol 8, Num 8, pp 959-960, issn 0261-8028, 2 p.Article

Optical switching in the semiconductor directional coupler with saturated gainHWU, R. J.Journal of applied physics. 1989, Vol 65, Num 5, pp 2137-2139, issn 0021-8979, 3 p.Article

Tailored semiconductor-receptor colloids: improved photosensitized H2 evolution from water with TiO2-β-cyclodextrin colloidsWILLNER, I; EICHEN, Y; FRANK, A. J et al.Journal of the American Chemical Society. 1989, Vol 111, Num 5, pp 1884-1886, issn 0002-7863, 3 p.Article

The influence of impurities on the dislocation splitting in semiconductorsFILIPPOV, A. P.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp 83-88, issn 0031-8965Article

Interaction acoustooptique des bruits optiques provenant d'une ouverture angulaire large dans le niobate de lithiumZADORIN, A. S; SHARANGOVICH, S. N.Optika i spektroskopiâ. 1988, Vol 65, Num 3, pp 726-731, issn 0030-4034Article

Ballistic injection devices in semiconductorsLEVI, A. F. J; HAYES, J. R; BHAT, R et al.Applied physics letters. 1986, Vol 48, Num 23, pp 1609-1611, issn 0003-6951Article

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