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On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Fabrication of strained Si/Strained SiGe/Strained si heterostructures on insulator by a bond and etch-back techniqueABERG, I; OLUBUVIDE, O. O; LI, J et al.IEEE international SOI conference. 2004, pp 35-36, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Generation and integration of scalable bipolar compact modelsSHERIDAN, David C; MURTY, Ramana M; NEWTON, Kim M et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 132-139, isbn 0-7803-8618-3, 1Vol, 8 p.Conference Paper

A 108Gb/s 4:1 Multiplexer in 0.13μm SiGe-bipolar technologyMEGHELLI, Mounir.IEEE International Solid-State Circuits Conference. 2004, pp 236-237, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOSJUNG, B; HARJANI, R.IEEE International Solid-State Circuits Conference. 2004, pp 178-179, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Collector vertical scaling and performance tradeoffs in 300 GHz sige HBTSRIEH, J.-S; KHATER, M; SCHONENBERG, K. T et al.DRC : Device research conference. 2004, pp 235-236, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Experimental verification of substrate coupling in a high-gain 30 Gb/s SiGe amplifierSTEINER, W; REIN, H.-M; BERNTGEN, J et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 273-276, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Analysis of Thermoelectric Properties of AlInN Semiconductor AlloysJING ZHANG; HUA TONG; HERBSOMMER, Juan A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7933, issn 0277-786X, isbn 978-0-8194-8470-3, 79330X.1-79330X.6Conference Paper

High yield reduced process tolerance self-aligned double mesa process technology for SiGe power HBTsLEE, Kok-Yan; JOHNSON, Brian N; MOHAMMADI, Saeed et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 963-966Conference Paper

Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTsGUOFU NIU; KEJUN XIA; SHERIDAN, David et al.IEEE radio frequency integrated circuits symposium. 2004, pp 615-618, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Ratio based direct extraction of small-signal parameters for SiGe HBTsKEJUN XIA; GUOFU NIU; SHERIDAN, David et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 144-147, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Noise performance of a low base resistance 200 GHz SiGe technologyGREENBERG, D. R; JAGANNATHAN, B; SWEENEY, S et al.IEDm : international electron devices meeting. 2002, pp 787-790, isbn 0-7803-7462-2, 4 p.Conference Paper

COM2 Enhanced Graded Base SiGe technology for high speed applicationsIVANOV, T; CARROLL, Michael; ESRY, T et al.Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium. 2002, pp 337-340, issn 1529-2517, isbn 0-7803-7246-8, 4 p.Conference Paper

Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS deviceLEE, K. L; CHU, J; OTT, J et al.IEDm : international electron devices meeting. 2002, pp 379-382, isbn 0-7803-7462-2, 4 p.Conference Paper

Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOSSUDIRGO, Stephen; VEGA, Reinaldo; NANDGAONKAR, Rohit P et al.DRC : Device research conference. 2004, pp 109-110, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

SiGe HBT scaling implications on 1/f noise and oscillator phase noiseGUOFU NIU; JIN TANG; ZHIMING FENG et al.IEEE radio frequency integrated circuits symposium. 2004, pp 299-302, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Sige HBT technology with f_max/f_T = 350/300 GHz and gate delay below 3.3 psKHATER, M; RIEH, J.-S; SCHONENBERG, K. T et al.International Electron Devices Meeting. 2004, pp 247-250, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structuresMIZUNO, T; SUGIYAMA, N; TEZUKA, T et al.Symposium on VLSI Technology. sd, pp 202-203, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Bowing Character in Wurtzite ZnO-Based Ternary AlloysTIT, Nacir; DAGHER, Sawsan; AYESH, Ahmad et al.Journal of electronic materials. 2012, Vol 41, Num 11, pp 3111-3118, issn 0361-5235, 8 p.Article

Influence of the extrinsic base on the base current kink in SiGe BJTsSADOVNIKOV, Alexei; KRAKOWSKI, Tracey; EL-DIWANY, Monir et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 320-323, issn 0169-4332, 4 p.Conference Paper

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsD'COSTA, V. R; FANG, Y.-Y; TOLLE, J et al.Thin solid films. 2010, Vol 518, Num 9, pp 2531-2537, issn 0040-6090, 7 p.Conference Paper

Epitaxial growth of fully relaxed Si_0.75Ge_0.25 on SOI substrateZHONGYING XUE; XING WEI; BO ZHANG et al.Applied surface science. 2011, Vol 257, Num 11, pp 5021-5024, issn 0169-4332, 4 p.Article

Fabrication of SiGe rings and holes on Si(001) by flash annealingPERSICHETTI, L; CAPASSO, A; SGARLATA, A et al.Applied surface science. 2013, Vol 283, pp 813-819, issn 0169-4332, 7 p.Article