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Comments on: High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mmTHAYNE, Iain G; HILL, Richard J. W; MORAN, David A. J et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1085-1086, issn 0741-3106, 2 p.Article

Submicron trenching of semiconductor nanostructuresLEE, K. Y; SMITH, T. P; FORD, C. J. B et al.Applied physics letters. 1989, Vol 55, Num 7, pp 625-627, issn 0003-6951, 3 p.Article

Improved Yield Through Use of a Scalable Parametric Measurement MacroPAULETTE BICKFORD, Jeanne; HABIB, Nazmul; GOSS, John R et al.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 2, pp 190-196, issn 0894-6507, 7 p.Conference Paper

Reliability of electron devices, failure physics and analysisSTOJADINOVIC, N. D; PECHT, M. G; CIAPPA, Mauro et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, issn 0026-2714, 626 p.Conference Proceedings

International Semiconductor Device Research Symposium 2007 - ISDRS 2007ILIADIS, Agis A; RICHTER, Curt A.Solid-state electronics. 2008, Vol 52, Num 10, issn 0038-1101, 215 p.Conference Proceedings

Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article

Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings

An assessment of approximate nonstationary charge transport models used for GaAs device modelingSANDBORN, P. A; RAO, A; BLAKEY, P. A et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1244-1253, issn 0018-9383, 10 p.Article

23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012)MENEGHESSO, G; CIAPPA, M; COVA, P et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, issn 0026-2714, 777 p.Conference Proceedings

NUMERICAL MODELING OF POWER MOSFETSNAVON DH; WANG CT.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 287-290; BIBL. 13 REF.Article

Practical extensions to cycle time approximations for the G/G/m-queue with applicationsMORRISON, James R; MARTIN, Donald P.IEEE transactions on automation science and engineering. 2007, Vol 4, Num 4, pp 523-532, issn 1545-5955, 10 p.Article

Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulationHONG, Sung-Min; OH, Yongho; KIM, Namhyung et al.Solid-state electronics. 2013, Vol 79, pp 152-158, issn 0038-1101, 7 p.Article

TWO-DIMENSIONAL NUMERICAL SIMULATION OF BIPOLAR SEMICONDUCTOR DEVICES TAKING INTO ACCOUNT HEAVY DOPING EFFECTS AND FERMI STATISTICSPOLSKY BS; RIMSHANS JS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 275-279; BIBL. 24 REF.Article

Fast and efficient multi-domain system simulation based on coupled heterogeneous model structuresROSU, Marius; KHER, Sameer; BELEY, Jean-Daniel et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7977, issn 0277-786X, isbn 978-0-8194-8539-7, 797722.1-797722.10, 2Conference Paper

Statistics in the semiconductor industry : a competitive necessitySPENCER, W. J; TOBIAS, P. A.The American statistician. 1995, Vol 49, Num 3, pp 245-249, issn 0003-1305Article

A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article

Nonpolar and Semipolar Group III Nitride-Based MaterialsSPECK, J. S; CHICHIBU, S. F.MRS bulletin. 2009, Vol 34, Num 5, issn 0883-7694, [49 p.]Serial Issue

Noise in devices and circuits II (Maspalomas, 26-28 May 2004)Danneville, François; Bonani, Fabrizio; Deen, M. Jamal et al.SPIE proceedings series. 2004, isbn 0-8194-5396-X, XXXI, 588 p, isbn 0-8194-5396-XConference Proceedings

High-rare deposition of hydrogenated amorphous silicon films and devicesLUFT, W.Applied physics communications. 1988, Vol 8, Num 4, pp 239-298, issn 0277-9374Article

The ROCS Workshop and 25 years of compound semiconductor reliabilityROESCH, William J.Microelectronics and reliability. 2011, Vol 51, Num 2, pp 188-194, issn 0026-2714, 7 p.Conference Paper

Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article

A Self-Amplifying Four-Transistor MOSFET Mismatch Test StructureMCANDREW, Colin C; ZUNINO, Mike; BRASWELL, Brandt et al.IEEE transactions on semiconductor manufacturing. 2013, Vol 26, Num 3, pp 273-280, issn 0894-6507, 8 p.Conference Paper

Discrete dopant effects on statistical variation of random telegraph signal magnitudeSONODA, Kenichiro; ISHIKAWA, Kiyoshi; EIMORI, Takahisa et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 1918-1925, issn 0018-9383, 8 p.Article

A Probe-Lift MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime ExtractionMARINELLA, Matthew. J; SCHRODER, Dieter K; CHUNG, Gilyong Y et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 565-571, issn 0018-9383, 7 p.Article

Evaluation of thermal performance of all-GaN power module in parallel operationCHOU, Po-Chien; STONE CHENG; CHEN, Szu-Hao et al.Applied thermal engineering. 2014, Vol 70, Num 1, pp 593-599, issn 1359-4311, 7 p.Article

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