kw.\*:("Semiconductor devices")
Results 1 to 25 of 4534
Selection :
Source/drain engineering for MOSFETs with embedded-Si:C technologyITOKAWA, Hiroshi; YASUTAKE, Nobuaki; KUSUNOKI, Naoki et al.Applied surface science. 2008, Vol 254, Num 19, pp 6135-6139, issn 0169-4332, 5 p.Conference Paper
30 Years of accomplishments in compound semiconductor materials and devices attributable to Prof. Lester F. EastmanYODER, Max N.IEEE Lester Eastman conference on high performance devices. 2002, pp 34-39, isbn 0-7803-7478-9, 6 p.Conference Paper
Three decades of our graduate research and education in compound semiconductor materials and devicesEASTMAN, Lester F.IEEE Lester Eastman conference on high performance devices. 2002, pp 4-9, isbn 0-7803-7478-9, 6 p.Conference Paper
100 kV solid-state switch for fusion heating systemsBEAUMONT, B; BERTRAND, E; BRUGNETTI, R et al.Fusion engineering and design. 2005, Vol 75-79, pp 1281-1285, issn 0920-3796, 5 p.Conference Paper
Motorola Workshop on Computational Mterials and ElectronicsPhysica status solidi. B. Basic research. 2001, Vol 226, Num 1, pp 1-255, issn 0370-1972, 241 p.Conference Proceedings
ASDAM '96 International Conference on Advanced Semiconductor Devices and MicrosystemsLALINSKY, Tibor.Sensors and materials. 1998, Vol 10, Num 4, issn 0914-4935, 53 p.Conference Proceedings
Submicron trenching of semiconductor nanostructuresLEE, K. Y; SMITH, T. P; FORD, C. J. B et al.Applied physics letters. 1989, Vol 55, Num 7, pp 625-627, issn 0003-6951, 3 p.Article
NUMERICAL MODELING OF POWER MOSFETSNAVON DH; WANG CT.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 287-290; BIBL. 13 REF.Article
Evaluation of thermal performance of all-GaN power module in parallel operationCHOU, Po-Chien; STONE CHENG; CHEN, Szu-Hao et al.Applied thermal engineering. 2014, Vol 70, Num 1, pp 593-599, issn 1359-4311, 7 p.Article
Charged-coupled detector sky surveysSCHNEIDER, D. P.Proceedings of the National Academy of Sciences of the United States of America. 1993, Vol 90, Num 21, pp 9751-9753, issn 0027-8424Conference Paper
Step and Flash Imprint Lithography for Semiconductor High Volume Manufacturing?MALLOY, M; LITT, L. C.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7637, issn 0277-786X, isbn 978-0-8194-8051-4 0-8194-8051-7, 763706.1-763706.11Conference Paper
Depth profiling of emerging materials for semiconductor devicesRONSHEIM, P. A.Applied surface science. 2006, Vol 252, Num 19, pp 7201-7204, issn 0169-4332, 4 p.Conference Paper
Coupled quantum dots as artificial moleculesKOUWENHOVEN, L.Science (Washington, D.C.). 1995, Vol 268, Num 5216, pp 1440-1441, issn 0036-8075Article
Professor Lester F. EastmanSHUR, Michael.IEEE Lester Eastman conference on high performance devices. 2002, pp 1-3, isbn 0-7803-7478-9, 3 p.Conference Paper
Nanometer resolution elemental analysis using FE-TEMISAKOZAWA, S; ICHIHASHI, M.Hitachi review. 1994, Vol 43, Num 4, pp 187-190, issn 0018-277XArticle
Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings
23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012)MENEGHESSO, G; CIAPPA, M; COVA, P et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, issn 0026-2714, 777 p.Conference Proceedings
Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article
Self-Consistent Optimization of Multi-Quantum Well Structures by a Genetic AlgorithmPASSARO, Angelo; YUJI TANAKA, Roberto; MURARO, Ademar et al.IEEE transactions on magnetics. 2010, Vol 46, Num 8, pp 2759-2762, issn 0018-9464, 4 p.Conference Paper
Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulationHONG, Sung-Min; OH, Yongho; KIM, Namhyung et al.Solid-state electronics. 2013, Vol 79, pp 152-158, issn 0038-1101, 7 p.Article
A Probe-Lift MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime ExtractionMARINELLA, Matthew. J; SCHRODER, Dieter K; CHUNG, Gilyong Y et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 565-571, issn 0018-9383, 7 p.Article
Enhanced optical performance by energetic hydrogen passivation at Si/oxide interfaceHO, W. S; DENG, Y; CHEN, Y.-Y et al.Thin solid films. 2011, Vol 520, Num 1, pp 448-451, issn 0040-6090, 4 p.Article
Effect of die metallization layer ageing in the case of power semiconductor devices : COMPOSANTS ET SYSTEMES INTEGRES EN ELECTRONIQUE DE PUISSANCEPIETRANICO, Sylvain; POMMIER, Sylvie; LEFEBVRE, Stéphane et al.European journal of electrical engineering. 2011, Vol 14, Num 5, pp 569-585, issn 2103-3641, 17 p.Conference Paper
Integrating semiconductor device characterisation and reliability into electrical engineering educationYUAN, Jiann S; HONG YANG.International journal of electrical engineering education. 2006, Vol 43, Num 1, pp 67-79, issn 0020-7209, 13 p.Article
Low-Temperature Nonthermal Population of InAs-GaAs Quantum DotsO'DRISCOLL, Ian; SMOWTON, Peter M; BLOOD, Peter et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 3-4, pp 380-387, issn 0018-9197, 8 p.Article