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Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article

Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article

Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiersZIMMERMAN, Jeramy; BROWN, Elliott; GOSSARD, Art et al.DRC : Device research conference. 2004, pp a6-a7, isbn 0-7803-8284-6, 1VolConference Paper

Effet du profil de la distribution des impuretés dans la couche de base d'une structure diode à semiconducteur sur l'écoulement du courant en régime balistique ou quasi balistiqueBANNOV, N. A; RYZHIJ, V. I.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 148-151, issn 0544-1269Article

ELECTRON-BOMBARDED SEMICONDUCTOR: (EBS) SWITCHMACDONALD RI; HUM RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 609-611; BIBL. 9 REF.Article

ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article

SUR UNE POSSIBILITE D'EVALUER LES PROPRIETES DE RECOMBINAISON DES CONTACTS ET LEUR EFFET SUR LA CARACTERISTIQUE DE DIODES A SEMICONDUCTEURSGEJFMAN EM; GREKHOV IV; KOSTINA LS et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 386-391; BIBL. 6 REF.Article

DIRECT DETECTION OF MICROWAVE SIGNALS BY SOLID STATE DIODES.GREEN HE.1977; ELECTR. ENGNG TRANS.; AUSTRAL.; DA. 1977; VOL. 13; NO 2; PP. 63-68; BIBL. 7 REF.Article

Investigation of field-effect transistors fabricated by metal-ion-doped nano-titania using sol-gel techniqueLIAU, Leo Chau-Kuang; CHOU, Wen-Wei.Microelectronic engineering. 2009, Vol 86, Num 3, pp 361-366, issn 0167-9317, 6 p.Article

Solid-state lighting: The future looks bright : Opening the grid across continentsPATEL, Prachi.MRS bulletin. 2011, Vol 36, Num 9, pp 678-680, issn 0883-7694, 3 p.Article

CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article

JUNCTION IMPEDANCE MEASUREMENTS OF DIODES BY A SIMPLIFIED LOCK-IN AMPLIFIER.JUH TZENG LUE.1977; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1977; VOL. 26; NO 4; PP. 415-419; BIBL. 5 REF.Article

EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article

PRINCIPES DE LA DETECTION.HOUZE RC.1977; TOUTE ELECTRON.; FR.; DA. 1977; NO 426; PP. 69-72Article

ANALYSE DES EFFETS DE CONVERSION DE FREQUENCE D'UNE DIODE A CARACTERISTIQUES NON LINEAIRES ARBITRAIRESMALYSHEV VA; CHERVYAKOV GG.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 3; PP. 566-573; BIBL. 8 REF.Article

COMMUTATEURS MICRO-ONDES A DIODES SEMICONDUCTRICES, ELECTRIQUEMENT COMMANDESIL'CHENKO ME; OSIPOV VG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 2; PP. 5-17; BIBL. 1 P. 1/2Article

SUR UNE METHODE DE MESURE DE LA CARACTERISTIQUE COURANT-TENSION DES DIODES A SEMICONDUCTEURSZADDEH VV; GUSEVA EA.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 1; PP. 239-240; BIBL. 1 REF.Article

ON THE MAGNETOSENSITIVITY OF SEMICONDUCTOR DIODE STRUCTURES WITH STRONG CARRIER ACCUMULATIONGILENKO MS; KARAGEORGY ALKALAEV PM; LEIDERMAN A YU et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K165-K169; BIBL. 12 REF.Article

HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR DEVICESWITTMER M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 540-542; BIBL. 17 REF.Article

Semiconductor diode lasers : a new laser light source in ophthalmologyBALLES, M. W; PULIAFITO, C. A.International ophthalmology clinics. 1990, Vol 30, Num 2, pp 77-83, issn 0020-8167Article

The width of the non-steady state transition region in deep level impurity measurementsBROTHERTON, S. D.Solid-state electronics. 1983, Vol 26, Num 10, pp 987-990, issn 0038-1101Article

Effects of thermal annealing on interface states density and ideality factor in Ni/Si(111) Schottky diodesSAHAY, P. P; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1991, Vol 29, Num 5, pp 357-361, issn 0019-5596Article

Trace analysis of microvolume gas samples: dynamic considerations for analytical accuracyMUCHA, J. A.Analytical chemistry (Washington, DC). 1985, Vol 57, Num 9, pp 1963-1969, issn 0003-2700Article

Minority carrier lifetimes using compensated differential open circuit voltage decayGREEN, M. A.Solid-state electronics. 1983, Vol 26, Num 11, pp 1117-1122, issn 0038-1101Article

OPTIMISATION ET REALISATION D'UNE PERIPHERIE PLANAR HAUTE TENSION A POCHE = OPTIMIZATION AND IMPLEMENTATION OF A HIGH VOLTAGE PLANAR PERIPHERY POCKET TYPENgo, Le Thuy; Guillemot, Nadine.1997, 172 p.Thesis

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