kw.\*:("Semiconductor diode")
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Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article
Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article
Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiersZIMMERMAN, Jeramy; BROWN, Elliott; GOSSARD, Art et al.DRC : Device research conference. 2004, pp a6-a7, isbn 0-7803-8284-6, 1VolConference Paper
Effet du profil de la distribution des impuretés dans la couche de base d'une structure diode à semiconducteur sur l'écoulement du courant en régime balistique ou quasi balistiqueBANNOV, N. A; RYZHIJ, V. I.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 148-151, issn 0544-1269Article
ELECTRON-BOMBARDED SEMICONDUCTOR: (EBS) SWITCHMACDONALD RI; HUM RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 609-611; BIBL. 9 REF.Article
ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article
SUR UNE POSSIBILITE D'EVALUER LES PROPRIETES DE RECOMBINAISON DES CONTACTS ET LEUR EFFET SUR LA CARACTERISTIQUE DE DIODES A SEMICONDUCTEURSGEJFMAN EM; GREKHOV IV; KOSTINA LS et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 386-391; BIBL. 6 REF.Article
DIRECT DETECTION OF MICROWAVE SIGNALS BY SOLID STATE DIODES.GREEN HE.1977; ELECTR. ENGNG TRANS.; AUSTRAL.; DA. 1977; VOL. 13; NO 2; PP. 63-68; BIBL. 7 REF.Article
Investigation of field-effect transistors fabricated by metal-ion-doped nano-titania using sol-gel techniqueLIAU, Leo Chau-Kuang; CHOU, Wen-Wei.Microelectronic engineering. 2009, Vol 86, Num 3, pp 361-366, issn 0167-9317, 6 p.Article
Solid-state lighting: The future looks bright : Opening the grid across continentsPATEL, Prachi.MRS bulletin. 2011, Vol 36, Num 9, pp 678-680, issn 0883-7694, 3 p.Article
CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article
JUNCTION IMPEDANCE MEASUREMENTS OF DIODES BY A SIMPLIFIED LOCK-IN AMPLIFIER.JUH TZENG LUE.1977; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1977; VOL. 26; NO 4; PP. 415-419; BIBL. 5 REF.Article
EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article
PRINCIPES DE LA DETECTION.HOUZE RC.1977; TOUTE ELECTRON.; FR.; DA. 1977; NO 426; PP. 69-72Article
ANALYSE DES EFFETS DE CONVERSION DE FREQUENCE D'UNE DIODE A CARACTERISTIQUES NON LINEAIRES ARBITRAIRESMALYSHEV VA; CHERVYAKOV GG.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 3; PP. 566-573; BIBL. 8 REF.Article
COMMUTATEURS MICRO-ONDES A DIODES SEMICONDUCTRICES, ELECTRIQUEMENT COMMANDESIL'CHENKO ME; OSIPOV VG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 2; PP. 5-17; BIBL. 1 P. 1/2Article
SUR UNE METHODE DE MESURE DE LA CARACTERISTIQUE COURANT-TENSION DES DIODES A SEMICONDUCTEURSZADDEH VV; GUSEVA EA.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 1; PP. 239-240; BIBL. 1 REF.Article
ON THE MAGNETOSENSITIVITY OF SEMICONDUCTOR DIODE STRUCTURES WITH STRONG CARRIER ACCUMULATIONGILENKO MS; KARAGEORGY ALKALAEV PM; LEIDERMAN A YU et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K165-K169; BIBL. 12 REF.Article
HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR DEVICESWITTMER M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 540-542; BIBL. 17 REF.Article
Semiconductor diode lasers : a new laser light source in ophthalmologyBALLES, M. W; PULIAFITO, C. A.International ophthalmology clinics. 1990, Vol 30, Num 2, pp 77-83, issn 0020-8167Article
The width of the non-steady state transition region in deep level impurity measurementsBROTHERTON, S. D.Solid-state electronics. 1983, Vol 26, Num 10, pp 987-990, issn 0038-1101Article
Effects of thermal annealing on interface states density and ideality factor in Ni/Si(111) Schottky diodesSAHAY, P. P; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1991, Vol 29, Num 5, pp 357-361, issn 0019-5596Article
Trace analysis of microvolume gas samples: dynamic considerations for analytical accuracyMUCHA, J. A.Analytical chemistry (Washington, DC). 1985, Vol 57, Num 9, pp 1963-1969, issn 0003-2700Article
Minority carrier lifetimes using compensated differential open circuit voltage decayGREEN, M. A.Solid-state electronics. 1983, Vol 26, Num 11, pp 1117-1122, issn 0038-1101Article
OPTIMISATION ET REALISATION D'UNE PERIPHERIE PLANAR HAUTE TENSION A POCHE = OPTIMIZATION AND IMPLEMENTATION OF A HIGH VOLTAGE PLANAR PERIPHERY POCKET TYPENgo, Le Thuy; Guillemot, Nadine.1997, 172 p.Thesis