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Results 1 to 25 of 170844

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Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurementCHUNMENG DOU; SHOJI, Tomoya; NATORI, Kenji et al.Microelectronics and reliability. 2014, Vol 54, Num 4, pp 725-729, issn 0026-2714, 5 p.Article

High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applicationsQI ZHOU; SHU YANG; WANJUN CHEN et al.Solid-state electronics. 2014, Vol 91, pp 19-23, issn 0038-1101, 5 p.Article

Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodesÖZMEN, Özge Tüzün.Microelectronics and reliability. 2014, Vol 54, Num 12, pp 2766-2774, issn 0026-2714, 9 p.Article

Mechanisms of Photoconductivity in Atomically Thin MoS2FURCHI, Marco M; POLYUSHKIN, Dmitry K; POSPISCHIL, Andreas et al.Nano letters (Print). 2014, Vol 14, Num 11, pp 6165-6170, issn 1530-6984, 6 p.Article

Pentacene organic thin-film transistors on flexible paper and glass substratesZOCCO, Adam T; HAN YOU; HAGEN, Joshua A et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 9, issn 0957-4484, 094005.1-094005.7Article

A disorder induced field effect transistor in bilayer and trilayer grapheneDONGWEI XU; HAIWEN LIU; SACKSTEDER, Vincent et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 10, issn 0953-8984, 105303.1-105303.11Article

A model for avalanche breakdown calculation in low-voltage trench power MOSFET devicesPACE, C; PIERRO, S; CILIA, V et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015007.1-015007.6Article

AlGaN/GaN Schottky Diode Fabricated by Au Free ProcessLIFANG JIA; WEI YAN; ZHONGCHAO FAN et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1235-1237, issn 0741-3106, 3 p.Article

Avalanche current read-out circuit for low-jitter parallel photon timingCROTTI, M; RECH, I; GULINATTI, A et al.Electronics letters. 2013, Vol 49, Num 16, pp 1017-1018, issn 0013-5194, 2 p.Article

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETsDOS SANTOS, Sara D; NICOLETTI, Talitha; MARTINO, Joao Antonio et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 444-450, issn 0018-9383, 7 p.Article

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?DE MICHIELIS, Luca; LATTANZIO, Livio; MOSELUND, Kirsten E et al.IEEE electron device letters. 2013, Vol 34, Num 6, pp 726-728, issn 0741-3106, 3 p.Article

High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structureFAN, Ching-Lin; LIN, Yu-Zuo; LIN, Yi-Yan et al.Organic electronics (Print). 2013, Vol 14, Num 12, pp 3147-3151, issn 1566-1199, 5 p.Article

GaN HEMTs and MMICs for space applicationsWALTEREIT, P; BRONNER, W; KÜHN, J et al.Semiconductor science and technology. 2013, Vol 28, Num 7, issn 0268-1242, 074010.1-074010.7Article

AuI···AuI interaction induced semiconducting microwires with photo- and vapor-responsive propertiesXIAOYUE MU; DONG LIU; XIAO CHENG et al.Organic electronics (Print). 2012, Vol 13, Num 3, pp 457-463, issn 1566-1199, 7 p.Article

Design and simulation of double-lightly doped MOSCNT using non-equilibrium Green's functionMOGHADAM, Narjes; AZIZIYAN, Mohammad Reza; FATHI, Davood et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 108, Num 3, pp 551-557, issn 0947-8396, 7 p.Article

Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETsAKARVARDAR, Kerem; RODGERS, Martin; JAMMY, Raj et al.IEEE electron device letters. 2012, Vol 33, Num 5, pp 631-633, issn 0741-3106, 3 p.Article

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dyeRIBIERRE, J. C; SATO, M; ISHIZUKA, A et al.Organic electronics (Print). 2012, Vol 13, Num 6, pp 999-1003, issn 1566-1199, 5 p.Article

Sub-10 nm Carbon Nanotube TransistorFRANKLIN, Aaron D; LUISIER, Mathieu; HAN, Shu-Jen et al.Nano letters (Print). 2012, Vol 12, Num 2, pp 758-762, issn 1530-6984, 5 p.Article

High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk WaferZHAI, Yujia; MATHEW, Leo; RAO, Rajesh et al.Nano letters (Print). 2012, Vol 12, Num 11, pp 5609-5615, issn 1530-6984, 7 p.Article

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devicesDE MICHIELIS, Luca; LELLINA, Matteo; PALESTRI, Pierpaolo et al.Solid-state electronics. 2012, Vol 71, pp 7-12, issn 0038-1101, 6 p.Conference Paper

Numerical investigation on the junctionless nanowire FETGNANI, E; GNUDI, A; REGGIANI, S et al.Solid-state electronics. 2012, Vol 71, pp 13-18, issn 0038-1101, 6 p.Conference Paper

One-flux theory of saturated drain current in nanoscale transistorsTANG, Ting-Wei; FISCHETTI, Massimo V; JIN, Seonghoon et al.Solid-state electronics. 2012, Vol 78, pp 115-120, issn 0038-1101, 6 p.Conference Paper

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling modelBISWAS, Arnab; SHANKAR DAN, Surya; LE ROYER, Cyrille et al.Microelectronic engineering. 2012, Vol 98, pp 334-337, issn 0167-9317, 4 p.Conference Paper

A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO2 LayerPARK, Sooyoung; BAEK, Chang-Ki; PARK, Hong-Hyun et al.IEEE transactions on nanotechnology. 2011, Vol 10, Num 4, pp 699-705, issn 1536-125X, 7 p.Article

Charge-carrier injection assisted by space-charge field in AC-driven organic light-emitting transistorsXUHAI LIU; KJELSTRUP-HANSEN, Jakob; BOUDINOV, Henri et al.Organic electronics (Print). 2011, Vol 12, Num 10, pp 1724-1730, issn 1566-1199, 7 p.Article

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