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EFFET DES CONDITIONS D'ANODISATION DE L'ANTIMONIURE D'INDIUM SUR LA CARACTERISTIQUE D'UNE STRUCTURE MOSDAVYDOV VN; LEZINA TD.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 117-122; BIBL. 21 REF.Article

Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structuresVASQUEZ, R. P; MADHUKAR, A.Applied physics letters. 1985, Vol 47, Num 9, pp 998-1000, issn 0003-6951Article

Power law broadening of charge packets at semiconductor interfacesCOOPER, J. A. JR.Applied physics letters. 1984, Vol 44, Num 2, pp 243-245, issn 0003-6951Article

Use of EOS (electrolyte/oxide/semiconductor) systems for the electrical characterization of illuminated semiconductor/dielectric interfacesDIOT, J. L; JOSEPH, J; MARTIN, J. R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1986, Vol 197, Num 1-2, pp 381-385, issn 0022-0728Article

EFFET D'UN TRAITEMENT PLASMO-CHIMIQUE SUR L'ETAT DE CHARGE DU SYSTEME DIELECTRIQUE-SILICIUMDIKAREV YU I; SAKHAROV BN; GOL'DFARB VA et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 113-116; BIBL. 16 REF.Article

Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interfaceTSAI, J. R; HO, L. W; LIN, S. H et al.International Electron Devices Meeting. 2004, pp 979-982, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiCLI, H. F; DIMITRIJEV, S; HARRISON, H. B et al.International conference on microelectronic. 1997, pp 611-612, isbn 0-7803-3664-X, 2VolConference Paper

Dimension spatiale des fluctuations statistiques du potentiel dans les structures MISGUZEV, A. A; GURTOV, V. A.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 8, pp 1367-1372, issn 0015-3222Article

Protons at the Si-SiO2 interface : a first principle investigationGODET, Julien; PASQUARELLO, Alfredo.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2035-2038, issn 0167-9317, 4 p.Conference Paper

Silicide-silicon Schottky barriersSCHMID, P. E.Helvetica Physica Acta. 1985, Vol 58, Num 2-3, pp 371-382, issn 0018-0238Article

The study of slow relaxation of charged centres in insulator-semiconductor structures using fluorescent molecule probesBESPALOV, V. A; KASHKAROV, P. K; KISELEV, V. F et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 315-326, issn 0031-8965Article

DETERMINATION DES PROPRIETES LOCALES DES COUCHES DIELECTRIQUES SUR LA SURFACE DES SEMICONDUCTEURS (GAAS-SIO2)ANTONYUK VN; DMITRUK NL; LYASHENKO VI et al.1977; POLUPROVODN., TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 25; PP. 73-80; BIBL. 17 REF.Article

INTERFACE POLARIZATION IN SILICON ON SAPPHIREKRUSIUS P; DUBE C; FREY J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 547-549; BIBL. 18 REF.Article

MIGRATION DES IONS SUR LA SURFACE DE STRUCTURES DIELECTRIQUE SEMICONDUCTEURVENKSTERN SA; KOZLOV SN.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 3; PP. 239-248; BIBL. 8 REF.Article

New nondestructive method for the investigation of insulator-semiconductor structuresBOUILLIER, G; ALQUIE, C; DREYFUS, G et al.Applied physics letters. 1985, Vol 47, Num 5, pp 506-507, issn 0003-6951Article

Surface polaritons in a SiO2/Si bilayer systemWENDLER, L; JAGER, E.Physica status solidi. B. Basic research. 1984, Vol 121, Num 2, pp K119-K124, issn 0370-1972Article

Caractéristiques de la limite des phases Si-SiO2 et mobilité superficielle des trous dans la couche d'inversionURITSKIJ, V. YA; ROMANOV, O. V; YAFYASOV, A. M et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 393-397, issn 0015-3222Article

Expansion of the electron-hole liquid plasma at GaAs surfaceKORBUTYAK, D. V; LITOVCHENKO, V. G.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 87-97, issn 0370-1972Article

Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodesNIELSEN, O. M.Journal of applied physics. 1983, Vol 54, Num 10, pp 5880-5886, issn 0021-8979Article

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

The mechanism for failure of insulator-clad silicon structures during pulsed Joule heatingVAKAROV, B. S; KORLYAKOV, A. B; SHIER, J. S et al.Soviet physics. Technical physics. 1991, Vol 36, Num 9, pp 998-1000, issn 0038-5662Article

Two-dimensional states in inversion layer on zero-gap semiconductorSTEPNIEWSKI, R.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 31, pp L853-L856, issn 0022-3719Article

An ohmic contact test using the activation energy of steady-state space-charge-limited currentNESPUREK, S; ZMESKAL, O; SCHAUER, F et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp 619-625, issn 0031-8965Article

Capture d'électrons chauds dans les structures couche épitaxique de GaAs-n-support semi-isolantVOROB'EV, YU. V; KOSTYLEV, S. A; MAKAROVA, T. F et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1784-1787, issn 0015-3222Article

On interfacial charges in the oxide layer of MIS-type Ag- and Au-n GaAs Schottky barriersVAN MEIRHAEGHE, R. L; LAFLERE, W. H; CARDON, F et al.Solid-state electronics. 1983, Vol 26, Num 12, pp 1189-1192, issn 0038-1101Article

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