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Results 1 to 25 of 13984

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Direct liquid cooling of room-temperature operated quantum cascade lasersCHEN, J. Z; LIU, Z; RUMALA, Y. S et al.Electronics Letters. 2006, Vol 42, Num 9, pp 534-535, issn 0013-5194, 2 p.Article

1.53μm GaInNAsSB laser diodes grown on GaAs(100)GUPTA, J. A; BARRIOS, P. J; ZHANG, X et al.Electronics Letters. 2005, Vol 41, Num 2, pp 71-72, issn 0013-5194, 2 p.Article

A behavioral approach to model thermal sensitivity of semiconductor lasersHABIBULLAH, Faisal; JONG WOON PARK.Optics communications. 2005, Vol 249, Num 1-3, pp 265-272, issn 0030-4018, 8 p.Article

Comparison of facet temperature and degradation of unpumped and passivated facets of al-free 940-nm lasers using photoluminescenceCHAVAN, Ashonita; RADIONOVA, Radosveta; CHARACHE, Greg W et al.IEEE journal of quantum electronics. 2005, Vol 41, Num 5, pp 630-635, issn 0018-9197, 6 p.Article

Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiencyFEEZELL, D; BUELL, D. A; COLDREN, L. A et al.Electronics Letters. 2005, Vol 41, Num 14, pp 803-804, issn 0013-5194, 2 p.Article

Estimating the parameters of semiconductor lasers based on weak optical feedback self-mixing interferometryJIANGTAO XI; YANGUANG YU; CHICHARO, Joe F et al.IEEE journal of quantum electronics. 2005, Vol 41, Num 8, pp 1058-1064, issn 0018-9197, 7 p.Article

External cavity semiconductor laser model for the strong feedback regimeRAMUNNO, L; SIPE, J. E.Journal of modern optics (Print). 2005, Vol 52, Num 10, pp 1421-1448, issn 0950-0340, 28 p.Article

Frequency response measurements for mirror image asymmetric multiple quantum-well lasersVANDERMEER, Aaron D; CASSIDY, Daniel T.IEEE journal of quantum electronics. 2005, Vol 41, Num 7, pp 932-936, issn 0018-9197, 5 p.Article

High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sourcesDEUBERT, S; DEBUSMANN, R; REITHMAIER, J. P et al.Electronics Letters. 2005, Vol 41, Num 20, pp 1125-1127, issn 0013-5194, 3 p.Article

Hybrid integrated external cavity laser using 1.5% ΔPLCTANAKA, T; OGAWA, I; HIBINO, Y et al.Electronics Letters. 2005, Vol 41, Num 2, pp 73-74, issn 0013-5194, 2 p.Article

Long-wavelength monolithic VCSEL arrays with high optical output powerORTSIEFER, M; BAYDAR, S; WINDHORN, K et al.Electronics Letters. 2005, Vol 41, Num 14, pp 807-808, issn 0013-5194, 2 p.Article

Modulation response of V-groove quantum-wire lasersGVOZDIC, Dejan M; SCHLACHETZKI, Andreas.IEEE journal of quantum electronics. 2005, Vol 41, Num 6, pp 842-847, issn 0018-9197, 6 p.Article

Performance improvement of 1.52μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substratesHUGUES, M; DAMILANO, B; BARJON, J et al.Electronics Letters. 2005, Vol 41, Num 10, pp 595-596, issn 0013-5194, 2 p.Article

Proton implanted singlemode holey vertical-cavity surface-emitting lasersLEISHER, P. O; DANNER, A. J; RAFTERY, J. J et al.Electronics Letters. 2005, Vol 41, Num 18, pp 1010-1011, issn 0013-5194, 2 p.Article

Pulsed operation of long-wavelength (λ ~ 11,3 μm) MOVPE-grown quantum cascade lasers up to 350 KMOREAU, V; KRYSA, A. B; BAHRIZ, M et al.Electronics Letters. 2005, Vol 41, Num 21, pp 1175-1176, issn 0013-5194, 2 p.Article

Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structuresKAISER, W; MATHWIG, K; DEUBERT, S et al.Electronics Letters. 2005, Vol 41, Num 14, pp 808-810, issn 0013-5194, 3 p.Article

Theory of spontaneous emission noise in multisection semiconductor lasersLOUDON, Rodney; RAMOO, Desi; ADAMS, Michael J et al.Journal of lightwave technology. 2005, Vol 23, Num 8, pp 2491-2504, issn 0733-8724, 14 p.Article

VCSEL tolerance to optical feedbackSUBRAHMANYAM, P. Bala; ZHOU, Y; CHROSTOWSKI, L et al.Electronics Letters. 2005, Vol 41, Num 21, pp 1178-1179, issn 0013-5194, 2 p.Article

Laser diode incorporating buried etched-void photonic patternGAZULA, D; QUADERY, S; DEPPE, D. G et al.Electronics Letters. 2005, Vol 41, Num 22, pp 1223-1225, issn 0013-5194, 3 p.Article

Statistical measures of the power dropout ratio in semiconductor lasers subject to optical feedbackYANHUA HONG; SHORE, K. Alan.Optics letters. 2005, Vol 30, Num 24, pp 3332-3334, issn 0146-9592, 3 p.Article

Modelling of the laser dynamics of electrically pumped organic semiconductor laser diodesPFLUMM, Christof; KARNUTSCH, Christian; BOSCHERT, René et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59370X.1-59370X.13, issn 0277-786X, isbn 0-8194-5942-9, 1VolConference Paper

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μmSALHI, A; ROUILLARD, Y; PERONA, A et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 260-262, issn 0268-1242, 3 p.Article

850nm vertical cavity surface emitting lasers fabricated by H+ inclined implantation using tungsten wire as maskGUOTONG DU; HAISONG WANG; JUNFENG SONG et al.SPIE proceedings series. 2004, pp 164-169, isbn 0-8194-5547-4, 6 p.Conference Paper

Quantum dot semiconductor lasers with optical feedbackHUYET, G; O'BRIEN, D; KOVSH, A. R et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 345-352, issn 0031-8965, 8 p.Conference Paper

Émission spontanée amplifiée (ESA) dans une structure à double cavité verticale (Bi-VCSEL) = Amplified spontaneous emission (ESA) in a double vertical cavity structure (Bi-VCSEL)BOUCHER, Y; GAYRAUD, L.Journal de physique. IV. 2004, Vol 119, pp 135-136, issn 1155-4339, 2 p.Conference Paper

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