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Pressure induced semiconducting to metallic transition in TeSINGH, D. B; VARANDANI, D; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1263-1266, isbn 0-8194-2756-X, 2VolConference Paper

Electronic structure and metallization of siliconBISWAS, R; KERTESZ, M.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 1791-1797, issn 0163-1829Article

Semi-conductor to metal transition in liquid selenium at high pressure and high temperatureSOLDO, Y; HAZEMANN, J. L; ABERDAM, D et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.983-C2.985, issn 1155-4339, 2Conference Paper

A first-principles pseudopotential model for the strong intrasite interaction applied to the 4f13 configuration (Yb2O3)LOPEZ-AGUILAR, F; COSTA-QUINTANA, J.Physica status solidi. B. Basic research. 1984, Vol 123, Num 1, pp 219-228, issn 0370-1972Article

The photoinduced Mott transition from metal to insulator: the problem of critical concentrationPERGAMENT, Alexander; KAZAKOVA, Elena; MORAK, Andreas et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 7, pp 1151-1156, issn 0953-8984, 6 p.Article

Transverse-field and defect-azimuth effects in achiral carbon nanotubesZHU, Jia-Lin; SONG, Hai-Feng; XIAO HU et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 29, pp 4629-4636, issn 0953-8984, 8 p.Article

Study of the metal-semiconductor transition in Rb2Mo6Se6,Rb2Mo6Te6 and Cs2Mo6Te6 under pressuresHOR, P. H; FAN, W. C; CHOU, L. S et al.Solid state communications. 1985, Vol 55, Num 3, pp 231-235, issn 0038-1098Article

Transformations électroniques dans des semiconducteurs presque magnétiquesVOLKOV, A. G; POVZNER, A. A; GEL'D, P. V et al.Fizika tverdogo tela. 1984, Vol 26, Num 6, pp 1675-1677, issn 0367-3294Article

Variation du caractère du contact CdSe-VO2 lors de la transition de phase métal-semiconducteurKUZNETSOV, V. A; LANSKAYA, T. G; MATASOVA, L. P et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 8, pp 1616-1618, issn 0044-4642Article

Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phaseBHATIA, K. L; PARTHASARATHY, G; GOSAIN, D. P et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1492-1494, issn 0163-1829Article

Dynamique sans collision de la transition semiconducteur-métal hors d'équilibreKOPAEV, YU. V; MENYAJLENKO, V. V; MOLOTKOV, S. N et al.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 4, pp 1404-1415, issn 0044-4510Article

Nanoscale study of conduction through carbon nanotube networksSTADERMANN, M; PAPADAKIS, S. J; WASHBURN, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201402.1-201402.3, issn 1098-0121Article

PHASE TRANSITION IN THE EXTENDED FALIEOV-KIMBALL MODEL WITH FINITE F-BANDWITHSHARMA HV; SINGH I.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 629-635; ABS. GER; BIBL. 15 REF.Article

A PHENOMENOLOGICAL MODEL FOR SEMICONDUCTOR-METAL TRANSITION IN MIXED CONDUCTORSRAMASESHA S.1982; JOURNAL OF SOLID STATE CHEMISTRY; ISSN 0022-4596; GBR; DA. 1982; VOL. 41; NO 3; PP. 333-337; BIBL. 7 REF.Article

Semiconductor-Metal transition in a quantum wellNITHIANANTHI, P; JAYAKUMAR, K.Physica. B, Condensed matter. 2007, Vol 391, Num 1, pp 113-117, issn 0921-4526, 5 p.Article

Verwey transition in magnetite at high pressure: A new quantum critical point at the onset of metallizationSPALEK, J; KOZLOWSKI, A; KAKOL, Z et al.Physica. B, Condensed matter. 2009, Vol 404, Num 19, pp 2894-2897, issn 0921-4526, 4 p.Conference Paper

FIRST-ORDER PHASE TRANSITIONS IN INTERMEDIATE-VALENCE SOLIDS: A THEORY BASED ON METALLIC HYDROGENLIN LIU YR; FALICOV LM; KOHN W et al.1981; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5664-5672; BIBL. 25 REF.Article

ELECTRONIC STRUCTURE OF SI FOR PRESSURE NEAR THE PHASE TRANSITIONBASHENOV VK; MARKOLENKO YK.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 97; NO 2; PP. K145-K148; BIBL. 14 REF.Article

TRANSITION METAL-SEMICONDUCTEUR DANS DES SEMICONDUCTEURS LIQUIDESALEKSEEV VA; ANDREEV AA; SADOVSKIJ MV et al.1980; USPEHI FIZ. NAUK; ISSN 0042-1294; SUN; DA. 1980; VOL. 132; NO 1; PP. 47-90; BIBL. 231 REF.Article

PHOTOLUMINESCENCE OBSERVATION OF DONOR PAIRS IN SILICONSHIRAKI Y; NAKASHIMA H.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 3; PP. 295-298; BIBL. 9 REF.Article

SEMICONDUCTOR-METAL TRANSITION BY RANDOMLY SHIFTED BANDS MODEL.BARANCOK D; BARTA S; DIESKA P et al.1978; ACTA PHYS. SLOV.; CSK; DA. 1978; VOL. 28; NO 2; PP. 152-157; BIBL. 16 REF.Article

THERMOCHROMIC DISPLAYS BASED ON METAL-SEMICONDUCTOR PHASE TRANSITION IN VANADIUM OXIDESOLEJNIK AS; ABALDUEV BV; ZAHARCHENYA BP et al.1977; INZHENER.-FIZ. ZH., BELORUS. S.S.R.; S.S.S.R.; DA. 1977; VOL. 33; NO 5; PP. 931-934; ABS. ANGL.; BIBL. 8 REF.Article

RAMAN SCATTERING OF TRIGONAL SE AND TE AT VERY HIGH PRESSUREAOKI K; SHIMOMURA O; MIMORA S et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 48; NO 3; PP. 906-911; BIBL. 21 REF.Article

PHENOMENES D'HYSTERESIS LORS DE LA TRANSITION DE PHASE METAL-SEMICONDUCTEUR DANS LES OXYDES DE VANADIUMLANSKAYA TG; MERKULOV IA; CHUDNOVSKIJ FA et al.1978; FIZ. TVERD. TELA; S.S.S.R.; DA. 1978; VOL. 20; NO 2; PP. 336-342; BIBL. 9 REF.Article

PARTICULARITES DU MECANISME DE LA TRANSFORMATION DE PHASE ISOMORPHE DANS LES COMPOSES A BASE DE SMSABDUKAMALOV BA; ATTEKAR IL; IVANOV VI et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 2; PP. 473-477; BIBL. 7 REF.Article

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