Pressure induced semiconducting to metallic transition in TeSINGH, D. B; VARANDANI, D; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1263-1266, isbn 0-8194-2756-X, 2VolConference Paper

Electronic structure and metallization of siliconBISWAS, R; KERTESZ, M.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 1791-1797, issn 0163-1829Article

Semi-conductor to metal transition in liquid selenium at high pressure and high temperatureSOLDO, Y; HAZEMANN, J. L; ABERDAM, D et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.983-C2.985, issn 1155-4339, 2Conference Paper

A first-principles pseudopotential model for the strong intrasite interaction applied to the 4f¹³ configuration (Yb₂O₃)LOPEZ-AGUILAR, F; COSTA-QUINTANA, J.Physica status solidi. B. Basic research. 1984, Vol 123, Num 1, pp 219-228, issn 0370-1972Article

Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phaseBHATIA, K. L; PARTHASARATHY, G; GOSAIN, D. P et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1492-1494, issn 0163-1829Article

Dynamique sans collision de la transition semiconducteur-métal hors d'équilibreKOPAEV, YU. V; MENYAJLENKO, V. V; MOLOTKOV, S. N et al.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 4, pp 1404-1415, issn 0044-4510Article

Nanoscale study of conduction through carbon nanotube networksSTADERMANN, M; PAPADAKIS, S. J; WASHBURN, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201402.1-201402.3, issn 1098-0121Article

PHASE TRANSITION IN THE EXTENDED FALIEOV-KIMBALL MODEL WITH FINITE F-BANDWITHSHARMA HV; SINGH I.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 629-635; ABS. GER; BIBL. 15 REF.Article

Semiconductor-Metal transition in a quantum wellNITHIANANTHI, P; JAYAKUMAR, K.Physica. B, Condensed matter. 2007, Vol 391, Num 1, pp 113-117, issn 0921-4526, 5 p.Article

FIRST-ORDER PHASE TRANSITIONS IN INTERMEDIATE-VALENCE SOLIDS: A THEORY BASED ON METALLIC HYDROGENLIN LIU YR; FALICOV LM; KOHN W et al.1981; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5664-5672; BIBL. 25 REF.Article

ELECTRONIC STRUCTURE OF SI FOR PRESSURE NEAR THE PHASE TRANSITIONBASHENOV VK; MARKOLENKO YK.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 97; NO 2; PP. K145-K148; BIBL. 14 REF.Article

TRANSITION METAL-SEMICONDUCTEUR DANS DES SEMICONDUCTEURS LIQUIDESALEKSEEV VA; ANDREEV AA; SADOVSKIJ MV et al.1980; USPEHI FIZ. NAUK; ISSN 0042-1294; SUN; DA. 1980; VOL. 132; NO 1; PP. 47-90; BIBL. 231 REF.Article

PHOTOLUMINESCENCE OBSERVATION OF DONOR PAIRS IN SILICONSHIRAKI Y; NAKASHIMA H.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 3; PP. 295-298; BIBL. 9 REF.Article

SEMICONDUCTOR-METAL TRANSITION BY RANDOMLY SHIFTED BANDS MODEL.BARANCOK D; BARTA S; DIESKA P et al.1978; ACTA PHYS. SLOV.; CSK; DA. 1978; VOL. 28; NO 2; PP. 152-157; BIBL. 16 REF.Article

THERMOCHROMIC DISPLAYS BASED ON METAL-SEMICONDUCTOR PHASE TRANSITION IN VANADIUM OXIDESOLEJNIK AS; ABALDUEV BV; ZAHARCHENYA BP et al.1977; INZHENER.-FIZ. ZH., BELORUS. S.S.R.; S.S.S.R.; DA. 1977; VOL. 33; NO 5; PP. 931-934; ABS. ANGL.; BIBL. 8 REF.Article

RAMAN SCATTERING OF TRIGONAL SE AND TE AT VERY HIGH PRESSUREAOKI K; SHIMOMURA O; MIMORA S et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 48; NO 3; PP. 906-911; BIBL. 21 REF.Article

PHENOMENES D'HYSTERESIS LORS DE LA TRANSITION DE PHASE METAL-SEMICONDUCTEUR DANS LES OXYDES DE VANADIUMLANSKAYA TG; MERKULOV IA; CHUDNOVSKIJ FA et al.1978; FIZ. TVERD. TELA; S.S.S.R.; DA. 1978; VOL. 20; NO 2; PP. 336-342; BIBL. 9 REF.Article

INSULATING GROUND STATE AND NONMETAL-METAL TRANSITIONSCHAKRAVERTY BK.1980; NATURE (LOND.); ISSN 0028-0836; GBR; DA. 1980; VOL. 287; NO 5781; PP. 393-396; BIBL. 21 REF.Article

THE METAL-SEMICONDUCTOR TRANSITION TEMPERATURES IN VANADIUM OXIDESFISHER B; GRUNZWEIG GENOSSAR J.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 9; PP. 965-967; BIBL. 11 REF.Article

SEMICONDUCTOR-METAL TRANSITION OF DIAMOND-TYPE CRYSTALSBASHENOV VK; MARKOLENKO YK; TIMOFEENKO VV et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 87; NO 2; PP. K73-K75; BIBL. 8 REF.Article

ABSORPTION DE LA LUMIERE DES "GOUTTES" DE LA PHASE METALLIQUE AU VOISINAGE DU POINT DE TRANSITION SEMICONDUCTEUR-METAL DANS VO₂GERBSHTEJN YU M; SMIRNOVA TV; CHUDNOVSKIJ FA et al.1977; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1977; VOL. 25; NO 10; PP. 474-476; BIBL. 3 REF.Article

Neutron diffraction studies on the liquid Te and As-Te mixturesMARUYAMA, Kenji; HOSHINO, Hideoki; IKEMOTO, Hiroyuki et al.Journal of the Physical Society of Japan. 2004, Vol 73, Num 2, pp 380-387, issn 0031-9015, 8 p.Article

BRUIT A BASSE FREQUENCE DANS LE DIOXYDE DE VANADIUM A LA TRANSITION DE PHASE METAL-SEMICONDUCTEURANDREEV VN; ZAKHARCHENYA BP; KAPSHIN YU S et al.1980; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1980; VOL. 79; NO 4; PP. 1353-1362; ABS. ENG; BIBL. 18 REF.Article

Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in the BiS₂-based superconductors LnO_0.5F_0.5BiS₂ (Ln = La, Ce, Pr, Nd)WOLOWIEC, C. T; WHITE, B. D; JEON, I et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 42, issn 0953-8984, 422201.1-422201.6Article

Investigation of fast processes in condensed matter by time-resolved x-ray diffraction : Ultra X-ray Science: Probing Transient Structures in Condensed MatterUSCHMANN, I; KAMPFER, T; ZAMPONI, F et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 1, pp 91-98, issn 0947-8396, 8 p.Article