Chaotic current noise in a two-valley semiconductor system of the Gunn instabilityNAKAMURA, K.Physics letters. A. 1988, Vol 134, Num 3, pp 173-178, issn 0375-9601Article

High-field electron transport for ellipsoidal multivalley band structure of siliconSAMUDRA, G; SOO JIN CHUA; GHATAK, A. K et al.Journal of applied physics. 1992, Vol 72, Num 10, pp 4700-4704, issn 0021-8979Article

Intervalley scattering and shallow-deep instabilities of electronic levels in semiconductorsRESCA, L; LOHRMANN, D. J; GRAFT, R. D et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 5, pp 2741-2746, issn 0163-1829Article

Influence des mouvements des populations d'électrons entre les vallées sur l'effet photomagnétoélectrique dans le siliciumSERDEGA, B. K; SHEKHOVTSOV, L. V.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 6, pp 1044-1046, issn 0015-3222Article

Effect of intervalley scattering of carriers on the longitudinal magnetoconductance in many-valley materialsKOZLOV, V. A; KORSHAK, A. N; MATHON, D et al.Soviet physics. Solid state. 1992, Vol 34, Num 3, pp 503-506, issn 0038-5654Article

Hot-electron transport for many-valley semiconductors by the method of nonequilibrium statistical operatorsLIU, M; XING, D. Y; TING, C. S et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 6, pp 2997-3007, issn 0163-1829Article

Spectres des donneurs peu profonds dans les semiconducteurs multivalléesBEJNIKHES, I. L; KOGAN, SH. M.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 44, Num 1, pp 39-42, issn 0370-274XArticle

Elastic scattering in many-valley semiconductors and its role in the relaxation of the energy of nonequilibrium electronsPRIMA, N. A.Soviet physics. Semiconductors. 1992, Vol 26, Num 3, pp 299-301, issn 0038-5700Article

Tension photomagnétoélectrique de Ge excité par une lumière polariséeZYKOV, V.G; SERDEGA, B.K.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1119-1120, issn 0015-3222Article

Hot-electron noise in two-valley semiconductors: an analytic modelSTANTON, C. J; WILKINS, J. W.Physical review. B, Condensed matter. 1987, Vol 36, Num 3, pp 1686-1695, issn 0163-1829Article

Excited states and the metal-insulator transition in monovalent systemsBHATT, R. N; SACHDEV, S.Physical review. B, Condensed matter. 1986, Vol 34, Num 5, pp 3520-3523, issn 0163-1829Article

Influence of donor-pairs on density of states of degenerate N-type semiconductorsDE BRITO MOTA, F; FERREIRA DA SILVA, A.Solid state communications. 1990, Vol 73, Num 4, pp 313-315, issn 0038-1098Article

On level splitting by intervalley interference effects in semiconductor quantum wellsIKONICÊ, Z; INKSON, J. C; SRIVASTAVA, G. P et al.Solid state communications. 1990, Vol 76, Num 2, pp 117-119, issn 0038-1098, 3 p.Article

Intervalley noise in a quantized inversion channel on a silicon surfaceMARGULIS, V. A.Physica. B, Condensed matter. 1996, Vol 217, Num 3-4, pp 252-260, issn 0921-4526Article

Ultrafast electronic Raman spectroscopy in semiconductorsSUEMOTO, T; TANAKA, K; OHTAKE, H et al.Progress in crystal growth and characterization of materials. 1996, Vol 33, Num 1-3, pp 57-63, issn 0960-8974Conference Paper

Extension of the Kronig-Penney model for Γ-X mixing in superlatticesERDOGAN, M. U; KIM, K. W; STROSCIO, M. A et al.Journal of applied physics. 1993, Vol 74, Num 7, pp 4777-4779, issn 0021-8979Article

Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopySAETA, P. N; FEDERECI, J. F; GREENE, B. I et al.Applied physics letters. 1992, Vol 60, Num 12, pp 1477-1479, issn 0003-6951Article

Electron-hole liquid in depoed many-valley semiconductorsANDRYUSHIN, E. A; SILIN, A. P.Soviet physics. Solid state. 1990, Vol 32, Num 10, pp 1746-1748, issn 0038-5654, 3 p.Article

Absorption optique par les porteurs libres dans les couches de semiconducteurs à plusieurs valléesGASHIMZADE, F. M; TAGIROV, EH. V.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 7, pp 1328-1330, issn 0015-3222Article

Valley mixing and interface fluctuations in GaAs/AlAs superlatticesANDO, T.Japanese journal of applied physics. 1995, Vol 34, Num 8B, pp 4522-4525, issn 0021-4922, 1Conference Paper

Magnetoplasma waves in many-valley narrow-gap IV-VI semiconductorsSIZOV, F. F; GROMOVOI, Y. S; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 12, pp 1299-1301, issn 0038-5700Article

A theory of nonequilibrium carrier transport in multivalley semiconductorsCHENG, M; KUNHARDT, E. E.Journal of applied physics. 1990, Vol 67, Num 4, pp 1907-1914, issn 0021-8979, 8 p.Article

Calculation of the auger lifetime of degenerate carriers in the many-valley narrow gap semiconductorsDMITRIEV, A. V.Solid state communications. 1990, Vol 74, Num 7, pp 577-581, issn 0038-1098, 5 p.Article

Diffusion inélastique entre vallées dans les semiconducteurs et temps de relaxation caractéristiques: dispersion de la conductivité relativement à la fréquence pour un échauffement faiblePRIMA, N. A; MOZDOR, E. V.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 1, pp 110-117, issn 0015-3222Article

On the effective mass in modeling nonstationary transportYE, L; STEWART, R. A; CHURCHILL, J. N et al.Journal of applied physics. 1987, Vol 61, Num 5, pp 2077-2079, issn 0021-8979Article