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Asymmetric drain underlap dopant-segregated Schottky barrier ultrathin-body SOI MOSFET for low-power mixed-signal circuitsPATIL, Ganesh C; QURESHI, S.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045002.1-045002.9Article

Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistorsKYUNGSOO JANG; JAYAPAL RAJA; JIWOONG KIM et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085015.1-085015.5Article

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow ratesTAYLOR, E; FANG, F; OEHLER, F et al.Semiconductor science and technology. 2013, Vol 28, Num 6, issn 0268-1242, 065011.1-065011.7Article

Contact angle of ethanol―water solutions on crystalline and mesoporous siliconSPENCER, S. J; ANDREWS, G. T; DEACON, C. G et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055011.1-055011.5Article

Design and fabrication of tunable laser with digital concatenated gratingJIANYI ZHAO; NING ZHOU; YICHAO TANG et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035001.1-035001.6Article

Enhanced optical performance of electrochemically etched porous silicon carbideNADERI, N; HASHIM, M. R; SARON, K. M. A et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025011.1-025011.7Article

Explanation of the photocurrent quantum efficiency (Φ) enhancements through the CAN's model equation for the p-Cul sensitized methylviolet-C18 LB films in the photoelectrochemical cells (PECs) and Cu/n-Cu2O/M-C18/p-CuI solid-state photovoltaic cellsFERNANDO, C. A. N; LIYANAARACHCHI, U. S; ARAJAPAKSHA, R. D. A et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045017.1-045017.9Article

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristorsLEVINSHTEIN, M. E; RUMYANTSEV, S. L; SHUR, M. S et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015008.1-015008.5Article

Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitorsGARCIA, H; CASTAN, H; PEREZ, E et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055005.1-055005.5Article

Integration of organic LEDs with inorganic LEDs for a hybrid lighting systemKONG, H. J; PARK, J. W; KIM, Y. M et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015011.1-015011.6Article

Lattice-matched InGaAs on InP thermophovoltaic cellsTULEY, R. S; ORR, J. M. S; NICHOLAS, R. J et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015013.1-015013.7Article

Low- and high-density InAs nanowires on Si(0 0 1) and their Raman imagingPAL, Suparna; SINGH, S. D; DIXIT, V. K et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015025.1-015025.10Article

Monolithic integrated SAW filter based on AlN for high-frequency applicationsKALETTA, Udo Ch; SANTOS, Paulo V; WOLANSKY, Dirk et al.Semiconductor science and technology. 2013, Vol 28, Num 6, issn 0268-1242, 065013.1-065013.7Article

Multi-frequency electron spin resonance analysis of interfacial Ge dangling bond defects in condensation-grown (100)Si/SiO2/Si1―xGex/SiO2STESMANS, A; SOMERS, P; AFANAS'EV, V. V et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015003.1-015003.4Article

Numerical study of metal oxide hetero-junction solar cells with defects and interface statesLE ZHU; GUOSHENG SHAO; LUO, J. K et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055004.1-055004.10Article

Study of band-structure, optical properties and native defects in AIBIIIO2 (AI = Cu or Ag, BIII = Al, Ga or In) delafossitesKUMAR, Mukesh; HANYUE ZHAO; PERSSON, Clas et al.Semiconductor science and technology. 2013, Vol 28, Num 6, issn 0268-1242, 065003.1-065003.10Article

Study of the junction and carrier lifetime properties of a spray-deposited CZTS thin-film solar cellPATEL, Malkeshkumar; MUKHOPADHYAY, Indrajit; RAY, Abhijit et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055001.1-055001.7Article

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacksATANASSOVA, E; STOJADINOVIC, N; SPASSOV, D et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055006.1-055006.9Article

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETsFEI TAN; XIA AN; SHOUBIN XUE et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055003.1-055003.5Article

Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductorsLIU, Z; PETERS, J. A; LI, H et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015022.1-015022.7Article

Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscopeKUNDHIKANJANA, W; YANG, Y; TANGA, Q et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025010.1-025010.5Article

Effect of anodization current density on pore geometry in macroporous siliconPECKHAM, J; ANDREWS, G. T.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105027.1-105027.5Article

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaNWU, L. L; ZHAO, D. G; ZHANG, B. S et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105020.1-105020.5Article

On the donor states in double InxGa1―xN/InyGa1―yN/GaN staggered quantum wellsYILDIRIM, Hasan; ASLAN, Bulent.Semiconductor science and technology. 2013, Vol 28, Num 11, issn 0268-1242, 115006.1-115006.5Article

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealingHAIFENG PU; QIANFEI ZHOU; LAN YUE et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105002.1-105002.5Article

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