kw.\*:("Semiconductor substrate")
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The influence of He addition on Cl-etching procedure for Si-nanoscale structure fabrication using reactive ion etching systemJUNG, M. Y; CHOI, S. S; KIM, J. W et al.Surface science. 2001, Vol 482-85, pp 1119-1124, issn 0039-6028, 2Conference Paper
Coplanar Schottky variable phase shifter constructed on GaAs substrate for millimeter-wave applicationFUKUOKA, Y; ITOH, T.International journal of infrared and millimeter waves. 1984, Vol 5, Num 6, pp 793-801, issn 0195-9271Article
The electric-field problem of an interdigital transducer in a multilayered structureVAN DEN BERG, P. M; GHIJSEN, W. J; VENEMA, A et al.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 2, pp 121-129, issn 0018-9480Article
Integrated optical spectrum analyser using planar technology on oxidised silicon substrateVALETTE, S; LIZET, J; MOTTIER, P et al.Electronics Letters. 1983, Vol 19, Num 21, pp 883-885, issn 0013-5194Article
A semiconducting Langmuir-Blodgett film of non-amphiphilic bis-tetrathiafulvalene derivativePARG, R. P; KILBURN, J. D; PETTY, M. C et al.Journal of material chemistry. 1995, Vol 5, Num 10, pp 1609-1615, issn 0959-9428Article
GaAs light-emitting diodes fabricated on Ge-coated Si substratesFLETCHER, R. M; WAGNER, D. K; BALLANTYNE, J. M et al.Applied physics letters. 1984, Vol 44, Num 10, pp 967-969, issn 0003-6951Article
METHODOLOGY OF ELLIPSOMETRIC MEASUREMENTS OF THE SI-SIO2 DOUBLE LAYER SYSTEM ON SILICON.KRUSZEWSKI J; GUTKOWSKI M.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 2; PP. 131-134; ABS. RUSSE; BIBL. 5 REF.Article
ENTWICKLUNGSRICHTUNGEN BEI GERAETEN ZUR MIKROSTRUKTURERZEUGUNG = TENDANCES DE L'EVOLUTION DES APPAREILS POUR LA FABRICATION DES MICROSTRUCTURESGOMMEL KW.1979; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1979; VOL. 28; NO 10; PP. 446-450Article
THE ANALYSIS OF ANODIC OXIDE FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE TRACER TECHNIQUES.VERPLANKE JC; TIJBURG RP.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 802-804; BIBL. 9 REF.Article
Comment on: Nm-sized metal particles on a semiconductor surface, Schottky model, etc. Author's replyIOANNIDES, Theophilos; ZHDANOV, Vladimir P.Surface science. 2003, Vol 530, Num 3, pp 216-220, issn 0039-6028, 5 p.Article
Nanopatterning of alkynes on hydrogen-terminated silicon surfaces by scanning probe-induced cathodic electrograftingHURLEY, Patrick T; RIBBE, Alexander E; BURIAK, Jillian M et al.Journal of the American Chemical Society. 2003, Vol 125, Num 37, pp 11334-11339, issn 0002-7863, 6 p.Article
DC and periodic reverse electroplating of semiconductor surfaces having adjacent p-type and n-type areasKARMALKAR, S; VENKATASUBRAMANIAN, N; OAK, Stimit et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp C429-C431, issn 0013-4651Article
HCl, H2, and Cl2 radical-beam ion-beam etching of AlxGa1-xAs substrates with varying Al mole fractionSKIDMORE, J. A; LISHAN, D. G; YOUNG, D. B et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2720-2724, issn 1071-1023Conference Paper
Low-loss antiresonant reflecting optical waveguide on Si substrate in visible-wavelength regionKOKUBUN, Y; BABA, T; SAKAKI, T et al.Electronics Letters. 1986, Vol 22, Num 17, pp 892-893, issn 0013-5194Article
Slow-wave coplanar waveguide on periodically doped semiconductor substrateFUKUOKA, Y; ITOH, T.IEEE transactions on microwave theory and techniques. 1983, Vol 31, Num 12, pp 1013-1017, issn 0018-9480Article
The effect of interactions between water and polishing pads on chemical mechanical polishing removal ratesCASTILLO-MEJIA, D; GOLD, S; BURROWS, V et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 2, pp G76-G82, issn 0013-4651Article
Bi nanoline passivity to attack by radical hydrogen or oxygenOWEN, J. H. G; BOWLER, D. R; MIKI, K et al.Surface science. 2002, Vol 499, Num 1, pp L124-L128, issn 0039-6028Article
Surface chemical processes in chemical mechanical polishing: Relationship between silica material removal rate and the point of zero charge of the abrasive materialOSSEO-ASARE, K.Journal of the Electrochemical Society. 2002, Vol 149, Num 12, pp G651-G655, issn 0013-4651Article
Control of the crystallite size and passivation of defects in porous silicon by a novel methodSHARMA, S. N; BANERJEE, Ratnabali; DAS, Debabrata et al.Applied surface science. 2001, Vol 182, Num 3-4, pp 333-337, issn 0169-4332Conference Paper
Desktop computer appraisal of potential slow-wave propagation characteristics fot Schottky coplanar linesSEGUINOT, C; KENNIS, P; PRIBETICH, P et al.Electronics Letters. 1983, Vol 19, Num 25-26, pp 1065-1066, issn 0013-5194Article
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating NiCHAO, C. W; YEWCHUNG SERMON WU; HU, Gau-Ren et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 9, pp C631-C634, issn 0013-4651Article
Dynamique de formation d'un écho électroacoustique dans une structure semiconductriceSEVERIN, F. M; SLAVUTSKIJ, L. A; TIMOFEEVA, G. YU et al.Akustičeskij žurnal. 1987, Vol 23, Num 1, pp 155-157, issn 0320-7919Article
Efficient ZnO-SiO2-Si Sezawa wave convolverMINAGAWA, S; OKAMOTO, T; NIITSUMA, T et al.IEEE transactions on sonics and ultrasonics. 1985, Vol 32, Num 5, pp 670-674, issn 0018-9537Article
Cutoff-taper performance of substrate-edge excited optoelectronic switchesPLATTE, W.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 2, pp 45-50, issn 0143-7100Article
Ag clusters on ultra-thin, ordered SiO2 filmsSANTRA, A. K; MIN, B. K; GOODMAN, D. W et al.Surface science. 2002, Vol 515, Num 1, pp L475-L479, issn 0039-6028Article