Characteristics and applications of silicon direct bonded interfacesMCCANN, P; DEVINE, C; RUDDELL, F et al.Proceedings - Electrochemical Society. 2003, pp 154-165, issn 0161-6374, isbn 1-56677-402-0, 12 p.Conference Paper

TE-TM mode conversion optical isolator fabricated by wafer bondingYOKOI, Hideki; MIZUMOTO, Tetsuya; IWASAKI, Hiroaki et al.Proceedings - Electrochemical Society. 2003, pp 130-136, issn 0161-6374, isbn 1-56677-402-0, 7 p.Conference Paper

Towards a microscopic understanding of plasma activated bondingPOULSEN, M; EGEBJERG, A; BUNK, O et al.Proceedings - Electrochemical Society. 2003, pp 248-258, issn 0161-6374, isbn 1-56677-402-0, 11 p.Conference Paper

Advanced SOI structures based on wafer bonding: A short reviewGHYSELEN, B.Proceedings - Electrochemical Society. 2003, pp 96-109, issn 0161-6374, isbn 1-56677-402-0, 14 p.Conference Paper

Bonding and contacting of MEMS-structures on wafer levelWIEMER, M; FRÖMEL, J; JIA, C et al.Proceedings - Electrochemical Society. 2003, pp 301-308, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Role of wafer bow and etch patterns in direct wafer bondingTURNERY, K. T; SPEARING, S. M.Proceedings - Electrochemical Society. 2003, pp 166-174, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

The bonding energy control: An original way to debondable substratesMORICEAU, H; RAYSSAC, O; ASPAR, B et al.Proceedings - Electrochemical Society. 2003, pp 49-56, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Characterization of bonded interface by HF etching methodSUNI, T; KIIHAMAKI, J; HENTTINEN, K et al.Proceedings - Electrochemical Society. 2003, pp 70-75, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Improved characterization methods for unipolar directly bonded semiconductor junctionsSTUCHINSKY, V. A; KAMAEV, G. N.Proceedings - Electrochemical Society. 2003, pp 203-211, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Hydrogen and helium implantation to achieve layer transferLAGAHE-BLANCHARD, C; SOUSBIE, N; SARTORI, S et al.Proceedings - Electrochemical Society. 2003, pp 346-358, issn 0161-6374, isbn 1-56677-402-0, 13 p.Conference Paper

Development of nanovoids at hydrophilic, hydrophobic and UHV bonded silicon interfacesREZNICEK, A; SCHOLZ, R; SENZ, S et al.Proceedings - Electrochemical Society. 2003, pp 221-232, issn 0161-6374, isbn 1-56677-402-0, 12 p.Conference Paper

Algainp light-emitting diodes with metal substrate fabricated by wafer bondingWEI CHIH PENG; YEWCHUNG SERMON WU.Proceedings - Electrochemical Society. 2003, pp 144-153, issn 0161-6374, isbn 1-56677-402-0, 10 p.Conference Paper

Triple-stack anodic bonding for MEMS applicationsDRAGOI, V; GLINSNER, T; HANGWEIER, P et al.Proceedings - Electrochemical Society. 2003, pp 329-336, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Pretreatment effects on void formation for low temperature Si-Si bonded wafersXUANXIONG ZHANG; RASKIN, Jean-Pierre.Proceedings - Electrochemical Society. 2003, pp 233-238, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection systemOGURA, Atsushl; OKABAYASHI, Osamu.Proceedings - Electrochemical Society. 2003, pp 19-24, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modellingMEMULLAN, A. J; O'MAHONEY, D; NEVIN, W. A et al.Proceedings - Electrochemical Society. 2003, pp 39-48, issn 0161-6374, isbn 1-56677-402-0, 10 p.Conference Paper

Manufacturing processes for WSi₂-GPSOI substrates and their influence on cross-talk suppression and inductanceBAINE, P; GAMBLE, H; ARMSTRONG, B. M et al.Proceedings - Electrochemical Society. 2003, pp 57-63, issn 0161-6374, isbn 1-56677-402-0, 7 p.Conference Paper

Ultra high precision of the tilt/twist misorientation angles in silicon/silicon direct wafer bondingFOURNEL, F; MORICEAU, H; LEROV, F et al.Proceedings - Electrochemical Society. 2003, pp 376-385, issn 0161-6374, isbn 1-56677-402-0, 10 p.Conference Paper

Wafer bonding using indium tin oxide intermediate layer for high brightness ledsPO CHUN LIU; CHIH YUAN HOU; YEWCHUNG SERMON WU et al.Proceedings - Electrochemical Society. 2003, pp 175-183, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Interfacial tunneling oxide: Impact on electrical characterization of unipolar Si/Si bonded junctionsSTUCHINSKY, V. A.Proceedings - Electrochemical Society. 2003, pp 195-202, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Interest of a short plasma treatment to achieve SI-SIO₂-SI bonded structuresMORICEAU, H; BATAILLOU, B; MORALES, C et al.Proceedings - Electrochemical Society. 2003, pp 110-117, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Silicon wafer bonding for encapsulating surface-micromechanical-systems using intermediate glass layersKNECHTEL, Roy; HELLER, Jutta; WIEMER, Mike et al.Proceedings - Electrochemical Society. 2003, pp 321-328, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Wafer-scale surface activated bonding of Cu-Cu, Cu-Si, and Cu-SiO₂ at low temperatureKIM, T. H; HOWLADER, M. M. R; ITOH, T et al.Proceedings - Electrochemical Society. 2003, pp 239-247, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Dielectric glue wafer bonding and bonded wafer thinning for wafer-level 3D integrationLU, J.-Q; KWON, Y; JINDAL, A et al.Proceedings - Electrochemical Society. 2003, pp 76-86, issn 0161-6374, isbn 1-56677-402-0, 11 p.Conference Paper