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Results 1 to 25 of 4424

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Circuit techniques for subthreshold leakage avoidance, control, and toleranceBORKAR, Shekhar.International Electron Devices Meeting. 2004, pp 421-424, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Threshold voltage for electrical tree inception in underground HV transmission cablesBAMJI, S. S; BULINSKI, A. T; CHEN, Y et al.IEEE transactions on electrical insulation. 1992, Vol 27, Num 2, pp 402-404, issn 0018-9367Article

Corona threshold voltage of negative DC surface dischargeSUGAWARA, N; HOKARI, K.Japanese journal of applied physics. 1983, Vol 22, Num 7, issn 0021-4922, 1225Article

A three-transistor threshold voltage model for halo processesRIOS, Rafael; SHIH, Wei-Kai; SHAH, Atul et al.IEDm : international electron devices meeting. 2002, pp 113-116, isbn 0-7803-7462-2, 4 p.Conference Paper

Understanding threshold voltage in undoped-body MOSFETs : An appraisal of various criteriaGARCIA SANCHEZ, F. J; ORTIZ-CONDE, A; MUCI, J et al.Microelectronics and reliability. 2006, Vol 46, Num 5-6, pp 731-742, issn 0026-2714, 12 p.Article

Power consumption in reversible logic addressed by a ramp voltageDE VOS, Alexis; VAN RENTERGEM, Yvan.Lecture notes in computer science. 2005, pp 207-216, issn 0302-9743, isbn 3-540-29013-3, 10 p.Conference Paper

A study of aluminum gate La2O3 nmisfet with Post Metallization AnnealNG, Jin-Aun; OHMI, Shun-Ichiro; TSUTSUI, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 369-380, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Conception of HEMTs threshold voltage based on the MOSFET modelOLMOS, A; REINA M., R; CHARRY R., E et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1109-1112, issn 0038-1101Article

Conditions for coalescence of multiple electric dischargesHARRY, J. E; YAHYA, A. A.IEE proceedings. A. Science, measurement and technology. 1992, Vol 139, Num 4, pp 210-212, issn 0960-7641Article

Improvement of field-effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski-grown GaAsYAMAZAKI, H; HONDA, T; ISHIDA, S et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1109-1111, issn 0003-6951Article

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

Nanofabrication with a scanning tunneling microscopeYAU, S.-T; SALTZ, D; WRIEKAT, A et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 2970-2974, issn 0021-8979Article

Thin-film electroluminescent devices with low operating voltage and high brightnessKOZAWAGUCHI, H; OHWAKI, J; TSUJIYAMA, B et al.Review of the electrical communication laboratories. 1984, Vol 32, Num 1, pp 71-77, issn 0029-067XArticle

Substrate effects on the threshold voltage of GaAs field-effect transistorsWINSTON, H. V; HUNTER, A. T; OLSEN, H. M et al.Applied physics letters. 1984, Vol 45, Num 4, pp 447-449, issn 0003-6951Article

Mechanism of EL2 effects on GaAs field-effect transistor threshold voltagesANHOLT, R; SIGMON, T. W.Journal of applied physics. 1987, Vol 62, Num 9, pp 3995-3997, issn 0021-8979Article

Shielding of backgating effects in GaAs integrated circuitsLEE, C. P; CHANG, M. F.IEEE electron device letters. 1985, Vol 6, Num 4, pp 169-171, issn 0741-3106Article

Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET'sPOOLE, D. R; KWONG, D. L.IEEE electron device letters. 1984, Vol 5, Num 11, pp 443-446, issn 0741-3106Article

INVESTIGATION OF PARAMETER SENSITIVITY OF SHORT CHANNEL MOSFETSSELBERHERR S; SCHUETZ A; POETZL H et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 85-90; BIBL. 7 REF.Article

SHORT-CHANNEL MOSFET VT-VDS CHARACTERISTICS MODEL BASED ON A POINT CHARGE AND ITS MIRROR IMAGESOHNO Y.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 211-216; BIBL. 11 REF.Article

A power-on-reset pulse generator referenced by threshold voltage without standby currentSONG, Choungki; KIM, Shiho.IEICE transactions on electronics. 2004, Vol 87, Num 9, pp 1646-1648, issn 0916-8524, 3 p.Article

A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltageTERADA, Kazuo; SUMIDA, Masaki.2002 international conference on microelectronic test structures. 2002, pp 61-66, isbn 0-7803-7464-9, 6 p.Conference Paper

Design of a SOI memory cellSTANOJEVIC, Z; IOANNOU, D. E; LONCAR, B et al.International conference on microelectronic. 1997, pp 297-300, isbn 0-7803-3664-X, 2VolConference Paper

Investigation of radiation sensitivity and post-irradiation thermal sensitivity of MOS transistorODALOVIC, M; VUCKOVIC, B; MANIC, I et al.International conference on microelectronic. 1997, pp 357-360, isbn 0-7803-3664-X, 2VolConference Paper

Transiently triggered latch-up in CMOS twin-tub and epitaxial technologiesPAVAN, P; CAPRARA, P; STUCCHI, M et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 273-278, issn 0748-8017Article

Extraction of MOSFET effective channel length and width based on the transconductance-to-current ratioCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 33-38, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

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