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Results 1 to 25 of 184

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Systematic study of shallow junction formation on germanium substratesHELLINGS, Geert; ROSSEEL, Erik; DE MEYER, Kristin et al.Microelectronic engineering. 2011, Vol 88, Num 4, pp 347-350, issn 0167-9317, 4 p.Conference Paper

On the modeling of transient diffusion and activation of boron during post-implantation annealingPICHLER, P; ORTIZ, C. J; COLOMBEAU, B et al.International Electron Devices Meeting. 2004, pp 967-970, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implantsGIUBERTONI, D; BERSANI, M; BAROZZI, M et al.Applied surface science. 2006, Vol 252, Num 19, pp 7214-7217, issn 0169-4332, 4 p.Conference Paper

Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions : Interstitial transport and F co-implant controlCOLOMBEAU, B; SMITH, A. J; PICHLER, P et al.International Electron Devices Meeting. 2004, pp 971-974, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

X-ray multiple diffraction on the shallow junction of B in Si(0 0 1)ORLOSKI, R. V; PUDENZI, M. A. A; HAYASHI, M. A et al.Journal of molecular catalysis. A, Chemical. 2005, Vol 228, Num 1-2, pp 177-182, issn 1381-1169, 6 p.Conference Paper

Formation of As enriched layer by steam oxidation of As+-implanted SiBAGHIZADEH, A; AGHA-ALIGOL, D; FATHY, D et al.Applied surface science. 2009, Vol 255, Num 11, pp 5857-5860, issn 0169-4332, 4 p.Article

Boron ultra low energy SIMS depth profiling improved by rotating stageBERSANI, M; GIUBERTONI, D; IACOB, E et al.Applied surface science. 2006, Vol 252, Num 19, pp 7315-7317, issn 0169-4332, 3 p.Conference Paper

Transient activation model for antimony in relaxed and strained siliconLAI, Y; BENNETT, N. S; AHN, C et al.Solid-state electronics. 2009, Vol 53, Num 11, pp 1173-1176, issn 0038-1101, 4 p.Article

Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantationKIM, Seong-Dong; PARK, Cheol-Min; WOO, Jason C. S et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 131-135, issn 0038-1101, 5 p.Article

Ionization and mass spectrometry of decaborane for shallow implantation of boron into siliconSOSNOWSKI, M; ALBANO, M. A; BABARAM, V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 11, pp 4329-4332, issn 0013-4651Article

Ultra shallow junction formation by flash annealing : The challenges aheadFOGGIATO, John; WOO SIK YOO.Proceedings - Electrochemical Society. 2005, pp 76-82, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper

Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of siliconSETSUHARA, Yuichi; HASHIDA, Masaki.Surface & coatings technology. 2010, Vol 205, Num 7, pp 1826-1829, issn 0257-8972, 4 p.Article

Laser doping for microelectronics and microtechnologySAMET, Thierry; KERRIEN, Gurwan; VENTURINI, Julien et al.Applied surface science. 2005, Vol 247, Num 1-4, pp 537-544, issn 0169-4332, 8 p.Conference Paper

C-V profiling of ultra-shallow junctions using step-like background profilesPOPADIC, Miloš; MILOVANOVIC, Vladimir; CUIQIN XU et al.Solid-state electronics. 2010, Vol 54, Num 9, pp 890-896, issn 0038-1101, 7 p.Conference Paper

A novel 50 nm vertical MOSFET with a dielectric pocketJAYANARAYANAN, S. K; DEY, S; DONNELLY, J. P et al.Solid-state electronics. 2006, Vol 50, Num 5, pp 897-900, issn 0038-1101, 4 p.Article

Low-temperature dopant activation technology using elevated Ge-S/D structureTAKEUCHI, Hideki; RANADE, Pushkar; KING, Tsu-Jae et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 73-76, issn 0169-4332, 4 p.Conference Paper

Application of extra-low impact energy SIMS and data reduction algorithm to USJ profilingKOUZMINOV, D; MERKULOV, A; AREVALO, E et al.Surface and interface analysis. 2013, Vol 45, Num 1, pp 345-347, issn 0142-2421, 3 p.Conference Paper

Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete pictureCHAN, T. K; KOH, S. Y; FANG, V et al.Applied surface science. 2014, Vol 314, pp 322-330, issn 0169-4332, 9 p.Article

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)VERVISCH, Vanessa; LARMANDE, Yannick; DELAPORTE, Philippe et al.Applied surface science. 2009, Vol 255, Num 10, pp 5647-5650, issn 0169-4332, 4 p.Conference Paper

Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealingNISHINOHARA, Kazumi T; ITO, Takayuki; SUGURO, Kyoichi et al.IEEE transactions on semiconductor manufacturing. 2004, Vol 17, Num 3, pp 286-291, issn 0894-6507, 6 p.Conference Paper

Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOSJING LIU; OZTURK, Mehmet C.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1535-1540, issn 0018-9383, 6 p.Article

Merits of heat assist for melt laser annealingSHIBAHARA, Kentaro; ETO, Takanori; KUROBE, Ken-Ichi et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 5, pp 1059-1064, issn 0018-9383, 6 p.Article

Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctionsABDELAOUI, M; IDRISSI-BENZOHRA, M; LAMINE, M et al.Microelectronics journal. 2003, Vol 34, Num 10, pp 955-959, issn 0959-8324, 5 p.Article

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealingGHETTI, A; BENVENUTI, A; MOLTENI, G et al.International Electron Devices Meeting. 2004, pp 983-986, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

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